SC1205H

High Speed Synchronous Power MOS.ET Driver POWER MANAGEMENT Description The SC1205H is a cost effective, High Drive Voltage, Dual MOS.ET Driver designed for switching High and Low side Power MOS.ETs. Each driver is capable of Ultrafast rise/fall times as well as a 20ns max propagation delay from input transition to the gate of the power .ET’s. An internal Overlap Protection circuit prevents shootthrough from Vin to GND in the main and synchronous MOS.ETs. The Adaptive Overlap Protection circuit ensures the Bottom .ET does not turn on until the Top .ET source has reached a voltage low enough to prevent cross-conduction. Higher gate voltage drive capability of 8V (top and bottom) optimally reduces Rds_on of power MOS.ETs without excessive driver and .ET switching losses. The high current drive capability (5A peak) allows fast switching, thus reducing switching losses at high (up to 1MHz) frequencies without causing thermal stress on the driver. The high voltage CMOS process allows operation from 518 Volts at top MOS.ET drain, thus making SC1205H suitable for battery powered applications. Connecting Enable pin (EN) to logic low shuts down both drives and reduces operating current to less than 10µA. An under-voltage-lock-out and overtemperature shutdown feature is included to guarantee proper and safe operation. The SC1205H is offered in a standard SO-8 package. SC1205H PRELIMINARY .eatures K Higher efficiency (>90%) K .ast rise and fall times (15ns typical with 3000pf K Higher gate drive voltage (8V) for optimum load) MOS.ET RDS_ON at minimum switching loss K Ultra-low (