STR4A60

SemiWell Semiconductor Bi-Directional Triode Thyristor Symbol STR4A60 Features ◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 4 A ) ◆ High Commutation dv/dt ○ 2.T2 ▼ ▲ ○ 3.Gate 1.T1 ○ General Description This device is new surface mounted package line up suitable for space limited application such as low power AC switching applications, such as fan speed, small light controllers and home appliance equipment. TO-126 3 2 1 Absolute Maximum Ratings Symbol VDRM IT(RMS) ITSM I2 t PGM PG(AV) IGM VGM TJ TSTG ( TJ = 25°C unless otherwise specified ) Condition Ratings 600 TC = 95 °C One Cycle, 50Hz/60Hz, Peak, Non-Repetitive 4.0 30/33 4.5 1.5 0.1 1 7.0 - 40 ~ 125 - 40 ~ 150 0.26 Parameter Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current I2 t Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Operating Junction Temperature Storage Temperature Mass Units V A A A2 s W W A V °C °C g Jun, 2003. Rev. 3 copyright@SemiWell Semiconductor Co., LTd., All rights reserved. 1/6 STR4A60 Electrical Characteristics Symbol Items Repetitive Peak Off-State Current Peak On-State Voltage Ⅰ Ⅱ Ⅲ Ⅰ Ⅱ Ⅲ Non-Trigger Gate Voltage Critical Rate of Rise Off-State Voltage at Commutation Holding Current Thermal Impedance Junction to case TJ = 125 °C, VD = 1/2 VDRM TJ = 125 °C, [di/dt]c = -2.0 A/ms, VD=2/3 VDRM Gate Trigger Voltage VD = 6 V, RL=10 Ω Gate Trigger Current VD = 6 V, RL=10 Ω Conditions VD = VDRM, Single Phase, Half Wave TJ = 125 °C IT = 6.0 A, Inst. Measurement Ratings Min. ─ ─ ─ ─ ─ ─ ─ ─ 0.2 5.0 ─ ─ Typ. ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ 5.0 ─ Max. 1.0 1.6 20 20 20 1.5 1.5 1.5 ─ ─ ─ 3.5 Unit IDRM VTM I+GT1 I -GT1 I -GT3 V+GT1 V-GT1 V-GT3 VGD (dv/dt)c IH Rth(j-c) mA V mA V V V/㎲ mA °C/W 2/6 STR4A60 Fig 1. Gate Characteristics 10 2 Fig 2. On-State Voltage 10 1 VGM (7V) On-State Current [A] PGM (1.5W) Gate Voltage [V] PG(AV) (0.1W) IGM (1A) 10 1 10 0 25 ℃ 125 C o 10 0 25 C o VGD (0.2V) 10 -1 10 1 10 2 10 3 10 -1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Gate Current [mA] On-State Voltage [V] Fig 3. On State Current vs. Maximum Power Dissipation 6.0 130 Fig 4. On State Current vs. Allowable Case Temperature Allowable Case Temperature [ oC] 5.5 5.0 π θ 360° θ 2π Power Dissipation [W] 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.5 θ θ θ θ = 180 o = 150 o = 120 o = 90 o o o 125 120 115 110 θ : Conduction Angle θ = 60 θ = 30 π θ θ 2π 105 100 95 0.0 360° θ θ θ θ θ θ = 30 o = 60 o = 90 o = 120 o = 150 o = 180 o θ : Conduction Angle 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 RMS On-State Current [A] RMS On-State Current [A] Fig 5. Surge On-State Current Rating ( Non-Repetitive ) 35 Fig 6. Gate Trigger Voltage vs. Junction Temperature 10 30 Surge On-State Current [A] 25 60Hz V VGT (25 C) VGT (t C) V 1 o + GT1 _ GT1 _ GT3 15 50Hz 10 5 o 20 V 0 0 10 10 1 10 2 0.1 -50 0 50 100 o 150 Time (cycles) Junction Temperature [ C] 3/6 STR4A60 Fig 7. Gate Trigger Current vs. Junction Temperature 10 10 Fig 8. Transient Thermal Impedance IGT (25 C) IGT (t C) I 1 + GT1 _ GT1 _ GT3 I I Transient Thermal Impedance [ C/W] o o o 1 0.1 -50 0 50 100 o 150 10 -2 10 -1 10 0 10 1 10 2 Junction Temperature [ C] Time (sec) Fig 9. Gate Trigger Characteristics Test Circuit 10Ω 10Ω 10Ω ▼ ▲ 6V ● ▼ ▲ A ● ▼ ▲ A ● 6V 6V A V ● RG V ● RG V ● RG Test Procedure Ⅰ Test Procedure Ⅱ Test Procedure Ⅲ 4/6 STR4A60 TO-126 Package Dimension Dim. A B C D E F G H I J K L mm Min. 7.5 10.8 14.2 2.7 3.8 2.5 1.2 2.3 4.6 0.48 0.7 1.4 3.2 0.62 0.86 0.019 0.028 1.5 0.047 Typ. Max. 7.9 11.2 14.7 2.9 Min. 0.295 0.425 0.559 0.106 Inch Typ. Max. 0.311 0.441 0.579 0.114 0.150 0.098 0.059 0.091 0.181 0.024 0.034 0.055 0.126 φ A E B D φ F 3 C 2 1 G L 1. Gate 2. T2 3. T1 J K H I 5/6 STR4A60 TO-126 Package Dimension, Forming Dim. A B C D E F G H I J K L M mm Min. 7.5 10.8 14.2 2.7 3.8 2.5 1.2 2.3 4.6 0.48 0.7 1.4 5.0 3.2 0.62 0.86 0.019 0.028 1.5 0.047 Typ. Max. 7.9 11.2 14.7 2.9 Min. 0.295 0.425 0.559 0.106 Inch Typ. Max. 0.311 0.441 0.579 0.114 0.150 0.098 0.059 0.091 0.181 0.024 0.034 0.055 0.197 0.126 φ A E B D φ F 3 C 2 1 M J H I G L 1. Gate 2. T2 3. T1 K 6/6