SC1302AISTRT

Dual High Speed Low-Side MOSFET Driver POWER MANAGEMENT Description The SC1302A/B/C/D/E/F family are low cost dual lowside MOSFET drivers. These drivers accept TTL-compatible inputs and are capable of supplying high current outputs (> 2A peak) to external MOSFETs. Fast switching allows operation up to 1 MHz. The SC1302A/B/C is available in six configurations: SC1302A is a dual noninverting, SC1302B is a dual inverting and SC1302C is a one inverting plus one non-inverting output. The SC1302D/E/F is the derivative part from SC1302A/ B/C with pin 1 (EN) and pin 8 (SHDN) internally tied to VCC. An under-voltage lockout circuit guarantees that the driver outputs are low when Vcc is less than 4.5V (typ). An internal temperature sensor shuts down the driver in the event of over temperature. SC1302A/B/C/D/E/F Features +4.5V to +16.5V operation Fast rise and fall times (20ns typical with 1000pf load) Dual MOSFET driver 2A peak drive current 40ns propagation delay 8-pin SOIC / MSOP lead free packages. This product is fully WEEE and RoHS compliant Enable/disable control TTL-compatible input Under voltage lockout with hysteresis Low shutdown supply current Over temperature protection ESD protection Dual inverting/non-inverting and inverting/non-inverting configurations Applications Switch-mode power supplies Battery powered applications Solenoid and motor drives Typical Application Circuit +12V V lo a d 10uF 0 .1 u F Load A S C1302A 6 VCC IN A O U TA 1 8 EN S H D N O U TB IN B GND 3 5 7 Load B In p u tA 2 In p u tB 4 Revision: June 11, 2008 1 www.semtech.com SC1302A/B/C/D/E/F POWER MANAGEMENT Absolute Maximum Ratings PRELIMINARY Exceeding the specifications below may result in permanent damage to the device, or device malfunction. Operation outside of the parameters specified in the Electrical Characteristics section is not implied. Exposure to Absolute Maximum rated conditions for extended periods of time may affect device reliability. Parameter Supply Voltage Operating Supply Voltage Input Voltages Peak Output Currents Enable Voltage (SC1302A/B/C) Shutdown Voltage (SC1302A/B/C) Continuous Power Dissipation Operating Temperature Range Thermal Resistance Junction to Ambient (MSOP) Thermal Resistance Junction to Ambient (SOIC) Storage Temperature Range Lead Temperature (Soldering)10 sec ESD Rating (Human Body Model) Symbol V CC VCC VINA, VINB IOUTA, IOUTB V EN VSHDN Pd TJ θJ A θJ A TSTG TLEAD ESD Typ -0.3 to 20 -0.3 to 16.5 -0.3 to VCC 3 -0.3 to VCC -0.3 to VCC Internally limited -40 to +125 206 165 -65 to +150 260 2 Units V V V A V V W °C °C/W °C/W °C °C kV DC Electrical Characteristics Unless otherwise specified: -40°C < TA = T < 125°C, VCC = 12V, VIN = 5V, VEN = 5V (SC1302A/B/C), J VSHDN = 5V (SC1302A/B/C). Parameter Supply Current Quiescent Current Quiescent Current Quiescent Current Under-Voltage Lockout Threshold Voltage Hysteresis Enable for SC1302A/B/C Enable Voltage Disable Voltage  2008 Semtech Corp. Symbol Conditions Min Typ Max Units IQ IQ IQ VCC < VSTART VEN = VSHDN = 3V for SC1302A/B/C, VINA = VINB = 3V VSHDN = 0V for SC1302A/B/C 1 5.7 3 1.8 8.1 8 mA mA µA VSTART VSHDN = VEN = 3V for SC1302A/B/C, VINA = VINB = 3V VSHDN = VEN = 3V for SC1302A/B/C, VINA = VINB = 3V 4.2 250 4.5 320 4.7 475 V mV V EN V EN 0 < V EN < V C C 0 < V EN < V C C 2 2.0 0.8 V V www.semtech.com SC1302A/B/C/D/E/F POWER MANAGEMENT DC Electrical Characteristics (Cont.) Unless otherwise specified: -40°C < TA = T < 125°C, VCC = 12V, VIN = 5V, VEN = 5V (SC1302A/B/C), J VSHDN = 5V (SC1302A/B/C). Parameter Symbol Conditions Min Typ Max Units Enable for SC1302A/B/C (Cont.) Delay to Output (1) Delay to Output (1) Enable Input Current Input High Level Input Voltage Low Level Input Voltage Input Current VIH VIL IIN 0 < VIN < VCC 0 < VIN < VCC 0 < VIN < VCC Non-Inverting Input(s) of SC1302A/C/D/F 0 < VIN < VCC Inverting Input(s) of SC1302B/C/E/F Output Output Peak Current IPK_SOURCE IPK_SINK Shutdow n SC1302A/B/C (Cont.) SHDN Input Voltage High SHDN Input Voltage Low SHDN Pin Current Thermal Shutdow n Over Temperature Trip Point(1) Hysteresis(1) TJ_OT 150 10 °C °C VSHDN VSHDN ISHDN VSHDN = 5V 32 2 0.3 40 V V µA VOUT = 0.5V, tPW < 10uS VOUT = VCC - 0.5V, tPW < 10uS 1600 1600 mA mA (2) tD_EN tD_DIS IEN EN for low to high EN from high to low 0 < VIN < VCC 10 70 55 14 19 ns ns µA 2.0 0.8 13 18.5 V V µA -8 µA AC Electrical Characteristics Unless otherwise specified: TA = T = 25°C, VCC = 12V, VEN = 5V, CL = 1000pF J Parameter Rise time(1) Fall time(1) Propagation delay time(1) Propagation delay time(1) Symbol tR tF tD1 tD2 Conditions See Timing Diagram See Timing Diagram TA = -40°C ~ 125°C TA = -40°C ~ 125°C Min Typ 20 20 53 41 Max Units ns ns 70 60 ns ns Notes: (1) Guaranteed by design. Not 100% tested in production. (2) Negative sign indicates that the input current flows out of the device.  2008 Semtech Corp. 3 www.semtech.com SC1302A/B/C/D/E/F POWER MANAGEMENT Timing Diagram 5V 90% PRELIMINARY I npu t 0V 10% tR tF 90 % 10% 90% 10% N on -in ve rting O u tp u t SC1302A I nve rtin g O u tp u t SC1302B 90% tF tR 90% 10% 10% tD2 tD 1 Pin Descriptions Pin # SC1302A/D SC1302B/E SC1302C/F Pin Function Enable/disable control. When the EN is driven low, both outputs are low. When left open, both outputs are low. Enable both drivers by tying EN pin to a voltage greater than 2V. No connection on versions D, E and F. TTL-compatible input to the driver A. When left open, Pin 7 is low. Ground. TTL-compatible input to the driver B. When left open, Pin 5 is low. Output gate drive B for external MOSFET. Supply: +4.5V to +16.5V supply. During UVLO, the outputs are held low. Output gate drive A for external MOSFET. Shutdown pin. Apply a voltage from 2V to VCC to enable device. Pull below 0.3V for low-power shut down. No connection on versions D, E and F. 1 EN/NC EN/NC EN/NC 2 3 4 5 6 7 8 INA GND INB OUTB VCC OUTA SHDN/NC INA GND INB OUTB VCC OUTA SHDN/NC INA GND INB OUTB VCC OUTA SHDN/NC  2008 Semtech Corp. 4 www.semtech.com SC1302A/B/C/D/E/F POWER MANAGEMENT Pin Configuration Top View SC1302A/D (Dual Non-Inverting) Ordering Information Part Number (2) SC1302AISTRT SC1302BISTRT SC1302CISTRT SC1302DSTRT SC1302ESTRT SC1302FSTRT SOIC-8 -40°C to +125°C P ackag e (1) Temp. Range (TA) EN/NC INA GND INB 1 2 3 4 8 7 6 5 SHDN/NC OUTA VCC OUTB (8-Pin SOIC (A/D) or MSOP (A only) Top View SC1302B/E (Dual Inverting) SC1302AIMSTRT SC1302BIMSTRT SC1302CIMSTRT MSOP-8 -40°C to +125°C EN/NC INA GND INB 1 2 3 4 8 7 6 5 SHDN/NC OUTA VCC OUTB Notes: (1) Only available in tape and reel packaging. A reel contains 2500 devices. (2) Lead free product.This product is fully WEEE and RoHS compliant. (8-Pin SOIC (B/E) or MSOP (B only) Top View SC1302C/F (Inverting + Non-Inverting) EN/NC INA GND INB 1 2 3 4 8 7 6 5 SHDN/NC OUTA VCC OUTB (8-Pin SOIC (C/F) or MSOP (C only)  2008 Semtech Corp. 5 www.semtech.com SC1302A/B/C/D/E/F POWER MANAGEMENT Block Diagrams EN VCC EN PRELIMINARY VCC INA BIAS PREDRIVER OUTA INA BIAS PREDRIVER OUTA SHDN BANDGAP SHDN BANDGAP INB PREDRIVER B IAS BIAS OUTB INB PREDRIVER OUTB SC1302A EN S C1302B GND GND VCC INA BIAS PREDRIVER OUTA SHDN BANDGAP BIAS INB PREDRIVER OUTB S C1302C GND SC1302D SC1302E  2008 Semtech Corp. 6 SC1302F www.semtech.com SC1302A/B/C/D/E/F POWER MANAGEMENT Typical Characteristics Rise and Fall Time vs. Supply Volta ge 25 CL = 1 000pF T A = 25° C Rise and Fall Time vs. Capa citive Loa d 80 VCC = 1 2V f= 200K H z C T A = 25° 60 Time (ns) Time (ns) 20 tf tr tf 40 tr 20 15 10 4 8 12 16 Supply Voltage (V) 0 100 1000 Capacitive Load (pF) 10000 Supply Current vs. Capacitive Loa d 40 2V VCC = 1 O ne D rverR unni i ng C T A = 25° Input Pin Current 15 10 5 0 -5 I nver i tng N on-nveri i tng Supply Currnt (mA) 30 20 200K H z 10 1 00K H z Iin (uA) 0 100 1000 Capacitive Load (pF) 10000 -10 0 4 Vin (V) 8 12  2008 Semtech Corp. 7 www.semtech.com SC1302A/B/C/D/E/F POWER MANAGEMENT Applications Information The SC1302A/B/C/D/E/F is a high speed, high peak current dual MOSFET driver. It is designed to drive power MOSFETs with ultra-low rise/fall time and propagation delays. As the switching frequency of PWM controllers is increased to reduce power converters volume and cost, fast rise and fall times are necessary to minimize switching losses. While discrete solution can achieve reasonable drive capability, implementing delay and other housekeeping functions necessary for safe operation can become cumbersome and costly. The SC1032A/B/C/ D/E/F presents a total solution for the high-speed, high power density applications. Wide input supply range of 4.5V - 16.5V allows use in battery powered applications as well as distributed power systems. Supply Bypass and Layout A 4.7µF to 10µF tantalum bypass capacitor with low ESR (equivalent series resistance) and an additional 0.1µF ceramic capacitor in parallel are recommended as supply bypass to control switching and supply transients. As with any high speed, high current circuit, proper layout is critical in achieving optimum performance of the SC1302A/B/C/D/E/F. Attention should be paid to the proper placement of the driver, the switching MOSFET and the bypass capacitors. The driver should be placed as close as possible to the external MOSFETs to eliminate the possibility of oscillation caused by trace inductance and the MOSFET gate capacitance. A resistor in the range of 10W could be used in series with the gate drive to damp the ringing if the drive output path is not short enough. The bypass capacitors should also be placed closely between Vcc and GND of the driver. A Schottky diode may be used to connect the ground and the output pin to avoid latchups in some applications. Drive Capability and Power Dissipation The SC1302A/B/C/D/E/F is able to deliver 1.6A peak current for driving capacitive loads, such as MOSFETs. Fast switching of the MOSFETs significantly reduces switching losses for high frequency applications. Thermal stress is reduced and system reliability is improved. PRELIMINARY For simplicity, we assume that the gate capacitance of a MOSFET is constant. The power delivered from the power supply can be estimated based on this simplification. The energy needed to charge the capacitor is given by: 1 ⋅ C ⋅ V2 2 where C is the load capacitance and V is the output voltage swing of the driver. E ON = During turn off, the same amount of energy is dumped to the ground. Therefore, the energy dissipated in one switching cycle is: E TOTAL = C ⋅ V 2 The power dissipation due to the gate driving actions is given by: PGATE = f ⋅ C ⋅ V 2 where, f is the switching frequency. with V CC= 12V, C = 1nF and f = 200kHz, the power dissipation per output is: PGATE = (200 kHz ) ⋅ (1 nF) ⋅ (12) = 29mW 2 The corresponding supply current is: I= PGATE 29mW = = 2.4mA VCC 12V Thermal Information The driver’s junction temperature must be kept within the rated limit at any time. The application system has to effectively remove the heat generated in the driver in order for proper functions and performance. If the junction temperature reaches 150oC, the internal protection circuit will be triggered to shut down the gate driver. The power dissipation of the SC1302A/B/C/D/E/F should be derated according to the following formula: Power Dissipatio n < A 125°C − TA θjA where T = ambient temperature.  2008 Semtech Corp. 8 www.semtech.com SC1302A/B/C/D/E/F POWER MANAGEMENT Outline Drawing - MSOP-8 e/2 A N 2X E/2 PIN 1 INDICATOR ccc C 2X N/2 TIPS 12 e B E1 E D DIMENSIONS INCHES MILLIMETERS DIM MIN NOM MAX MIN NOM MAX A A1 A2 b c D E1 E e L L1 N 01 aaa bbb ccc .043 .000 .006 .030 .037 .015 .009 .003 .009 .114 .118 .122 .114 .118 .122 .193 BSC .026 BSC .016 .024 .032 (.037) 8 0° 8° .004 .005 .010 1.10 0.00 0.15 0.75 0.95 0.22 0.38 0.08 0.23 2.90 3.00 3.10 2.90 3.00 3.10 4.90 BSC 0.65 BSC 0.40 0.60 0.80 (.95) 8 0° 8° 0.10 0.13 0.25 aaa C SEATING PLANE D A2 A GAGE PLANE 0.25 H c C A1 bxN bbb C A-B D L (L1) DETAIL 01 A SIDE VIEW NOTES: 1. SEE DETAIL A CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). 2. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H3. DIMENSIONS "E1" AND "D" DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 4. REFERENCE JEDEC STD MO-187, VARIATION AA. Land Pattern - MSOP-8 X DIM (C) G Z C G P X Y Z DIMENSIONS INCHES MILLIMETERS (.161) .098 .026 .016 .063 .224 (4.10) 2.50 0.65 0.40 1.60 5.70 Y P NOTES: 1. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY. CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR COMPANY'S MANUFACTURING GUIDELINES ARE MET.  2008 Semtech Corp. 9 www.semtech.com SC1302A/B/C/D/E/F POWER MANAGEMENT Outline Drawing - SO-8 A N 2X E/2 E1 E 1 ccc C 2X N/2 TIPS 2 e/2 B D aaa C SEATING PLANE A2 A C bxN bbb A1 C A-B D GAGE PLANE 0.25 SEE DETAIL SIDE VIEW L (L1) DETAIL e D PRELIMINARY DIM A A1 A2 b c D E1 E e h L L1 N 01 aaa bbb ccc DIMENSIONS INCHES MILLIMETERS MIN NOM MAX MIN NOM MAX .069 .053 .004 .010 .049 .065 .012 .020 .007 .010 .189 .193 .197 .150 .154 .157 .236 BSC .050 BSC .010 .020 .016 .028 .041 (.041) 8 0° 8° .004 .010 .008 1.35 1.75 0.10 0.25 1.25 1.65 0.31 0.51 0.17 0.25 4.80 4.90 5.00 3.80 3.90 4.00 6.00 BSC 1.27 BSC 0.25 0.50 0.40 0.72 1.04 (1.04) 8 0° 8° 0.10 0.25 0.20 h h H c 01 A A NOTES: 1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). 2. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H3. DIMENSIONS "E1" AND "D" DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 4. REFERENCE JEDEC STD MS-012, VARIATION AA. Land Pattern - SO-8 X DIM (C) G Z C G P X Y Z DIMENSIONS INCHES MILLIMETERS (.205) .118 .050 .024 .087 .291 (5.20) 3.00 1.27 0.60 2.20 7.40 Y P NOTES: 1. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY. CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR COMPANY'S MANUFACTURING GUIDELINES ARE MET. 2. REFERENCE IPC-SM-782A, RLP NO. 300A. Contact Information Semtech Corporation Power Management Products Division 200 Flynn Rd., Camarillo, CA 93012 Phone: (805)498-2111 FAX (805)498-3804  2008 Semtech Corp. 10 www.semtech.com