SM36.TC

SM05 THRU SM36 T VS Diode Array PROTECTION PRODUCTS Description The SM series of transient voltage suppressors (TVS) are designed to protect components which are connected to data and transmission lines from voltage surges caused by ESD (electrostatic discharge), EFT (electrical fast transients), and lightning. TVS diodes are characterized by their high surge capability, low operating and clamping voltages, and fast response time. This makes them ideal for use as board level protection of sensitive semiconductor components. The dual-junction common-anode design allows the user to protect one bidirectional data line or two unidirectional lines. The low profile SOT23 package allows flexibility in the design of “crowded” circuit boards. The SM series will meet the surge requirements of IEC 61000-4-2 (Formerly IEC 801-2), Level 4, “Human Body Model” for air and contact discharge. Features u 300 watts peak pulse power (tp = 8/20µs) u Transient protection for data & power lines to IEC 61000-4-2 (ESD) 15kV (air), 8kV (contact) IEC 61000-4-4 (EFT) 40A (tp=5/50ns) IEC 61000-4-5 (Lightning) 12A (tp=1.2/50µs) Protects one bidirectional line or two unidirectional lines Working Voltages: 5V, 12V, 15V, 24 and 36V Low clamping voltage Solid-state silicon avalanche technology u u u u u u u u u u u u u Mechanical Characteristics JEDEC SOT23 package Molding compound flammability rating: UL 94V-0 Marking : Marking Code Packaging : Tape and Reel per EIA 481 Applications Cellular Handsets and Accessories Portable Electronics Industrial Controls Set-Top Box Servers, Notebook, and Desktop PC Circuit Diagram Schematic & PIN Configuration SOT23 (Top View) Revision 9/2000 1 www.semtech.com SM05 THRU SM36 PROTECTION PRODUCTS Absolute Maximum Rating R ating Peak Pulse Pow er (tp = 8/20µ s) Th ermal Resistance, Junction to A mb ient Lead Sold ering Temp erature Op erating Temp erature Storage Temp erature Symbo l Pp k qJA TL TJ TSTG Value 300 556 260 (10 sec.) -55 to +125 -55 to +150 Units Watts °C/W °C °C °C Electrical Characteristics SM05 Par ame te r Reverse Stand -Off Voltage Reverse Breakd ow n Voltage Reverse Leakage Current Clamp ing Voltage Maximum Peak Pulse Current Junction Cap acitance Junction Cap acitance Symbo l V RWM V BR IR VC Ip p Cj Cj It = 1mA V RWM = 5V, T=25°C IPP = 1A , tp = 8/20µ s tp = 8/20µ s Pi n 1 t o 2 V R = 0V, f = 1MHz Pin 1 to 3 and Pi n 2 t o 3 V R = 0V, f = 1MHz 6 20 9.8 17 350 400 Co nd itio ns Minimum Typ ical Maximum 5 Units V V µA V A pF pF SM12 Par ame te r Reverse Stand -Off Voltage Reverse Breakd ow n Voltage Reverse Leakage Current Clamp ing Voltage Maximum Peak Pulse Current Junction Cap acitance Junction Cap acitance Symbo l V RWM V BR IR VC Ip p Cj Cj It = 1mA V RWM = 12V, T=25°C IPP = 1A , tp = 8/20µ s tp = 8/20µ s Pi n 1 t o 2 V R = 0V, f = 1MHz Pin 1 to 3 and Pi n 2 t o 3 V R = 0V, f = 1MHz 13.3 1 19 12 120 150 Co nd itio ns Minimum Typ ical Maximum 12 Units V V µA V A pF pF ã 2000 Semtech Corp. 2 www.semtech.com SM05 THRU SM36 PROTECTION PRODUCTS Electrical Characteristics (Continued) SM15 Par ame te r Reverse Stand -Off Voltage Reverse Breakd ow n Voltage Reverse Leakage Current Clamp ing Voltage Maximum Peak Pulse Current Junction Cap acitance Junction Cap acitance SM24 Par ame te r Reverse Stand -Off Voltage Reverse Breakd ow n Voltage Reverse Leakage Current Clamp ing Voltage Maximum Peak Pulse Current Junction Cap acitance Junction Cap acitance Symbo l V RWM V BR IR VC Ip p Cj Cj It = 1mA V RWM = 24V, T=25°C IPP = 1A , tp = 8/20µ s tp = 8/20µ s Pi n 1 t o 2 V R = 0V, f = 1MHz Pin 1 to 3 and 2 to 3 V R = 0V, f = 1MHz 26.7 1 43 5 50 60 Co nd itio ns Minimum Typ ical Maximum 24 Units V V µA V A pF pF Symbo l VRWM V BR IR VC Ip p Cj Cj Co nd itio ns Minimum Typ ical Maximum 15 Units V V It = 1mA V RWM = 15V, T=25°C IPP = 1A , tp = 8/20µ s tp = 8/20µ s Pi n 1 t o 2 V R = 0V, f = 1MHz Pin 1 to 3 and 2 to 3 V R = 0V, f = 1MHz 16.7 1 24 10 75 100 µA V A pF pF SM36 Par ame te r Reverse Stand -Off Voltage Reverse Breakd ow n Voltage Reverse Leakage Current Clamp ing Voltage Maximum Peak Pulse Current Junction Cap acitance Junction Cap acitance ã 2000 Semtech Corp. Symbo l VRWM V BR IR VC Ip p Cj Cj Co nd itio ns Minimum Typ ical Maximum 36 Units V V It = 1mA V RWM = 36V, T=25°C IPP = 1A , tp = 8/20µ s tp = 8/20µ s Pi n 1 t o 2 V R = 0V, f = 1MHz Pin 1 to 3 and 2 to 3 V R = 0V, f = 1MHz 3 40 1 60 4 40 45 µA V A pF pF www.semtech.com SM05 THRU SM36 PROTECTION PRODUCTS Typical Characteristics Non-Repetitive Peak Pulse Power vs. Pulse Time 10 110 100 Power Derating Curve Peak Pulse Power - PPP (kW) 90 % of Rated Power or I PP 80 70 60 50 40 30 20 10 0 1 0.1 0.01 0.1 1 10 Pulse Duration - tp (µs) 100 1000 0 25 50 75 100 125 150 Ambient Temperature - TA (oC) Pulse Waveform 110 100 90 80 Percent of IPP 70 60 50 40 30 20 10 0 0 5 10 15 Time (µs) 20 25 30 td = IPP/2 e -t Waveform Parameters: tr = 8µs td = 20µs ESD Pulse Waveform (Per IEC 61000-4-2) Level IEC 61000-4-2 Discharge Parameters First Peak Current (A) 1 2 3 4 7.5 15 22.5 30 Peak Current at 30 ns (A) 4 8 12 16 Peak Current at 60 ns (A) 8 4 6 8 Test Test Voltage Voltage (Contact ( A ir Disch arge) Disch arge) (kV ) (kV ) 2 4 6 8 2 4 8 15 ã 2000 Semtech Corp. 4 www.semtech.com SM05 THRU SM36 PROTECTION PRODUCTS Applications Information Device Connection Options The SM series is designed to protect one bidirectional or two unidirectional data or I/O lines operating at 5 to 36 volts. Connection options are as follows: l Device Schematic & Pin Configuration l Bidirectional: Pin 1 is connected to the data line and pin 2 is connected to ground (Since the device is symmetrical, these connections may be reversed). For best results, the ground connection should be made directly to a ground plane on the board. The path length should be kept as short as possible to minimize parasitic inductance. Pin 3 is not connected. Unidirectional: Data lines are connected to pin 1 and pin 2. Pin 3 is connected to ground. For best results, this pin should be connected directly to a ground plane on the board. The path length should be kept as short as possible to minimize parasitic inductance. RS-232 Transceiver Protection Example Circuit Board Layout Recommendations for Suppression of ESD. Good circuit board layout is critical for the suppression of fast rise-time transients such as ESD. The following guidelines are recommended (Refer to application note SI99-01 for more detailed information): l l l l l l Place the TVS near the input terminals or connectors to restrict transient coupling. Minimize the path length between the TVS and the protected line. Minimize all conductive loops including power and ground loops. The ESD transient return path to ground should be kept as short as possible. Never run critical signals near board edges. Use ground planes whenever possible. ã 2000 Semtech Corp. 5 www.semtech.com SM05 THRU SM36 PROTECTION PRODUCTS Outline Drawing - SOT23 Land Pattern - SOT23 Note 1 : Grid placement courtyard is 8 x 8 elements (4mm x 4mm) in accordance with the international grid detailed in IEC Publication 97. ã 2000 Semtech Corp. 6 www.semtech.com SM05 THRU SM36 PROTECTION PRODUCTS Marking Codes Par t Numbe r SM05 SM12 SM15 SM24 SM36 Mar king Co d e M05 M12 M15 M24 M36 Ordering Information Par t Numbe r SM05.TC SM05.TG SM12.TC SM12.TG SM15.TC SM15.TG SM24.TC SM24.TG SM36.TC Wo r king Vo ltage 5V 5V 12V 12V 15V 15V 24V 24V 36V Qty p e r R e e l 3,000 10,000 3,000 10,000 3,000 10,000 3,000 10,000 3,000 R e e l Size 7 Inch 13 Inch 7 Inch 13 Inch 7 Inch 13 Inch 7 Inch 13 Inch 7 Inch Contact Information Semtech Corporation Protection Products Division 652 Mitchell Rd., Newbury Park, CA 91320 Phone: (805)498-2111 FAX (805)498-3804 ã 2000 Semtech Corp. 7 www.semtech.com