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SC1104XISTR

SC1104XISTR

  • 厂商:

    SEMTECH

  • 封装:

  • 描述:

    SC1104XISTR - Simple, Synchronous Voltage Mode PWM Controller - Semtech Corporation

  • 数据手册
  • 价格&库存
SC1104XISTR 数据手册
Simple, Synchronous Voltage Mode PWM Controller POWER MANAGEMENT Description The SC1104A/B is a versatile voltage-mode PWM controller designed for use in single ended DC/DC power supply applications. A simple, fixed frequency high efficiency buck regulator can be implemented using the SC1104A/B with a minimum of external components. Internal level shift and drive circuitry eliminates the need for an expensive P-channel, high-side switch. The small device footprint allows for compact circuit design. SC1104A/B features include temperature compensated voltage reference, triangle wave oscillator, current limit comparator and an externally compensated error amplifier. Current limit is implemented by sensing the voltage drop across the top FET’s RDS(ON). The SC1104 operates at fixed frequencies of 300kHz(A) or 600kHz(B) providing an optimum compromise between efficiency, external component size, and cost. 600kHz switching frequency is reserved for the SC1104B, +5VCC operation only. SC1104A/B has a thermal protection circuit, which is activated if the junction temperature exceeds 150°C. SC1104A/B Features Up to +14V input, 300kHz operation (SC1104A) Up to +7V input, 600kHz operation (SC1104B) High efficiency (>90%) 1% Reference voltage accuracy Hiccup mode over current protection Robust output drive RDS(ON) Current sensing Industrial temperature range 8-Lead SOIC package. Pb-free package available, fully WEEE and RoHS compliant Applications Termination supplies Low cost microprocessor supplies Peripheral card supplies Industrial power supplies High density DC/DC conversion Typical Application Circuit Typical Distributed Power Supply + C1 510-1500pF U1 SC1104A/B 1 COMP/SS SENSE 8 C3 1 D1 MBRA130L R4 2.32k R3 1.00k R5 200-1k C8 0.1-0.33 C4 10.0 C5 47/16V C6 47/16V C7 47/16V Vin 5 to 12V _ R1 200-2k C2 0.01 2 GND VCC 7 3 DL PHASE 6 4 DH BST 5 R8 opt Q1 Si4884DY C9 0.1 L1 1.5-6.8uH + D2 (opt) C10 220/4V C11 220/4V C12 220/4V C13 220/4V C14-17 1.0 R6 1-5.1 R7 1-5.1 Q2 Si4874DY 3.3V _ Figure 1 Revision: November 22, 2006 1 www.semtech.com SC1104A/B POWER MANAGEMENT Absolute Maximum Ratings Exceeding the specifications below may result in permanent damage to the device, or device malfunction. Operation outside of the parameters specified in the Electrical Characteristics section is not implied. Exposure to Absolute Maximum rated conditions for extended periods of time may affect device reliability. Parameter VCC to GND BST to PHASE PHASE to GND COMP/SS to GND SENSE to GND Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Operating Junction Temperature Range Operating Ambient Temperature Range Storage Temperature Range Lead Temperature (Soldering) 10 Sec. ESD Rating (Human Body Model) Symbol Maximum +20 +20 -0.5 to +20 +7 +7 Units V V V V V °C/W °C/W °C °C °C °C kV θJC θJ A TJ TA TSTG TLead V ESD 40 160 -40 to +125 -40 to +85 -65 to +150 300 2 Electrical Characteristics Unless specified: A: VCC = 12 ± 0.6V, VBST = 23 ± 1V, VOUT = 3.3V, TJ = TA = 25oC. B: VCC = 5 ± 0.25V, VBST = 12 ± 0.6V, VOUT = 2.0V, TJ = TA = 25oC Parameter Pow er Supply Supply Voltage Symbol Conditions Min Typ Max Units VCC V CC FSW = 300kHz (nom.), SC1104A FSW = 600kHz (nom.), SC1104B VCOMP ≤ 0.4V 4.5 4.5 11 14 7 14 V Supply Current Error Amplifier E/A Transconductance(1) Open Loop DC Gain(1) Bandwidth - 3dB(1) Input Bias Current Output Sink Current Source Current Oscillator Switching Frequency ICC mA gm AO FBW IFB ISIK ISC VSENSE ≥ 1.1V; VCOMP = 1.5V VSENSE ≥ 0.9V; VCOMP = 1.5V 0.65 0.95 12 42 400 1 0.7 1.1 3 mS dB kHz µA mA FOSC VCC = 12V ± 0.6V VCC = 5V ± 0.25V 255 510 300 600 345 690 kHz © 2006 Semtech Corp. 2 www.semtech.com SC1104A/B POWER MANAGEMENT Electrical Characteristics Unless specified: A: VCC = 12 ± 0.6V, VBST = 23 ± 1V, VOUT = 3.3V, TJ = TA = 25oC. B: VCC = 5 ± 0.25V, VBST = 12 ± 0.6V, VOUT = 2.0V, TJ = TA = 25oC Parameter Ramp Peak Voltage(1) Ramp Valley Voltage(1) Maximum Duty Cycle(2) Symbol VP-K VV dcMAX Conditions 4.75V ≤ VCC ≤ 12.6V 4.75V ≤ VCC ≤ 12.6V VCC = 12V (300kHz, SC1104A) VCC = 5V (600kHz, SC1104B) Min Typ 2.0 1.0 Max Units V V % 90 85 95 90 MOSFET Drivers DH Sink/Source Current SC1104A DL Sink/Source Current SC1104A DH Sink/Source Current SC1104B DL Sink/Source Current SC1104B DH Rise/Fall Time DL Rise/Fall Time Dead Time DH Minimum Off Time Reference Section Reference Voltage Temp Variance VREF ∆VREF 4.75V ≤ Vcc ≤ 12.6V 0 < TJ < +70°C -40 < TJ < +85°C Long Term Stability Current Limit Trip Voltage Soft-Start/Enable SS Source Current SS Sink Current Enable Input Threshold Enable Input Current VCOMP = 0.8V ISRC ISNK VCOMP < 2.5V VCOMP > 0.5V 0.5 0.5 1.00 1.8 1.8 1.35 2 µA µA V mA VTRIP 4.75V < Vcc < 12.6V Vtrp = Vcc - VPHASE 180 200 220 mV TJ = 125°C, 1000 hrs. 0.990 -1 -1.5 1.000 1.010 1 1.5 5 mV V % IDH IDL IDH IDL tr, tf tr, tf tdt tOFF d.c. < 2%, tPW < 100µs VGS = 4.5V (src) VGS = 2.5V (snk) d.c. < 2%, tPW < 100µs VGS = 4.5V (src) VGS = 2.5V (snk) CL = 3000pF, See Fig. 2 CL = 4000pF, See Fig. 2 S ee F i g. 2 4.75V ≤ Vcc ≤ 12.6V 0.6 0.6 0.45 0.45 0.8 0.7 0.6 0.6 50 50 80 160 ns ns A A © 2006 Semtech Corp. 3 www.semtech.com SC1104A/B POWER MANAGEMENT Electrical Characteristics Unless specified: A: VCC = 12 ± 0.6V, VBST = 23 ± 1V, VOUT = 3.3V, TJ = TA = 25oC. B: VCC = 5 ± 0.25V, VBST = 12 ± 0.6V, VOUT = 2.0V, TJ = TA = 25oC Parameter Under Voltage Lockout UVLO Threshold Thermal Shutdow n Over Temperature Trip Point(2) Symbol Conditions Min Typ Max Units Vth -40 < TJ < 85°C 3.9 4.15 4.5 V TOTP 140 160 °C Notes: (1) Guaranteed by design. (2) Not tested, by characterization. Figure 2 Block Diagram Figure 3 © 2006 Semtech Corp. 4 www.semtech.com SC1104A/B POWER MANAGEMENT Pin Configuration Top View Ordering Information Device (2) P ackag e SOIC-8 Temp Range (TJ) -40° to 125°C SC1104XISTR (1) SC1104XISTRT (1)(3) SC1104XEVB Evaluation Board (8-Pin SOIC) Pin Descriptions Pin # 1 2 3 4 5 6 7 8 Pin Name COMP/SS GND DL DH BST PHASE VC C SENSE Notes: (1) In place of “X”: A = 300kHz, VCC = 5V to 12V. B = 600kHz, VCC = 5V. (2) Only available in tape and reel packaging. A reel contains 2500 devices. (3) Lead free product. This product is fully WEEE and RoHS compliant. Pin Function Error amplifier output. Compensation, soft start/enable. Ground. Low side driver output High side driver output Bootstrap, high side driver. Input from the phase node between the MOSFETs. Chip bias supply voltage. Output voltage sense input. Marking Information yyww = Date Code (Example: 0012) xxxxxxxx = Semtech Lot No. (Example: E90101-1) © 2006 Semtech Corp. 5 www.semtech.com SC1104A/B POWER MANAGEMENT Theory of Operation Synchronous Buck Converter The output voltage of the synchronous converter is set and controlled by the output of the error amplifier. The inverting input of the error amplifier receives its voltage from the SENSE pin. The non-inverting input of the error amplifier is connected to an internal 1V reference. The error amplifier output is connected to the COMPensation pin. The error amplifier generates a current proportional to (Vsense – 1V), which is the COMP pin output current (Transconductance ~ 12mS). The voltage on the COMP pin is the integral of the error amplifier current. The COMP voltage is the non-inverting input to the PWM comparator and controls the duty cycle of the MOSFET drivers. The size of capacitor Ccomp controls the stability and transient response of the regulator. The larger the capacitor, the slower the COMP voltage changes, and the slower the duty cycle changes. The inverting input voltage of the PWM comparator is the triangular output of the oscillator. When the oscillator output voltage drops below the COMP voltage, the comparator output goes high. This pulls DL low, turning off the low-side FET. After a short delay (“dead time”), DH is pulled high, turning on the high-side FET. When the oscillator voltage rises back above the error amplifier output voltage, the comparator output goes low. This pulls DH low, turning off the high-side FET, and after a dead time delay, DL is pulled high, turning on the lowside FET. The dead time delay is determined by a monostable on the chip. The triangle wave minimum is about 1V, and the maximum is about 2V. Thus, if Vcomp = 0.9V, high side duty cycle is the minimum (~0%) , but if Vcomp is 2.0V, duty cycle is at maximum ( ~90%).The internal oscillator uses an on-chip capacitor and trimmed precision current sources to set the oscillation frequency to 300kHz (SC1104A) or 600kHz (SC1104B). Figure 1 shows a 3.3V output converter. If the Vout 3.3V, the error amplifier will sink current and reduce the COMP voltage, so that duty cycle will decrease. The circuit will be in steady state when Vout =3.3V , Vsense = 1V, Icomp = 0 . The COMP voltage and duty cycle depend on Vin. Under Voltage Lockout The under voltage lockout circuit of the SC1104A/B assures that both high-side and low-side MOSFET driver outputs remain in the off state whenever the supply voltage drops below set parameters. Lockout occurs if VCC falls below 4.2V typ. RDS(ON) Current Limiting In case of a short circuit or overload, the high-side (HS) FET will conduct large currents. To prevent damage, in this situation, large currents will generate a fault condition and begin a soft start cycle. While the HS driver is on, the phase voltage is compared to the Vcc pin voltage. If the phase voltage is 200mV lower than Vcc, a fault is latched and the soft start cycle begins. The voltages are compared during the middle of the HS pulse, to prevent transients from affecting the accuracy. The sampling of the voltage across the top FET occurs after a time delay tDELAY = 100ns_typ from the time the DH is pulled high. This delay prevents the measurement to be effected by ringing on the leading edge of the phase node pulse. The duration of the sampling is tSAMPLE = 100ns_typ. It is being disabled at very low duty cycle when tON < 300ns_typ. This feature allows for the orderly startup during the inrush of the current charging output capacitor and the fault free operation with extremely high input/output voltage ratio, e.g., VIN = 12V and VOUT = 1V. The over-current comparator (OC) is only active if the phase node is > 3.3V. This means that in the case of power source being < 3V the OC will be disabled even though the rest of the circuitry is completely functional. SC1104 still can be used for stepping down, e.g. 2.8V to 2.5V, 2V, 1.8V, etc. © 2006 Semtech Corp. 6 www.semtech.com SC1104A/B POWER MANAGEMENT Theory of Operation (Cont.) When choosing OC trip point one should consider the Tempco of the MOSFETs Rds_on and SC1104’s Vtrip. Also, any ringing on the Vcc and Phase nodes due to parasitic L and C will have some effect on the OC Vtrip. Example: Iout_nom = 6A; assume I_max = 125% • Iout_nom = 7.5A Rds_on = 0.014 Ω ; assume Rds_on_max ≈ 150% • Rds_on = 0.02Ω Voc = 7.5A • 0.02Ω = 150mV. This proves that MOSFETs with RDS_ON = 0.014Ω @ 25°C is the right choice. Soft Start The soft start (or hiccup) circuitry is activated when a fault occurs. Faults occur for three reasons: 1) Under voltage (VCC < 4.2V) 2) Over temperature (die temperature > 150°C) 3) Over current in high side FET. All faults are handled the same way. Both DH and DL are forced low. The error amplifier is turned off, but a 2µA current flows into the comp pin (soft start current). The sink current reduces the Comp voltage down to 0.6V over a period of a few milliseconds. When Vcomp ~ 0.6V, the fault is cleared and the DL goes high. Also, the soft start current changes polarity and begins to increase the voltage on the Comp capacitor. The DH remains low, because Vcomp is less than the lowest excursion of the oscillator ramp (1.0V). After a few ms, the Vcomp increases to about 1.0V and the DH will start to switch. The duty cycle will gradually increase, and Vsns will increase. When Vsns ~ 1.00V, the error amplifier turns on again. The circuit has now reached its operating point. If a fault occurs during the soft start, the cycle will begin again (drivers low, Vcomp decreasing down to 0.6V). CC RC Cp Closing the Loop In order to have a stable closed loop system with optimum transient response one should make sure that open-loop frequency response has an adequate Gain & Phase margins. The Bode plot of log. Gain vs Freq. and Phase vs Freq. provide the necessary means for the circuit evaluation. Loop stability defined by compensation networks around transconductance error amplifier (EA) and output divider, see below and output capacitor Cout and inductor Lout. Vout Cn Ra Rn EA _ Gm + Vref Rb Typical transconductance error amplifier The inductor and output capacitor form a “double pole” at the frequency: fLC = 1 2 • ∏ • Lo • Co The ESR of the output capacitor and the output capacitor value create a “zero” at the frequency. fESR = 1 2 • ∏ • ESR • Co The “zero” and “pole” from the EA compensation network are: fZ = 1 2 • ∏ • Rc • Cc fP = 1 2 • ∏ • Rc • Cp The additional “lead” network RA, CN, RN can be used to improve phase margin in case when output capacitors with extra-low ESR are used and there is a need to compensate for “high quality” output Lo, Co filter. © 2006 Semtech Corp. 7 www.semtech.com SC1104A/B POWER MANAGEMENT Theory of Operation (Cont.) fNET = 1 2 • ∏ • Ra • Cn Value for the resistor RN should be 1/10 of the output divider upper resistor RA. Example. Switching frequency fSW = 300kHz Output capacitance COUT = 3 x 330µF Output capacitor ESR = 45mΩ/each attenuation due to the LO, CO filter and the output resistor divider RA, RB is compensated by the gain of the PWM modulator and the gain of the transconductance error amplifier (GmEA • ZCOMP). Shown below is a typical Bode plot of the open-loop frequency response of SC1104 based buck converter. Output inductance LOUT = 4.7µH Input voltage VIN = 12V Output voltage VOUT = 3.3V Let’s choose crossover frequency fCO = 1/20 • fSW = 15kHz The compensation values used in this example are based on the following criteria: fZ = fLC; fNET = 1/10 • fLC; fP = 10 • fCO = 150kHz Therefore, fLC = 1 = 2.33kHz 2 • ∏ • 4.7µH • 990µF 1 = 10 .72kHz 2 • ∏ • 0.015 • 990µF 80.0 -50.0 40.0 -150 Plot1 vdberr in db(volts) 0 vpherr in degrees -250 -40.0 -350 2 1 -80.0 -450 1 1 vdberr 10 2 vpherr 100 1k frequency in hertz 10k 100k 1Meg fESR = Since, the EA can sink/source about 1mA, let’s choose Rc = 680Ω, then C C = 1 = 0.1µF 2 • ∏ • Fz • Rc CP = 1 = 1500pF 2 • ∏ • Fp • Rc Assuming the output divider lower resistor RB = 1k, then for VOUT = 3.3V the RA = 2.32k. CN = 1 = 0.3µF 2 • ∏ • fNET • Ra At the closed-loop crossover frequency fCO, the © 2006 Semtech Corp. 8 www.semtech.com SC1104A/B POWER MANAGEMENT Typical Characteristics Reference Voltage vs. Temp 0.5% 0.4% 0.3% 0.2% 0.1% 0.0% -0.1% -0.2% -0.3% -0.4% -0.5% -0.6% -0.7% -0.8% -0.9% -1.0% -40 -20 0 20 40 Temp, °C 60 80 100 120 Freq, % Vref, % 25% 20% 15% 10% 5% 0% -5% -10% -15% -20% -25% -40 -20 0 20 40 Temp, °C 60 80 100 120 Switching Frequency vs. Temp Trip Voltage vs. Temp 25% 20% 15% 10% UVLO, % Vtrip, % 5% 0% -5% -10% -15% -20% -25% -40 -20 0 20 40 Temp, °C 60 80 100 120 10% 8% 6% 4% 2% 0% -2% -4% -6% -8% -10% -40 Under Voltage Lockout vs. Temp -20 0 20 40 Temp, °C 60 80 100 120 © 2006 Semtech Corp. 9 www.semtech.com SC1104A/B POWER MANAGEMENT Evaluation Board Schematic - VIN = 5V 0 + C3 1.0 C1 1500p U1 C2 0.1 SC1104AISTR R1 1k R8 1.50k C7 10.0 D1 MBRA130L C8 47/6.3V C9 47/6.3V C10 47/6.3V Vin=5V _ 1 COMP/SS SENSE 8 D2 MBRA130L(opt) 2 GND VCC 7 R7 1.0k R9 150 C11 0.47 3 DL PHASE 6 4 DH BST 5 C4 0.1 R3 1 R4 2.2 Q1 Si4410DY R5 0 L1 3.9uH + C5 6800p R6 2.2 Q2 Si4410DY C15 330/4V C16 330/4V C17 330/4V C18 10 Vout=2.5@6A _ Evaluation Board Schematic - VIN = 12V 0 + C3 1.0 C1 1500p U1 C2 0.1 SC1104AISTR R1 680 R8 2.32k D1 LL4148 C7 10.0 C8 33/16V C9 33/16V C10 33/16V Vin=12V _ 1 COMP/SS SENSE 8 D2 MBRA130L(opt) 2 GND VCC 7 R7 1.0k R9 220 C11 0.33 3 DL PHASE 6 4 DH BST 5 C4 0.1 R3 2.2 R4 2.2 Q1 Si4410DY R5 5.1opt L1 4.7uH + C5 3300p R6 3.3 Q2 Si4410DY C15 330/4V C16 330/4V C17 330/4V C18 10 Vout=3.3@6A _ © 2006 Semtech Corp. 10 www.semtech.com SC1104A/B POWER MANAGEMENT Evaluation PC Board Top View Top Layer Bottom Layer © 2006 Semtech Corp. 11 www.semtech.com SC1104A/B POWER MANAGEMENT Typical Characteristics 100% 95% 90% Efficiency 85% 80% 75% 70% 65% 60% 0 2 4 6 Current, A 1.0% 0.8% 0.6% 0.4% 0.2% 0.0% -0.2% -0.4% -0.6% -0.8% -1.0% 0 2 4 6 Current, A 8 10 12 8 10 12 12V = Vin 3.3V = Vout 12A = Iout Regulation © 2006 Semtech Corp. 12 www.semtech.com SC1104A/B POWER MANAGEMENT Typical Characteristics (Cont.) 100% 95% 90% Efficiency 85% 80% 75% 70% 65% 60% 0 2 4 6 Current, A 8 10 12 5V = Vin 2V = Vout 12A = Iout 1.0% 0.8% 0.6% 0.4% 0.2% 0.0% -0.2% -0.4% -0.6% -0.8% -1.0% 0 2 4 6 Current, A 8 10 12 Regulation © 2006 Semtech Corp. 13 www.semtech.com SC1104A/B POWER MANAGEMENT Outline Drawing - SOIC - 8 A N 2X E/2 E1 E 1 ccc C 2X N/2 TIPS 2 e/2 B D aaa C SEATING PLANE A2 A C bxN bbb A1 C A-B D GAGE PLANE 0.25 SEE DETAIL SIDE VIEW NOTES: 1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). 2. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H3. DIMENSIONS "E1" AND "D" DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 4. REFERENCE JEDEC STD MS-012, VARIATION AA. e D DIM A A1 A2 b c D E1 E e h L L1 N 01 aaa bbb ccc DIMENSIONS INCHES MILLIMETERS MIN NOM MAX MIN NOM MAX .069 .053 .010 .004 .065 .049 .020 .012 .010 .007 .189 .193 .197 .150 .154 .157 .236 BSC .050 BSC .010 .020 .016 .028 .041 (.041) 8 8° 0° .004 .010 .008 1.75 1.35 0.25 0.10 1.65 1.25 0.51 0.31 0.25 0.17 4.80 4.90 5.00 3.80 3.90 4.00 6.00 BSC 1.27 BSC 0.25 0.50 0.40 0.72 1.04 (1.04) 8 8° 0° 0.10 0.25 0.20 h h H c A L (L1) DETAIL 01 A Minimum Land Pattern - SOIC - 8 X DIM (C) G Z C G P X Y Z DIMENSIONS INCHES MILLIMETERS (.205) .118 .050 .024 .087 .291 (5.20) 3.00 1.27 0.60 2.20 7.40 Y P NOTES: 1. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY. CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR COMPANY'S MANUFACTURING GUIDELINES ARE MET. 2. REFERENCE IPC-SM-782A, RLP NO. 300A. Contact Information Semtech Corporation Power Management Products Division 200 Flynn Road, Camarillo, CA 93012 Phone: (805)498-2111 FAX (805)498-3804 © 2006 Semtech Corp. 14 www.semtech.com
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