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SMS24TC

SMS24TC

  • 厂商:

    SEMTECH

  • 封装:

  • 描述:

    SMS24TC - TVS Diode Array For ESD and Latch-Up Protection   - Semtech Corporation

  • 详情介绍
  • 数据手册
  • 价格&库存
SMS24TC 数据手册
TVS Diode Array For ESD and Latch-Up Protection PROTECTION PRODUCTS Description The SMS series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD and other voltage-induced transient events. Each device will protect up to four lines. They are available with operating voltages of 5V, 12V, 15V and 24V. They are unidirectional devices and may be used on lines where the signal polarities are above ground. TVS diodes are solid-state devices designed specifically for transient suppression. They feature large crosssectional area junctions for conducting high transient currents. They offer desirable characteristics for board level protection including fast response time, low operating and clamping voltage and no device degradation. The SMS series devices may be used to meet the immunity requirements of IEC 61000-4-2, level 4. The low cost SOT23-6L package makes them ideal for use in portable electronics such as cell phones, PDA’s, and notebook computers. SMS05 THRU SMS24 Features u Transient protection for data lines to IEC 61000-4-2 (ESD) 15kV (air), 8kV (contact) IEC 61000-4-4 (EFT) 40A (5/50ns) IEC 61000-4-5 (Lightning) 24A (8/20µs) Small package for use in portable electronics Protects four I/O lines Working voltages: 5V, 12V, 15V and 24V Low leakage current Low operating and clamping voltages Solid-state silicon avalanche technology u u u u u u u u u u u u u u u u u u u Mechanical Characteristics EIAJ SOT23-6L package Molding compound flammability rating: UL 94V-0 Marking : Marking Code Packaging : Tape and Reel per EIA 481 Applications Cell phone Handsets and Accessories Microprocessor Based Equipment Personal Digital Assistants (PDA’s) and Pagers Desktops PC and Servers Notebook, Laptop, and Palmtop Computers Portable Instrumentation Peripherals MP3 Players Cordless Phones Circuit Diagram Schematic & PIN Configuration SOT23-6L (Top View) Revision 9/2000 1 www.semtech.com SMS05 THRU SMS24 PROTECTION PRODUCTS Absolute Maximum Rating R ating Peak Pulse Pow er (tp = 8/20µs) Peak Pulse Current (tp = 8/20µs) ESD Voltage (HBM p er IEC 61000-4-2) Lead Soldering Temp erature Op erating Temp erature Storage Temp erature Symbo l Pp k I PP V PP TL TJ TSTG Value 350 24 >25 260 (10 sec.) -55 to +125 -55 to +150 Units Watts A kV °C °C °C Electrical Characteristics SMS05 Par ame te r Reverse Stand-Off Voltage Reverse Breakdow n Voltage Reverse Leakage Current Clamp ing Voltage Clamp ing Voltage Junction Cap acitance Symbo l VRWM V BR IR VC VC Cj It = 1mA VRWM = 5V, T=25°C IPP = 5A, tp = 8/20µs IPP = 24A, tp = 8/20µs Betw een I/O Pins and Gnd V R = 0V, f = 1MHz 325 6 20 9.8 14.5 400 Co nd itio ns Minimum Typ ical Maximum 5 Units V V µA V V pF SMS12 Par ame te r Reverse Stand-Off Voltage Reverse Breakdow n Voltage Reverse Leakage Current Clamp ing Voltage Clamp ing Voltage Junction Cap acitance Symbo l VRWM V BR IR VC VC Cj It = 1mA VRWM = 12V, T=25°C IPP = 5A, tp = 8/20µs IPP = 15A, tp = 8/20µs Betw een I/O Pins and Gnd V R = 0V, f = 1MHz 135 13.3 1 19 23 150 Co nd itio ns Minimum Typ ical Maximum 12 Units V V µA V V pF ã 2000 Semtech Corp. 2 www.semtech.com SMS05 THRU SMS24 PROTECTION PRODUCTS Electrical Characteristics (Continued) SMS15 Par ame te r Reverse Stand-Off Voltage Reverse Breakdow n Voltage Reverse Leakage Current Clamp ing Voltage Clamp ing Voltage Junction Cap acitance Symbo l VRWM V BR IR VC VC Cj It = 1mA VRWM = 15V, T=25°C IPP = 5A, tp = 8/20µs IPP = 12A, tp = 8/20µs Betw een I/O Pins and Gnd V R = 0V, f = 1MHz 100 16.7 1 24 29 125 Co nd itio ns Minimum Typ ical Maximum 15 Units V V µA V V pF SMS24 Par ame te r Reverse Stand-Off Voltage Reverse Breakdow n Voltage Reverse Leakage Current Clamp ing Voltage Clamp ing Voltage Junction Cap acitance Symbo l VRWM V BR IR VC VC Cj It = 1mA VRWM = 24V, T=25°C IPP = 5A, tp = 8/20µs IPP = 8A, tp = 8/20µs Betw een I/O Pins and Gnd V R = 0V, f = 1MHz 60 26.7 1 40 44 75 Co nd itio ns Minimum Typ ical Maximum 24 Units V V µA V V pF ã 2000 Semtech Corp. 3 www.semtech.com SMS05 THRU SMS24 PROTECTION PRODUCTS Typical Characteristics Non-Repetitive Peak Pulse Power vs. Pulse Time 10 Peak Pulse Power - PPP (kW) Power Derating Curve 110 100 90 % of Rated Power or IPP 80 70 60 50 40 30 20 10 1 0.1 0.01 0.1 1 10 Pulse Duration - tp (µ s) 100 1000 0 0 25 50 75 100 o 125 150 Ambient Temperature - TA ( C) Pulse Waveform 110 100 90 80 Percent of IPP 70 60 50 40 30 20 10 0 0 5 10 15 Time (µs) 20 25 30 td = IPP/2 e -t Clamping Voltage vs. Peak Pulse Current 45 Clamping Voltage - V C (V) Waveform Parameters: tr = 8µs td = 20µs 40 SMS24 35 30 25 20 15 10 5 0 0 5 10 15 20 SMS05 SMS15 SMS12 Waveform Parameters: tr = 8µs td = 20µs 25 30 Peak Pulse Current - IPP (A) Forward Voltage vs. Forward Current 5 4.5 Forward Voltage - V F (V) 4 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 Forward Current - IF (A) Waveform Parameters: tr = 8µs td = 20µs ã 2000 Semtech Corp. 4 www.semtech.com SMS05 THRU SMS24 PROTECTION PRODUCTS Applications Information Device Connection for Protection of Four Data Lines The SMSxx is designed to protect up to four unidirectional data lines. The device is connected as follows: 1. Unidirectional protection of four I/O lines is achieved by connecting pins 1, 3, 4 and 6 to the data lines. Pin 2 and 5 are connected to ground. The ground connections should be made directly to the ground plane for best results. The path length is kept as short as possible to reduce the effects of parasitic inductance in the board traces. SMSxx Circuit Diagram Circuit Board Layout Recommendations for Suppression of ESD Good circuit board layout is critical for the suppression of ESD induced transients. The following guidelines are recommended: l l l l l l Protection of Four Unidirectional Lines Place the SMSxx near the input terminals or connectors to restrict transient coupling. Minimize the path length between the SMSxx and the protected line. Minimize all conductive loops including power and ground loops. The ESD transient return path to ground should be kept as short as possible. Never run critical signals near board edges. Use ground planes whenever possible. ã 2000 Semtech Corp. 5 www.semtech.com SMS05 THRU SMS24 PROTECTION PRODUCTS Outline Drawing SO-8 Outline Drawing -- SOT23-6L Land Pattern - SOT23-6L ã 2000 Semtech Corp. 6 www.semtech.com SMS05 THRU SMS24 PROTECTION PRODUCTS Marking Codes Par t Numbe r SMS05 SMS12 SMS15 SMS24 Mar king Co d e 05/05 12/12 15/15 24/24 Ordering Information Par t Numbe r SMS05.TC SMS05.TG SMS12.TC SMS12.TG SMS15.TC SMS15.TG SMS24.TC SMS24.TG Wo r king Vo ltage 5V 5V 12V 12V 15V 15V 24V 24V Qty p e r Reel 3,000 10,000 3,000 10,000 3,000 10,000 3,000 10,000 R e e l Size 7 Inch 13 Inch 7 Inch 13 Inch 7 Inch 13 Inch 7 Inch 13 Inch Note: (1) No suffix indicates tube pack. Contact Information Semtech Corporation Protection Products Division 652 Mitchell Rd., Newbury Park, CA 91320 Phone: (805)498-2111 FAX (805)498-3804 ã 2000 Semtech Corp. 7 www.semtech.com
SMS24TC
1. 物料型号: - SMS05、SMS12、SMS15、SMS24

2. 器件简介: - SMS系列TVS阵列设计用于保护敏感电子设备免受ESD和其他电压引起的瞬态事件的损害或锁定。每个设备最多可保护四条线路,提供5V、12V、15V和24V的工作电压。这些是单向设备,可用于信号极性高于地线的线路上。TVS二极管是专为瞬态抑制而设计的固态设备,具有大的横截面积结,可传导高瞬态电流。它们提供理想的板级保护特性,包括快速响应时间、低工作和钳位电压以及无设备退化。

3. 引脚分配: - 引脚1、3、4和6连接到数据线,引脚2和5连接到地。地连接应直接连接到地平面以获得最佳效果,路径长度应尽可能短,以减少板迹中的寄生电感效应。

4. 参数特性: - 包括反向工作电压、反向击穿电压、反向漏电流、钳位电压和结电容等参数,具体数值根据不同型号(SMS05、SMS12、SMS15、SMS24)有所不同。

5. 功能详解: - 这些TVS阵列提供数据线的瞬态保护,符合IEC 61000-4-2(ESD)、IEC 61000-4-4(EFT)和IEC 61000-4-5(Lightning)标准。它们具有小尺寸封装,适用于便携式电子设备,如手机、PDA和笔记本电脑。

6. 应用信息: - 应用于手机、微处理器基础设备、个人数字助理(PDA)和寻呼机、桌面PC和服务器、笔记本电脑和掌上电脑、便携式仪器外围设备、MP3播放器、无绳电话等。

7. 封装信息: - 使用EIAJ SOT23-6L封装,模塑料阻燃等级为UL 94V-0。标记代码和包装按照EIA 481标准,带卷轴。
SMS24TC 价格&库存

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