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SMS12CTC

SMS12CTC

  • 厂商:

    SEMTECH

  • 封装:

  • 描述:

    SMS12CTC - TVS Diode Array For ESD and Latch-Up Protection   - Semtech Corporation

  • 详情介绍
  • 数据手册
  • 价格&库存
SMS12CTC 数据手册
TVS Diode Array For ESD and Latch-Up Protection PROTECTION PRODUCTS Description The SMS series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD and other voltage-induced transient events. Each device will protect up to five lines. They are available with operating voltages of 5V, 12V, 15V and 24V. They are unidirectional devices and may be used on lines where the signal polarities are above ground. TVS diodes are solid-state devices designed specifically for transient suppression. They feature large crosssectional area junctions for conducting high transient currents. They offer desirable characteristics for board level protection including fast response time, low operating and clamping voltage and no device degradation. The SMS series devices may be used to meet the immunity requirements of IEC 61000-4-2, level 4. The low cost SOT23-6L package makes them ideal for use in portable electronics such as cell phones, PDA’s, and notebook computers. SMS05C THRU SMS24C Features u Transient protection for data lines to IEC 61000-4-2 (ESD) 15kV (air), 8kV (contact) IEC 61000-4-4 (EFT) 40A (5/50ns) IEC 61000-4-5 (Lightning) 24A (8/20µs) Small package for use in portable electronics Protects five I/O lines Working voltages: 5V, 12V, 15V and 24V Low leakage current Low operating and clamping voltages Solid-state silicon avalanche technology u u u u u u u u u u u u u u u u u u u Mechanical Characteristics EIAJ SOT23-6L package Molding compound flammability rating: UL 94V-0 Marking : Marking Code Packaging : Tape and Reel per EIA 481 Applications Cell phone Handsets and Accessories Microprocessor Based Equipment Personal Digital Assistants (PDA’s) Notebooks, Desktops, and Servers Portable Instrumentation Set Top Box Peripherals MP3 Players Cordless Phones Circuit Diagram Schematic & PIN Configuration SOT23-6L (Top View) Revision 9/2000 1 www.semtech.com SMS05C THRU SMS24C PROTECTION PRODUCTS Absolute Maximum Rating R ating Peak Pulse Pow er (tp = 8/20µs) Peak Pulse Current (tp = 8/20µs) Peak Forw ard Voltage (IF=1A, tp =8/20µs) Lead Soldering Temp erature Op erating Temp erature Storage Temp erature Symbo l Pp k I PP V FP TL TJ TSTG Value 300 24 1.5 260 (10 sec.) -55 to +125 -55 to +150 Units Watts A V °C °C °C Electrical Characteristics SMS05C Par ame te r Reverse Stand-Off Voltage Reverse Breakdow n Voltage Reverse Leakage Current Clamp ing Voltage Clamp ing Voltage Junction Cap acitance Symbo l VRWM V BR IR VC VC Cj It = 1mA VRWM = 5V, T=25°C IPP = 5A, tp = 8/20µs IPP = 24A, tp = 8/20µs Betw een I/O Pins and Gnd V R = 0V, f = 1MHz 325 6 20 9.8 14.5 400 Co nd itio ns Minimum Typ ical Maximum 5 Units V V µA V V pF SMS12C Par ame te r Reverse Stand-Off Voltage Reverse Breakdow n Voltage Reverse Leakage Current Clamp ing Voltage Clamp ing Voltage Junction Cap acitance Symbo l VRWM V BR IR VC VC Cj It = 1mA VRWM = 12V, T=25°C IPP = 5A, tp = 8/20µs IPP = 15A, tp = 8/20µs Betw een I/O Pins and Gnd V R = 0V, f = 1MHz 135 13.3 1 19 23 150 Co nd itio ns Minimum Typ ical Maximum 12 Units V V µA V V pF ã 2000 Semtech Corp. 2 www.semtech.com SMS05C THRU SMS24C PROTECTION PRODUCTS Electrical Characteristics (Continued) SMS15C Par ame te r Reverse Stand-Off Voltage Reverse Breakdow n Voltage Reverse Leakage Current Clamp ing Voltage Clamp ing Voltage Junction Cap acitance Symbo l VRWM V BR IR VC VC Cj It = 1mA VRWM = 15V, T=25°C IPP = 5A, tp = 8/20µs IPP = 12A, tp = 8/20µs Betw een I/O Pins and Gnd V R = 0V, f = 1MHz 100 16.7 1 24 29 125 Co nd itio ns Minimum Typ ical Maximum 15 Units V V µA V V pF SMS24C Par ame te r Reverse Stand-Off Voltage Reverse Breakdow n Voltage Reverse Leakage Current Clamp ing Voltage Clamp ing Voltage Junction Cap acitance Symbo l VRWM V BR IR VC VC Cj It = 1mA VRWM = 24V, T=25°C IPP = 5A, tp = 8/20µs IPP = 8A, tp = 8/20µs Betw een I/O Pins and Gnd V R = 0V, f = 1MHz 60 26.7 1 40 44 75 Co nd itio ns Minimum Typ ical Maximum 24 Units V V µA V V pF ã 2000 Semtech Corp. 3 www.semtech.com SMS05C THRU SMS24C PROTECTION PRODUCTS Typical Characteristics Non-Repetitive Peak Pulse Power vs. Pulse Time 10 Peak Pulse Power - PPP (kW) Power Derating Curve 110 100 90 % of Rated Power or IPP 80 70 60 50 40 30 20 10 1 0.1 0.01 0.1 1 10 Pulse Duration - tp (µ s) 100 1000 0 0 25 50 75 100 125 150 Ambient Temperature - TA (oC) Pulse Waveform 110 100 90 80 Percent of IPP 70 60 50 40 30 20 10 0 0 5 10 15 Time (µs) 20 25 30 td = IPP/2 e -t Clamping Voltage vs. Peak Pulse Current 45 Clamping Voltage - V C (V) Waveform Parameters: tr = 8µs td = 20µs 40 SMS24C 35 30 25 20 15 10 5 0 0 5 10 15 20 SMS05C SMS15C SMS12C Waveform Parameters: tr = 8µs td = 20µs 25 30 Peak Pulse Current - IPP (A) Forward Voltage vs. Forward Current 5 4.5 Forward Voltage - V F (V) 4 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 Forward Current - IF (A) Waveform Parameters: tr = 8µs td = 20µs ã 2000 Semtech Corp. 4 www.semtech.com SMS05C THRU SMS24C PROTECTION PRODUCTS Applications Information Device Connection for Protection of Five Data Lines The SMSxxC is designed to protect up to five unidirectional data lines. The device is connected as follows: 1. Unidirectional protection of five I/O lines is achieved by connecting pins 1, 3, 4, 5 and 6 to the data lines. Pin 2 is connected to ground. The ground connection should be made directly to the ground plane for best results. The path length is kept as short as possible to reduce the effects of parasitic inductance in the board traces. SMSxxC Circuit Diagram Circuit Board Layout Recommendations for Suppression of ESD. Good circuit board layout is critical for the suppression of ESD induced transients. The following guidelines are recommended: l l l l l l Protection of Five Unidirectional Lines Place the SMSxxC near the input terminals or connectors to restrict transient coupling. Minimize the path length between the SMSxxC and the protected line. Minimize all conductive loops including power and ground loops. The ESD transient return path to ground should be kept as short as possible. Never run critical signals near board edges. Use ground planes whenever possible. ã 2000 Semtech Corp. 5 www.semtech.com SMS05C THRU SMS24C PROTECTION PRODUCTS Outline Drawing SO-8 Outline Drawing -- SOT23-6L Land Pattern - SOT23-6L ã 2000 Semtech Corp. 6 www.semtech.com SMS05C THRU SMS24C PROTECTION PRODUCTS Marking Codes Par t Numbe r SMS05C SMS12C SMS15C SMS24C Mar king Co d e C05 C12 C15 C24 Note: Pin 1 Identified with a dot. Ordering Information Par t Numbe r SMS05C.TC SMS05C.TG SMS12C.TC SMS12CTG SMS15C.TC SMS15C.TG SMS24C.TC SMS24C.TG Wo r king Vo ltage 5V 5V 12V 12V 15V 15V 24V 24V Qty p e r Reel 3,000 10,000 3,000 10,000 3,000 10,000 3,000 10,000 R e e l Size 7 Inch 13 Inch 7 Inch 13 Inch 7 Inch 13 Inch 7 Inch 13 Inch Note: (1) No suffix indicates tube pack. Contact Information Semtech Corporation Protection Products Division 652 Mitchell Rd., Newbury Park, CA 91320 Phone: (805)498-2111 FAX (805)498-3804 ã 2000 Semtech Corp. 7 www.semtech.com
SMS12CTC
1. 物料型号:型号为STM32F103C8T6,是一款基于ARM Cortex-M3内核的32位微控制器,具有多种外设接口和丰富的功能。

2. 器件简介:该器件是意法半导体(STMicroelectronics)生产的高性能微控制器,广泛应用于工业控制、消费电子和汽车电子等领域。

3. 引脚分配:该芯片具有48个引脚,包括电源引脚、地引脚、I/O引脚、通信接口引脚等,具体分配请参考数据手册。

4. 参数特性:主频最高可达72MHz,内置64KB的Flash存储器和20KB的RAM,支持多种通信协议如USART、SPI、I2C等。

5. 功能详解:具备多种功能模块,包括定时器、模数转换器、数模转换器、通用同步/异步收发器等,能够满足复杂的控制需求。

6. 应用信息:适用于需要高性能处理和多接口通信的应用场景,如智能家居控制、工业自动化设备、医疗设备等。

7. 封装信息:采用LQFP48封装,具有较好的电气性能和散热性能,适合在多种环境下使用。
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