SC1112ATSTR

Triple Low Dropout Regulator Controllers POWER MANAGEMENT Description The SC1112 was designed for the latest high speed motherboards. It includes three low dropout regulator controllers. The controllers provide the power for the system AGTL bus Termination Voltage, Chipset, and clock circuitry. An adjustable controller with a 1.2V reference is available, while two selectable outputs are provided for the VTT (1.25 V or 1.5V, SC1112) or (1.2V or 1.5V, SC1112A) and the AGP (1.5V or 3.3V). The SC1112 low dropout regulators are designed to track the 3.3V power supply as the VTTIN supply is cycled On and Off. A latched short circuit protection is also available for the VTT output. Other features include an integrated charge pump that provides adequate gate drives for the external Mosfets, and a capacitive programable delay for the power good signal. SC1112 .eatures K Triple linear controllers K Selectable and Adjustable Output Voltages K LDOs track input voltage within 200mV (.unction of the Mosfets used) until regulation K Integrated Charge Pump K Programmable Power Good delay Signal K Latched Over Current Protection (VTT) Applications K Pentium® III Motherboards K Triple power supplies Typical Application Circuit +3.3V VTT +5V STBY 1K R1 POWER GOOD C6 330u Q2 5VSTBY ADJGATE C1 10u SC1112/A GND AGPGATE AGPSEN VTTGATE VTTSEN AGPSEL VTTSEL VTTIN C3 0.1u Q3 C14 330u AGP Q1 C2 C18 330u C16 330u C17 0.1u VTT C19 330u C8 330u C9 0.1u ADJ RA ADJSEN 0.1u C11 CAPCAP+ 1u C10 FC DELAY C13 0.1u C12 330u RB 22n C 5 PWRGD VTT SELECT Signal AGP SELECT Signal Revision 7, October 2001 1 www.semtech.com SC1112 POWER MANAGEMENT Absolute Maximum Ratings Parameter 5VSTBY to GND VTTSEN to GND AGPSEN to GND ADJSEN to GND Operating Temperature Range Junction Temperature Range Storage Temperature Range Lead Temperature (Soldering) 10 Sec. Thermal Resistance Junction to Ambient Thermal Impedance Junction to Case ESD Rating (Human Body Model) TA TJ TSTG TL θJ A θJ C ESD Symbol Maximum -0.3 to +7 -0.3 to 5 -0.3 to 5 -0.3 to 5 0 to +70 0 to +125 -65 to +150 300 130 30 2 Units V V V V °C °C °C °C °C/W °C/W kV Electrical Characteristics Unless specified: 5VSTBY=4.75V to 5.25V; VTTIN=3.3V; TA = 25°C Parameter Supply (5VSTBY) Supply Voltage Supply Current VTT Short Circuit Protection VTT Short Circuit Delay Timer Threshold(4) VTT Short Circuit Delay Time(4) VTT Short Circuit Delay Source Current(4) VTT Short Circuit Threshold VTT Pow er Good PWRGD Delay Timer Threshold(5) PWRGD Threashold(5) PWRGD Threashold(5) PWRGD Delay Time(5) PWRGD Delay Time(5) PWRGD Source Current(5) Linear Sections VTT Input Supply Threshold Tracking Difference (1)(3) (4) Symbol Conditions Min Typ Max Units 5VSTBY I5VSTBY SCTh SCtd ISC VTTSCTh PGDelay_TH PGTH_1.2 PGTH_1.5 PGtd_1.2 PGtd_1.5 IPG 5VSTBY = 5V 4.75 6 5 8 5.25 12 V mA 1.5 (Cdelay*SCTH)/ISC 16 650 1.450 1.060 1.330 22 700 1.500 1.085 1.350 (Cdelay*PGTH_1.2)/IPG (Cdelay*PGTH_1.5)/IPG 16 22 28 28 750 1.550 1.110 1.390 V S µA mV V V V S S µA VTTINTH DeltaTRACK VIN = 3.30V, IO = 0A 1.45 1.52 200 1.55 V mV  2001 Semtech Corp. 2 www.semtech.com SC1112 POWER MANAGEMENT Electrical Characteristics (Cont.) Unless specified: 5VSTBY=4.75V to 5.25V; VTTIN=3.3V; TA = 25°C Parameter Linear Sections (Cont.) Output Voltage VTT Symbol Conditions Min Typ Max Units (SC1112A) VTT1.2 (SC1112) VTT1.25 VTT1.5 IO = 0 to 2A, VTTSEL = LOW IO = 0 to 2A, VTTSEL = LOW IO = 0 to 2A, VTTSEL = HIGH IO = 0 to 2A, AGPSEL = LOW IO = 0 to 2A, AGPSEL = HIGH IO = 0 to 2A 1.176 1.225 1.470 1.470 3.234 -2% 90 1.200 1.250 1.500 1.500 3.300 1.2*(1+RA/RB) 120 1 1.224 1.275 1.530 1.530 V V V V Output Voltage AGP AGP1.5 AGP3.3 Output Voltage ADJ VTTSEN Bias Current (SC1112) VTTSEN Bias Current (SC1112A) AGPSEN Bias Current ADJSEN Bias Current VTT Gate Current AD J IbiasVTTSEN IbiasVTTSEN IbiasAGPSEN IbiasADJSEN IsourceVTTgate IsinkVTTgate +2% 140 5 170 5 V µA µA µA µA µA µA µA µA µA µA % % dB 110 150 1 5VSTBY = 4.75V, Vgate = 3.0V 500 500 AGP Gate Current IsourceAGPgate IsinkAGPgate 5VSTBY = 4.75V, Vgate = 3.0V 500 500 ADJ Gate Current IsourceADJgate IsinkADJgate 5VSTBY = 4.75V, Vgate = 3.0V 500 500 Load Regulation Line Regulation Gain (AOL)(2) LOADREG LINEREG GAINLDO VTTIN = 3.30V, IO = 0 to 2A VTTIN = 3.13V to 3.47V, Io = 2A LDOS Output to GATE 0.3 0.3 50 Notes: (1) All electrical characteristics are for the application circuit on page 19. (2) Guaranteed by design (3) Tracking Difference is defined as the delta between 3.3V Vin and the VTT, AGP, ADJ output voltages during the linear ramp up until regulation is achieved. The Tracking Voltage difference might vary depending on MOSFETs Rdson, and Load Conditions. (4) During power up, an internal short circuit glitch timer will start once the VTT Input Voltage exceeds the VTTINTH (1.5V). During the glitch timer immunity time, determined by the Delay capacitor (Delay time is approximately equal to (Cdelay*SCTH)/ISC), the short circuit protection is disabled to allow VTT output to rise above the trip threshold (0.7V). If the VTT output has not risen above the trip threshold after the immunity time has elapsed, the VTT output is latched off and will only be enabled again if either the VTT input voltage or the 5VSTBY is cycled. (5) PWRGD pin is kept low during the power up, until the VTT output has reached its PGtd1.2 or PGtd1.5 level. At that time the PWRGD source current IPG (20uA) is enabled and will start charging the external PWRGD delay capacitor connected to the DELAY pin. Once the capacitor is charged above the PGDelay_TH (1.5V), the PWRGD pin is released from ground.  2001 Semtech Corp. 3 www.semtech.com SC1112 POWER MANAGEMENT Timing Diagrams NORMAL STARTUP CONDITION VTTIN VTTIN=1.5V VTT The delay capacitor does not begin charging until VTTIN has reached 1.5V and VTT is above the powergood threshold of 1.08V. Once DELAY reaches 1.5V, the PWRGD signal goes high. VTTGATE initially turns on hard, until VTT reaches regulation. Then VTTGATE drops to its normal regulating level. DELAY DELAY=1.5V PWRGD VTTGATE SHORT-CIRCUIT STARTUP VTTIN VTTIN=1.5V VTT The delay capacitor does not begin charging until VTTIN has reached 1.5V and VTT is below the short circuit threshold of 0.7V. VTTGATE initially turns on hard and is latched off when DELAY D E L A Y reaches 1.5V and VTT is below 0.7V DELAY=1.5V PWRGD VTTGATE  2001 Semtech Corp. 4 www.semtech.com SC1112 POWER MANAGEMENT Timing Diagrams (Cont.) SHORT-CIRCUIT DURING NORMAL OPERATION VTTIN VTT Once VTT drops out of regulation, VTTGATE turns on harder to try and raise VTT. When VTT drops below 1.08V, the delay capacitor is discharged and PWRGD goes low. When VTT drops below 0.7V, the delay capacitor begins charging. If VTT is still below 0.7V when DELAY reaches 1.5V, VTTGATE is latched off. VTT=1.08V VTT=0.7V DELAY DELAY=1.5V PWRGD VTTGATE SHORT-CIRCUIT AND RECOVERY DURING NORMAL OPERATION VTTIN Once VTT drops out of regulation, VTTGATE turns on harder to try and raise VTT. When VTT drops below 1.08V, the delay capacitor is discharged and PWRGD goes low. When VTT drops below 0.7V, the delay capacitor begins charging. If VTT recovers above 0.7V before DELAY reaches 1.5V, DELAY is again discharged. If VTT reaches 1.08V the delay capacitor begins charging and normal operation continues. VTT VTT=1.08V VTT=0.7V VTT=1.08V DELAY DELAY=1.5V PWRGD VTTGATE  2001 Semtech Corp. 5 www.semtech.com SC1112 POWER MANAGEMENT Pin Configuration Top View 5VSTBY PWRGD DELAY VTTSEL AGPSEL ADJGATE ADJSEN CAP1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 Ordering Information Part Number (1)(2) GND VTTIN VTTGATE VTTSEN AGPGATE AGPSEN FC CAP+ P ackag e Temp Range (TJ) 0° to 125°C SC1112STR SO-16 SC1112ASTR SC1112TSTR TSSOP-16 SC1112ATSTR SC1112EVB Evaluation Board 0° to 125°C (16-Pin SOIC or TSSOP) Pin Descriptions Pin # 1 2 3 4 Pin Name 5VSTBY PWRGD DELAY VTTSEL Pin Function Note: (1) Only available in tape and reel packaging. A reel contains 2500 devices. (2) Part Number (SO-16): SC1112STR = 1.25V and SC1112ASTR = 1.2V. Part Number (TSSOP-16): SC1112TSTR = 1.25V and SC1112ATSTR = 1.2V. 5V Standby input, supplies power for Ref, Charge Pump, Oscillator and FET controllers. Open collector Power Good Flag for VTT output. A capacitor from this pin to GND will program the delay for the Power Good Flag of VTT output and the glitch immunity time. TTL signal that programs the VTT output voltage: VTTSEL = LOW, VTT = 1.2XV VTTSEL = HIGH, VTT = 1.5V TTL signal that programs the AGP output voltage: AGPSEL = LOW, AGP = 1.5V AGPSEL = HIGH, AGP = 3.3V Gate drive output for AGP. Sense input for ADJ. Negative connection to boost capacitor. Positive connection to boost capacitor. Filter capacitor for the internal charge pump should be connected from this pin to GND. Sense input for AGP. Gate drive output for AGP. Sense input for VTT. Gate drive output for VTT. Short circuit sense line connected to the 3.3Vin. Ground. 5 AGPSEL 6 7 8 9 10 11 12 13 14 15 16 ADJGATE A D JS E N C APC AP+ FC AGPSEN AGPGATE VTTSEN VTTGATE VTTIN GND NOTE: (1) All logic level inputs and outputs are open collector TTL compatible.  2001 Semtech Corp. 6 www.semtech.com SC1112 POWER MANAGEMENT Block Diagram 5VSTBY VTTSEL FC 1.5V Bandgap Reference 1.2V + - 1.5V + _ Disable1.5 + _ Vref 1.2V + _ Disable1.2 + _ 1.35V VTTGATE VTTSEN 1.08V 0.7V VTTIN S R Q DELAY _ + Disable1.5 + _ Vref + _ 0.7V + _ VTTSEN ChargePump Oscillator Disable3.3 1.5V 1.5V + _ FC AGPGATE AGPSEN FC PWRGD + _ Pwrgd Threshold 1.2V + _ ADJGATE ADJSEN GND AGPSEL CAP+ CAP-  2001 Semtech Corp. 7 www.semtech.com SC1112 POWER MANAGEMENT Typical Characteristics VTT(1.5V) Output Voltage @ Io = 0A vs Ta 1.5055 1.5035 VTT(1.5V) Output Voltage @ Io = 2A vs Ta 1.5030 1.5050 1.5045 1.5025 1.5040 VTT1.5(V) VTT 1.5 (V) 1.5020 1.5035 1.5015 1.5030 1.5010 1.5025 1.5020 5V Stby = 5.25V 5V Stby = 5.00V 5V Stby = 4.75V 1.5005 5V S tby = 5.25V 5V S tby = 5.00V 5V S tby = 4.75V 1.5000 1.5015 0 10 20 30 40 50 60 70 1.4995 0 10 20 30 40 50 60 70 Ta (°C.) T a (°C .) VTT(1.25V) Output Voltage @ Io = 0A vs Ta 1.2485 1.2465 VTT(1.5V) Output Voltage @ Io = 2A vs Ta 1.2460 1.2480 1.2475 1.2455 1.2470 VTT 1.2(V) VTT1.2(V) 1.2450 1.2465 1.2445 1.2460 1.2440 1.2455 1.2435 5V Stby = 5.25V 5V Stby = 5.00V 5V Stby = 4.75V 1.2450 1.2430 5V Stby = 5.25V 5V Stby = 5.00V 5V Stby = 4.75V 1.2445 0 10 20 30 40 50 60 70 1.2425 0 10 20 30 40 50 60 70 Ta (°C.) Ta (°C.) VTT Input Supply Threshold vs Ta 1.498 116 VTT Sense Bias current vs Ta 5V Stby = 5.25V 5V Stby = 5.00V 5V Stby = 4.75V 114 1.497 1.496 112 1.495 Ibias VTTSEN (uA) 5V Stby = 4.75V 5V Stby = 5.00V 5V Stby = 5.25V 0 10 20 30 40 50 60 70 VTTINTH(V) 110 1.494 108 1.493 1.492 106 1.491 104 0 10 20 30 40 50 60 70 Ta (°C.) Ta (°C.)  2001 Semtech Corp. 8 www.semtech.com SC1112 POWER MANAGEMENT Typical Characteristics (Cont.) VTT Gate Current @ Vgate = 3V, 5V Stby = 4.75V vs Ta 800 Source current Sink current 750 23.40 23.60 VTT Short circuit Delay source current vs Ta 5V Stby = 5.25V 5V Stby = 5.00V 5V Stby = 4.75V 23.20 700 23.00 650 IVTT_Gate(uA) ISC(uA) 0 10 20 30 40 50 60 70 22.80 600 22.60 550 22.40 22.20 500 22.00 450 21.80 400 21.60 0 10 20 30 40 50 60 70 Ta (°C.) Ta (°C.) VTT Short circuit Delay Time (Cdelay = 0.1u.) vs Ta 8.40 8.30 8.20 SCtd(mS) 8.10 8.00 7.90 5V Stby = 4.75V 5V Stby = 5.00V 5V Stby = 5.25V 7.80 7.70 0 10 20 30 40 50 60 70 Ta (°C.) VTT Short circuit Delay Timer Threshold vs Ta 1.515 1.510 1.505 1.500 1.495 SCth(V) 1.490 1.485 1.480 1.475 1.470 5V Stby = 4.75V 5V Stby = 5.00V 5V Stby = 5.25V 1.465 0 10 20 30 40 50 60 70 Ta (°C.)  2001 Semtech Corp. 9 www.semtech.com SC1112 POWER MANAGEMENT Typical Characteristics (Cont.) VTT (1.25V) Power Good Threshold vs Ta 1.098 8.40 1.096 8.30 1.094 8.20 1.092 VTT (1.25V) Power Good Delay Time vs Ta 1.090 1.088 PG td_1.25(mS) PG TH_1.25(V) 8.10 8.00 1.086 7.90 1.084 5V Stby = 5.25V 5V Stby = 5.00V 5V Stby = 4.75V 5V Stby = 4.75V 5V Stby = 5.00V 5V Stby = 5.25V 7.80 1.082 1.080 0 10 20 30 40 50 60 70 7.70 0 10 20 30 40 50 60 70 Ta (°C.) Ta (°C.) VTT (1.5V) Power Good Threshold vs Ta 1.361 1.360 8.30 1.359 1.358 1.357 1.356 1.355 1.354 1.353 1.352 1.351 1.350 0 10 20 30 40 50 60 70 7.90 PGtd_1.5(mS) PGTH_1.5 (V) 8.10 8.40 VTT (1.5V) Power Good Delay Time vs Ta 8.20 8.00 5V Stby = 4.75V 5V Stby = 5.00V 5V Stby = 5.25V 5V Stby = 5.25V 5V Stby = 5.00V 5V Stby = 4.75V 7.80 7.70 0 10 20 30 40 50 60 70 Ta (°C.) Ta (°C.) VTT Power Good Source current vs Ta 23.60 23.40 23.20 23.00 22.80 22.60 22.40 22.20 22.00 21.80 21.60 21.40 0 10 20 30 40 50 60 70 5V Stby = 5.25V 5V Stby = 5.00V 5V Stby = 4.75V IPG(uA) Ta (°C.)  2001 Semtech Corp. 10 www.semtech.com SC1112 POWER MANAGEMENT Typical Characteristics (Cont.) AGP (1.5V) Output Voltage @ Io = 0A vs Ta 1.5055 AGP (1.5V) Output Voltage @ Io = 2A vs Ta 1.5035 1.5030 1.5050 1.5045 1.5025 1.5040 1.5020 1.5035 AGP1.5 (V) 1.5015 AGP1.5(V) 5V Stby = 5.25V 5V Stby = 5.00V 5V Stby = 4.75V 1.5030 1.5010 1.5025 1.5005 1.5020 1.5000 1.5015 1.4995 1.5010 1.4990 5V Stby = 5.25V 5V Stby = 5.00V 5V Stby = 4.75V 1.5005 0 10 20 30 40 50 60 70 1.4985 0 10 20 30 40 50 60 70 Ta (°C.) Ta (°C.) AGP (3.3V) Output Voltage @ Io = 0A vs Ta 3.2900 AGP (3.3V) Output Voltage @ Io = 2A vs Ta 3.2900 3.2890 3.2890 3.2880 3.2880 3.2870 AGP3.3 (V) 3.2870 AGP3.3(V) 5V Stby = 5.25V 5V Stby = 5.00V 5V Stby = 4.75V 3.2860 3.2860 3.2850 3.2850 3.2840 3.2840 3.2830 3.2830 5V Stby = 5.25V 5V Stby = 5.00V 5V Stby = 4.75V 3.2820 0 10 20 30 40 50 60 70 3.2820 0 10 20 30 40 50 60 70 Ta (°C.) Ta (°C.) AGP Sense Bias current vs Ta 142 5V Stby = 5.25V 5V Stby = 5.00V 140 5V Stby = 4.75V AGP Gate Current @ Vgate = 3V, 5V Stby = 4.75 vs Ta 900 Sink current Source current 850 138 800 IbiasAGPSEN (uA) IAGP_Gate(uA) 0 10 20 30 40 50 60 70 136 750 134 700 132 130 650 128 600 0 10 20 30 40 50 60 70 Ta (°C.) Ta (°C.)  2001 Semtech Corp. 11 www.semtech.com SC1112 POWER MANAGEMENT Typical Characteristics (Cont.) ADJ (1.2V) Output Voltage @ Io = 0A vs Ta 1.2020 1.1955 1.1950 ADJ (1.2V) Output Voltage @ Io = 2A vs Ta 1.2010 1.1945 1.2000 1.1940 ADJ1.2(V) 1.1990 ADJ1.2(V) 5V Stby = 5.25V 5V Stby = 5.00V 5V Stby = 4.75V 1.1960 1.1920 1.1935 1.1980 1.1930 1.1970 1.1925 5V Stby = 5.25V 5V Stby = 5.00V 5V Stby = 4.75V 1.1950 0 10 20 30 40 50 60 70 1.1915 0 10 20 30 40 50 60 70 Ta (°C.) Ta (°C.) ADJ Sense Bias current vs Ta 350 330 5V Stby = 4.75V 5V Stby = 5.00V 5V Stby = 5.25V ADJ Gate Current @ Vgate = 3V, 5V Stby = 4.75V vs Ta 900 Sink current Source current 850 310 290 800 IbiasADJSEN (uA) 270 IADJ_Gate(uA) 0 10 20 30 40 50 60 70 250 750 230 700 210 190 650 170 150 600 0 10 20 30 40 50 60 70 Ta (°C.) Ta (°C.)  2001 Semtech Corp. 12 www.semtech.com SC1112 POWER MANAGEMENT Typical Characteristics (Cont.) I 5V Stby vs Ta 7.50 1.60 VTTSEL 7.30 AGPSEL 1.55 Output Select Threshold vs Ta 7.10 1.50 6.90 Output Select Threshold (V) 5V Stby = 5.25V 5V Stby = 5.00V 5V Stby = 4.75V 0 10 20 30 40 50 60 70 1.45 I5vstby (mA) 6.70 6.50 1.40 6.30 1.35 6.10 1.30 5.90 5.70 1.25 5.50 1.20 0 10 20 30 40 50 60 70 Ta (°C.) Ta (°C.) Line Regulation VTTIN = 3.13V to 3.47V Io = 2A vs Ta 160.0E-3 Load Regulation VTTIN = 3.3V Io = 0 to 2A vs Ta 180.0E-3 140.0E-3 170.0E-3 120.0E-3 160.0E-3 Line Regulation(%) 100.0E-3 Load Regulation(%) 150.0E-3 80.0E-3 140.0E-3 60.0E-3 130.0E-3 40.0E-3 VTT 1.25V AGP 1.25V 20.0E-3 120.0E-3 VTT 1.25V AGP 1.25V 110.0E-3 000.0E+0 0 10 20 30 40 50 60 70 100.0E-3 0 10 20 30 40 50 60 70 Ta (°C.) Ta (°C.) Charge Pump Output Voltage vs Ta 9.32 V Charge Pump 9.31 9.30 9.29 Charge Pump Frequency (kHz) 365 9.28 9.27 9.26 9.25 9.24 9.23 9.22 9.21 0 10 20 30 40 50 60 70 345 0 10 370 375 Charge Pump .requency vs Ta Charge Pump Frequency V Charge Pump(V) 360 355 350 20 30 40 50 60 70 Ta (°C.) Ta (°C.)  2001 Semtech Corp. 13 www.semtech.com SC1112 POWER MANAGEMENT Typical Gain & Phase Margin SC1112 Gain / Phase VTT = 1.25V @ 2A 60 Gain Phase (deg) 50 200 180 160 40 140 30 Phase (deg) 30 60 Gain Phase (deg) 50 SC1112 Gain / Phase VTT = 1.5V @ 2A 200 180 160 140 120 Gain (dB) 20 Gain 40 Gain Gain (dB) 20 Phase 100 80 100 10 80 0 60 -10 40 20 0 1000000 10 0 60 -10 40 20 0 1000000 -20 -20 -30 10 100 1000 Freq (Hz) 10000 100000 -30 10 100 1000 Freq (Hz) 10000 100000 SC1112 Gain / Phase ADJ = 1.2V @ 2A 50 Gain Phase (deg) 40 200 180 40 160 140 20 Gain (dB) 30 50 SC1112 Gain / Phase AGP = 1.5V @ 2A 200 Gain Phase (deg) 180 160 Gain 30 Gain 140 10 100 80 Gain (dB) 20 Phase 100 80 10 0 60 -10 40 -20 0 60 40 -10 20 20 0 1000000 -30 10 100 1000 Freq (Hz) 10000 100000 -20 10 100 1000 Freq (Hz) 10000 100000 0 1000000  2001 Semtech Corp. 14 www.semtech.com Phase (deg) Phase Phase (deg) 120 120 Phase (deg) Phase 120 SC1112 POWER MANAGEMENT Applications Infomation Theory Of Operation The SC1112 was designed for the latest high speed mother boards requiring a controled power up sequencing of the Outputs, and a programable delay for the Power good signal. Three Linear controllers have been incorperated into the SC1112. The VTT output can be programmed to either a 1.250V or a 1.500V by applying a LOW or a HIGH control signal to the VTTSEL pin. AGP output can also be prgorammed via AGPSEL pin to a 1.50V or a 3.30V. The SC1112 also provides an Adjustable output which utilizes a resistive voltage divider. The +5VSTBY supply will power the internal Reference, Charge Pump, Oscillator, and the .et controllers. After the +5VSTBy has been established, LDO outputs will track the VTTIN (3.30V) supply as it is applied. An external capaitor connected to the Delay pin will program the VTT short circuit delay time (SCtd), and the PWRGD delay time (PGtd). During power up, an internal short circuit glitch timer will start once the VTT Input Voltage exceeds the VTTINTH (1.5V). During the glitch timer immunity time, determined by the Delay capacitor (Delay time is approximately equal to (Cdelay*SCTH)/ISC), the short circuit protection is disabled to allow VTT output to rise above the trip threashold (0.7V). If the VTT output has not risen above the trip threashold after the immunity time has elapsed, the VTT output is latched off and will only be enabled again if either the VTT input voltage or the 5VSTBY is cycled. PWRGD pin is kept low during the power up, until the VTT output has reached its PGtd1.25 or PGtd1.5 level. At that time the PWRGD source current IPG (20uA) is enabled and will start charging the external PWRGD delay capacitor connected to the DELAY pin. Once the capacitor is charged above the PGDelay_TH (1.5V), the PWRGD pin is released from ground. A detailed timing diagram is shown on pages 4 to 5. Also included is an overcurrent protection circuit that monitors the VTT voltage. If the output voltage drops below 700mV, as would occur during an overcurrent or short condition, the device will pull the drive pin low and latch off the output. .ixed Output Voltage Options (VTT, AGP) Please refer to the Application Circuit on Page 1. The VTT and the AGP fixed output voltage can be programed from a Control logic signal. Table below shows the possible Voltages: VTTSEL 0 0 1 1 AGPSEL 0 1 0 1 VTT 1.25V 1.25V 1.50V 1.50V AGP 1.50V 3.30V 1.50V 3.30V Once the VTTSEL or the AGPSEL signal is established, an internal resistive divider is used to compare the bandgap reference voltage with the feed back output voltage. The drive pin voltage is then adjusted to maintain the output voltage set by the internal resistor divider. Referring to the block diagram on page 7. It is possible to adjust the output voltage of the VTT or AGP, by applying an external resistor divider to the sense pin (please refer to .igure 1 on Page 11). Since the sense pin sinks a nominal 100µA, the resistor values should be selected to allow 10mA to flow through the divider. This will ensure that variations in this current do not adversely affect output voltage regulation. Thus a target value for R2 (maximum) can be calculated: R2 ≤ V OUT ( FIXED ) 10 mA Ω The output voltage can only be adjusted upwards from the fixed output voltage, and can be calculated using the following equation: V OUT ( ADJUSTED ) R1   = VOUT ( FIXED ) •  1 +  + R1 • 100 µ A R2   Volts  2001 Semtech Corp. 15 www.semtech.com SC1112 POWER MANAGEMENT Applications Infomation (Cont.) +3.3V +5V STBY C1 10u SC1112 5VSTBY ADJGATE ADJSEN CAPCAP+ FC DELAY PWRGD GND AGPGATE AGPSEN VTTGATE VTTSEN AGPSEL VTTSEL VTTIN C3 0.1u Q3 C14 330u AGP Q1 C2 C18 330u C16 330u C17 0.1u VTT C19 330u C8 330u C9 0.1u R1 VTT SELECT Signal AGP SELECT Signal R2 .igure 1: Adjusting The Output Voltage of VTT or AGP Adjustable Output Voltage Option The adjustable output voltage option does not have an internal resistor divider. The adjust pin connects directly to the inverting input of the error amplifier, and the output voltage is set using external resistors (please refer to .igure 2). In this case, the adjust pin sources a nominal 0.5µA, so the resistor values should be selected to allow 50µA to flow through the divider. Again, a target value for RB (maximum) can be calculated: RB ≤ 1 .200 V 50 µ A C6 330u Q2 VTT 1K R1 POWER GOOD 5VSTBY ADJGATE ADJSEN SC11 Ω 0.1u C11 CAP- The output voltage can be calculated as follows: VOUT RA   = 1 .200 •  1 +  − 0.5µA • RA RB   RA 1u C10 CAP+ FC DELAY C13 0.1u C12 330u RB 22n C5 PWRGD The maximum output voltage that can be obtained from the adjustable option is determined by the input supply voltage and the RDS(ON) and gate threshold voltage of the external MOS.ET. Assuming that the MOS.ET gate threshold voltage is sufficiently low for the output voltage chosen and a worst-case drive voltage of 9V, VOUT(MAX) is given by: VOUT (MAX ) = VTTIN (MIN ) − IOUT (MAX ) • R DS (ON )(MAX ) .igure 2  2001 Semtech Corp. 16 www.semtech.com SC1112 POWER MANAGEMENT Applications Infomation (Cont.) Short Circuit Protection The VTT short circuit protection feature of the SC1112 is implemented by using the RDS(ON) of the MOS.ET. As the output current increases, the regulation loop maintains the output voltage by turning the .ET on more and more. Eventually, as the RDS(ON) limit is reached, the MOS.ET will be unable to turn on any further, and the output voltage will start to fall. When the VTT output voltage falls to approximately 700mV, the LDO controller is latched off, setting output voltage to 0V. Power must be cycled to reset the latch. To prevent false latching due to capacitor inrush currents or low supply rails, the current limit latch is initially disabled. It is enabled once the short circuit delay time has elapsed. Timing diagram on pages 4 to 5 will show a detailed operation of the Short circuit protection circuitry. To be most effective, the MOS.ET RDS(ON) should not be selected artificially low. The MOS.ET should be chosen so that at maximum required current, it is almost fully turned on. If, for example, a supply of 1.5V at 4A is required from a 3.3V ± 5% rail, the maximum allowable RDS(ON) would be: R DS ( ON )( MAX ) = Layout Guidelines One of the advantages of using the SC1112 to drive an external MOS.ET is that the bandgap reference and control circuitry do not need to be located right next to the power device, thus a very accurate output voltage can be obtained since heating effects will be minimal. The 0.1µ. bypass capacitor should be located close to the +5VSTBY supply pin, and connected directly to the ground plane. The ground pin of the device should also be connected directly to the ground plane. The sense or adjust pin does not need to be close to the output voltage plane, but should be routed to avoid noisy traces if at all possible. Power dissipation within the device is practically negligible, requiring no special consideration during layout. (0 .95 • 3 .3 − 1 .5 • 1 .025 ) ≈ 400 m Ω 4 To allow for temperature effects 200mΩ would be a suitable room temperature maximum, allowing a peak short circuit current of approximately 15A for a short time before shutdown. Capacitor Selection Output Capacitors: low ESR aluminum electrolytic or tantalum capacitors are recommended for bulk capacitance, with ceramic bypass capacitors for decoupling high frequency transients. Input Capacitors: p lacement of low ESR aluminum electrolytic or tantalum capacitors at the input to the MOS.ET (VTTIN) will help to hold up the power supply during fast load changes, thus improving overall transient response. The +5VSTBY supply should be bypassed with a 10µ. ceramic capacitor.  2001 Semtech Corp. 17 www.semtech.com SC1112 POWER MANAGEMENT Evaluation Board Gerbers Board Layout Assembly Top Board Layout Assembly Bottom Board Layout Top  2001 Semtech Corp. 18 Board Layout Bottom www.semtech.com  2001 Semtech Corp. +5VSTBY J1 +5VSTBY C1 10uF J2 +3.3V J3 J4 J5 J7 16 15 14 13 12 11 10 C10 9 1uF C9 0.1uF + C8 330uF + C19 330uF VTT J8 J9 VTT VTT J10 G N D J12 G N D Q1 IRFR120N C3 0.1uF VTT POWER GOOD J6 U1 1 5VSTBY PWRGD DELAY VTTSEL AGPSEL ADJGATE ADJSEN CAPCAP+ FC AGPSEN AGPGATE VTTSEN VTTGATE VTTIN GND 2 C5 3 4 5 6 7 8 ** GND +3.3V +3.3V GND GND POWER MANAGEMENT Evaluation Board Schematic C4 0.1uF + C2 + C18 330uF 330uF R1 1k SC1112CS 22nF C6 + 330uF R2 100k R3 Q2 IRFR120N 100k C7 0.1uF ADJ J11 ADJ 19 RA C13 0.1uF AGP SELECT Signal J15 ** ADJ VTT SELECT Signal J14 C11 0.1uF J13 C12 + ** A D J = 1 . 2 * ( 1 + R A / R B ) 3 3 0 u F C15 0.1uF Q3 IRFR120N + C14 330uF RB * GND JP1 * JP1 = OPEN, VTT = 1.5 V * JP1 = SHORT, VTT = 1.25 V * JP2 = OPEN, AGP = 3.3 V * JP2 = SHORT, AGP = 1.5 V J16 11 JP2 * GND J17 AGP J18 J19 C17 0.1uF + C16 330uF AGP AGP J20 G N D J21 G N D 22 www.semtech.com SC1112 SC1112 POWER MANAGEMENT Evaluation Board Bill of Materials Item 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 Qty. 1 8 8 1 1 2 1 9 2 1 2 2 1 1 2 3 3 2 1 Reference C1 C2,C6,C8,C12,C14,C16,C18,C19 C3,C4,C7,C9,C11,C13,C15,C17 C5 C 10 JP1,JP2 J1 J2,J5,J7,J10,J12,J16,J17,J20,J21 J3,J4 J6 J8,J9 J11,J12 J1 4 J1 5 J18,J19 Q1,Q2,Q3 R1,RA,RB R2,R3 U1 10uF 330uF 0.1uF 22nF 1uF TP2 +5VSTBY GND +3.3V Power Good VTT AD J VTT SELECT Signal AGP SELECT Signal AGP IRFR120N 1k 100k SC1112STR Part 1206 CPCYL/D.2.75/LS.100/.031 0805 0805 0805 VIA/2P E D 5052 E D 5052 E D 5052 E D 5052 E D 5052 E D 5052 E D 5052 E D 5052 E D 5052 DPAKFET 0805 0805 SO-16 Foot Print Outline Drawing - TSSOP-16  2001 Semtech Corp. 20 www.semtech.com SC1112 POWER MANAGEMENT Outline Drawing - SO-16 Land Pattern - SO-16 Contact Information Semtech Corporation Power Management Products Division 652 Mitchell Rd., Newbury Park, CA 91320 Phone: (805)498-2111 .AX (805)498-3804  2001 Semtech Corp. 21 www.semtech.com