TN815R

Preliminary SemiWell Semiconductor TN815R Symbol 3. Gate ○ ○ Silicon Controlled Rectifiers ▼ 1 2 3 Features Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 8 A ) ◆ Low On-State Voltage (1.4V(Typ.)@ ITM) ◆ Non-isolated Type ◆ ○ 2. Anode 1. Cathode D-PAK General Description 2 Standard gate triggering SCR is suitable for the application where requiring high bidirectional blocking voltage capability and also suitable for over voltage protection ,motor control circuit in power tool, inrush current limit circuit and heating control system. Absolute Maximum Ratings Symbol VDRM IT(AV) IT(RMS) ITSM I2 t di/dt PGM PG(AV) IFGM VRGM TJ TSTG ( TJ = 25°C unless otherwise specified ) Condition Ratings 600 Half Sine Wave : TC = 109 °C 180° Conduction Angle 1/2 Cycle, 60Hz, Sine Wave Non-Repetitive t = 8.3ms 5 8 73 26.6 50 5 1 2 5.0 - 40 ~ 125 - 40 ~ 150 Parameter Repetitive Peak Off-State Voltage Average On-State Current R.M.S On-State Current Surge On-State Current I2t for Fusing Critical rate of rise of on-state current Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation Forward Peak Gate Current Reverse Peak Gate Voltage Operating Junction Temperature Storage Temperature Units V A A A A2 s A/㎲ W W A V °C °C Apr, 2004. Rev.0 1/5 Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved. TN815R Electrical Characteristics Symbol Items VAK = VDRM TC = 25 °C TC = 125 °C ITM = 16 A VAK = 6 V(DC), RL=10 Ω IGT Gate Trigger Current (2) TC = 25 °C ─ ─ 15 mA tp=380㎲ ─ ─ ─ ─ ─ ─ 10 200 1.6 ( TC = 25 °C unless otherwise noted ) Conditions Ratings Min. Typ. Max. Unit IDRM Repetitive Peak Off-State Current Peak On-State Voltage (1) ㎂ VTM V VD = 6 V(DC), RL=10 Ω VGT Gate Trigger Voltage (2) TC = 25 °C ─ ─ 1.5 V VGD dv/dt Non-Trigger Gate Voltage (1) Critical Rate of Rise Off-State Voltage VAK = 12 V, RL=100 Ω TC = 125 °C 0.2 200 ─ ─ ─ ─ V Linear slope up to VD = VDRM 67% , Gate open TJ = 125°C IT = 100mA, Gate Open V/㎲ IH Holding Current TC = 25 °C ─ ─ 20 mA Rth(j-c) Rth(j-a) Thermal Impedance Thermal Impedance Junction to case Junction to Ambient ─ ─ ─ ─ 2.0 70 °C/W °C/W ※ Notes : 1. Pulse Width = 1.0 ms , Duty cycle ≤ 1% 2. RGK Current not Included in measurement. 2/5 TN815R Fig 1. Gate Characteristics Fig 2. Maximum Case Temperature 160 10 1 PGM(5W) Max. Allowable Case Temperature [ C] VGM(5V) o 140 Gate Voltage [V] 120 θ = 180 o PG(AV)(1W) IGM(2A) 10 0 100 25 C o π 80 2π θ 360° 60 VGD(0.2V) 10 -1 θ : Conduction Angl e 40 0 1 2 3 4 5 6 10 -1 10 0 10 1 10 2 10 3 Gate Current [mA] Average On-State Current [A] Fi g 3. Typi cal Forward Voltage 10 2 Fi g 4. Th ermal R esponse 10 Transient Thermal Impedance [ C/W] On-State Current [A] o 1 10 1 125 C o 0.1 25 C o 10 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.01 -4 10 10 -3 10 -2 10 -1 10 0 10 1 10 2 On-State Voltage [V] Time (sec) Fig 5. Typical Gate Trigger Voltage vs. Junction Temperature 10 10 Fi g 6. Typi cal Gate Tri gger Current vs. Junction Temperature VGT(25oC) IGT(25 C) VGT(t C) IGT(t C) o o 1 1 o 0.1 -50 0 50 100 o 150 0.1 -50 0 50 100 o 150 Junction Temperature[ C] Junction Temperature[ C] 3/5 TN815R Fi g 7. Typi cal Ho ldi ng C urrent 10 9 θ = 180 o Fig 8. Power Dissipation Max. Average Power Dissipation [W] 8 θ = 120 7 6 θ = 60 5 θ = 30 4 3 2 1 0 o o o θ = 90 o IH(25oC) IH(t C) o 1 0.1 -50 0 50 100 o 150 0 1 2 3 4 5 6 Junction Temperature[ C] Average On-State Current [A] 4/5 TN815R TO-252(D-PAK) Package Dimension mm Min. 6.48 5.0 7.42 2.184 0.762 1.016 Typ. 6.604 5.08 7.8 2.286 0.813 1.067 2.286 2.286 0.534 1.016 0.61 1.067 0.508 0.762 1.57 0.686 1.118 0.021 0.04 Max. 6.73 5.21 8.18 2.388 0.864 1.118 Min. 0.255 0.197 0.292 0.086 0.03 0.04 Inch Typ. 0.26 0.2 0.307 0.09 0.032 0.042 0.09 0.09 0.024 0.042 0.02 0.03 0.06 0.027 0.044 Max. 0.265 0.205 0.322 0.094 0.034 0.044 Dim. A B C D E F G H I J K L φ A B D E φ C I 2 1 G 3 H J F K L 1. Cathode 2. Anode 3. Gate 5/5