SC1205CS

HIGH SPEED SYNCHRONOUS POWER MOSFET DRIVER PRELIMINARY - December 7, 1999 SC1205 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION The SC1205 is a cost effective Dual MOSFET Driver designed for switching High and Low side Power MOSFETs. Each driver is capable of driving a 3000pF load in 20ns rise/fall time and has a 20ns max propagation delay from input transition to the gate of the power FET’s. An internal Overlap Protection Circuit prevents shoot-through from Vin to GND in the main switching and synchronous MOSFET’s. The Overlap Protection circuit ensures the Bottom FET does not turn on until the Top FET source has reached a voltage low enough to prevent cross-conduction. The high current drive capability (2A peak) allows fast switching, thus reducing switching losses at high (1MHz) PWM frequencies. The high voltage CMOS process allows operation from 5-25 Volts at top MOSFET drain, thus making SC1205 suitable for battery powered applications. Connecting Enable pin (EN) to logic low shuts down both drives and reduces operating current to less than 10uA. An Under-Voltage-Lock-Out circuit is included to guarantee that both driver outputs are low when the 5V logic level is less than or equal to 4.4V (typ) at supply ramp up (4.35V at supply ramp down). An Internal temperature sensor shuts down all drives in the event of overtemperature. SC1205 is fabricated utilizing CMOS technology for low quiescent current. The SC1205 is offered in a standard SO-8 package. FEATURES • • • • • • • • • • • • • • Fast rise and fall times (15ns typical with 3000pf load) 2Amp peak drive current 14ns max Propagation delay (BG going low) Adaptive Non-overlapping Gate Drives provide shoot-through protection Floating top drive switches up to 25V Under-Voltage lock-out Overtemperature protection Less than 10uA supply current when EN is low Low cost APPLICATIONS High Density sunchronous power supplies Motor Drives/Class-D amps/Half bridge drivers High frequency (to 1.2 MHz) operation allows use of small inductors and low cost caps in place of electrolytics Portable computers Battery powered applications ORDERING INFORMATION DEVICE (1) PACKAGE SO-8 TEMP. RANGE (T J) 0 - 125°C SC1205CS Note: (1) Add suffix ‘TR’ for tape and reel. PIN CONFIGURATION BLOCK DIAGRAM Top View (SO-8) 1 © 1999 SEMTECH CORP. 652 MITCHELL ROAD NEWBURY PARK CA 91320 HIGH SPEED SYNCHRONOUS POWER MOSFET DRIVER PRELIMINARY - December 7, 1999 SC1205 ABSOLUTE MAXIMUM RATINGS Parameter VCC Supply Voltage BST to PGND BST to DRN DRN to PGND OVP_S to PGND Input pin Continuous Power Dissipation Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Operating Temperature Range Storage Temperature Range Lead Temperature (Soldering) 10 sec NOTE: (1) Specification refers to application circuit in Figure 1. Symbol VMAX5V VMAXBST-PGND VMAXBST-DRN VMAXDRN-PGN VMAXOVP_S-PGND CO Pd θϑΧ θJA TJ TSTG TLEAD Conditions Maximum 7 30 7 25 10 -0.3 to 7.3 0.66 2.56 40 150 0 to +125 -65 to +150 300 Units V V V V V V W °C/W °C/W °C °C °C Tamb = 25°C, TJ = 125°C Tcase = 25°C, TJ = 125°C ELECTRICAL CHARACTERISTICS (DC OPERATING SPECIFICATIONS) Unless specified: -0 < θJ < 125°C; VCC = 5V; 4V < VBST < 26V PARAMETER POWER SUPPLY Supply Voltage Quiescent Current, operating Quiescent Current UNDER-VOLTAGE LOCKOUT Start Threshold Hysteresis Logic Active Threshold VSTART VhysUVLO VACT 4.2 4.4 0.05 1.5 4.6 V V V VCC Iq_op Iq_stby VCC VCC = 5V, CO = 0V EN = 0V 4.15 5 1 10 6.0 V ma µA SYMBOL CONDITIONS MIN TYP MAX UNITS 2 © 1999 SEMTECH CORP. 652 MITCHELL ROAD NEWBURY PARK CA 91320 HIGH SPEED SYNCHRONOUS POWER MOSFET DRIVER PRELIMINARY - December 7, 1999 SC1205 ELECTRICAL CHARACTERISTICS (DC OPERATING SPECIFICATIONS) Cont. PARAMETER CO High Level Input Voltage Low Level Input Voltage THERMAL SHUTDOWN Over Temperature Trip Point Hysteresis HIGH-SIDE DRIVER Peak Output Current Output Resistance IPKH RsrcTG RsinkTG LOW-SIDE DRIVER Peak Output Current Output Resistance IPKL RsrcBG RsinkBG duty cycle < 2%, tpw < 100µs, TJ = 125°C VV_5 = 4.6V, VBG = 4V (src), or VLOWDR = 0.5V (sink) 2 1.2 A Ω Ω duty cycle < 2%, tpw < 100µs, TJ = 125°C, VBST - VDRN = 4.5V, VTG = 4.0V (src)+VDRN or VTG = 0.5V (sink)+VDRN 2 1 A Ω Ω TOTP THYST 165 10 °C °C VIH VIL 2.0 0.8 V V SYMBOL CONDITIONS MIN TYP MAX UNITS .7 1.0 3 © 1999 SEMTECH CORP. 652 MITCHELL ROAD NEWBURY PARK CA 91320 HIGH SPEED SYNCHRONOUS POWER MOSFET DRIVER PRELIMINARY - December 7, 1999 SC1205 AC OPERATING SPECIFICATIONS PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS HIGH-SIDE DRIVER rise time trTG, CI = 3nF, VBST - VDRN = 4.6V, T J = 125°C CI = 3nF, VBST - VDRN = 4.6V, T J = 125°C CI = 3nF, VBST - VDRN = 4.6V, T J = 125°C CI = 3nF, VBST - VDRN = 4.6V, T J = 125°C 14 23 ns fall time tf TG 12 19 ns propagation delay time, TG going high propagation delay time, TG going low LOW-SIDE DRIVER tpdhTG 20 32 ns tpdlTG 15 24 ns rise time trBG CI = 3nF, VV_5 = 4.6V, T J = 125°C CI = 3nF, VV_5 = 4.6V, T J = 125°C CI = 3nF, VV_5 = 4.6V, T J = 125°C, DRN < 1V CI = 3nF, VV_5 = 4.6V, T J = 125°C 15 24 ns fall time trBG 13 21 ns propagation delay time BG going high progagation delay time BG going low UNDER-VOLTAGE LOCKOUT tpdhBGHI 12 19 ns tpdlBG 7 12 ns V_5 ramping up tpdhUVLO EN is High 10 us V_5 ramping down tpdlUVLO EN is High 10 us 4 © 1999 SEMTECH CORP. 652 MITCHELL ROAD NEWBURY PARK CA 91320 HIGH SPEED SYNCHRONOUS POWER MOSFET DRIVER PRELIMINARY - December 7, 1999 SC1205 PIN DESCRIPTION Pin # 1 Pin Name DRN Pin Function This pin connects to the junction of the switching and synchronous MOSFET’s. This pin can be subjected to a -2V minimum relative to PGND without affecting operation. Output gate drive for the switching (high-side) MOSFET. Bootstrap pin. A capacitor is connected between BST and DRN pins to develop the floating bootstrap voltage for the high-side MOSFET. The capacitor value is typically between 0.1µF and 1µF (ceramic). TTL-level input signal to the MOSFET drivers. When high, this pin enables the internal circuitry of the device. When low, TG, BG and PRDY are forced low and the supply current (5V) is less than 10µA. +5V supply. A .22-1µF ceramic capacitor should be connected from 5V to PGND very close to this pin. Output drive for the synchronous MOSFET. Ground. 2 3 TG BST 4 5 CO EN 6 7 8 NOTE: VS BG PGND (1) All logic level inputs and outputs are open collector TTL compatible. TIMING DIAGRAM 5 © 1999 SEMTECH CORP. 652 MITCHELL ROAD NEWBURY PARK CA 91320 HIGH SPEED SYNCHRONOUS POWER MOSFET DRIVER PRELIMINARY - December 7, 1999 SC1205 Figure 1 - Timing characteristics while driving a 3nf load at Tamb = 125°C after CO low to high transition. Ch1. CO input going high (start of cycle) Ch2. BG drive Ch3. TG drive Cload = 3 nf C_delay = 0 Ch1. DRN (phase node) voltage going low Ch2. BG going high Cload = 3 nf C_delay = 0 Figure 2-Timing characteristics while driving a 3nf load at Tamb = 125°C after DRN voltage transition to a low voltage (DRN