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UCLAMP2511T

UCLAMP2511T

  • 厂商:

    SEMTECH

  • 封装:

  • 描述:

    UCLAMP2511T - Low Profile Clamp 1-Line ESD protection - Semtech Corporation

  • 详情介绍
  • 数据手册
  • 价格&库存
UCLAMP2511T 数据手册
PROTECTION PRODUCTS - MicroClamp® PROTECTION Description The μClamp series of Transient Voltage Suppressors (TVS) are designed to replace multilayer varistors (MLVs) in portable applications such as cell phones, notebook computers, and PDAs. They offer superior electrical characteristics such as lower clamping voltage and no device degradation when compared to MLVs. They are designed to protect sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD), lightning, electrical fast transients (EFT), and cable discharge events (CDE). The μClamp®2511T is constructed using Semtech’s proprietary EPD process technology. The EPD process provides low standoff voltages with significant reductions in leakage currents and capacitance over siliconavalanche diode processes. They feature a true operating voltage of 2.5 volts for superior protection when compared to traditional pn junction devices. The μClamp2511T is in a 2-pin SLP1006P2T package. It measures 1.0 x 0.6 x 0.4mm. The leads are spaced at a pitch of 0.65mm and are finished with lead-free NiPdAu. Each device will protect one line operating at 2.5 volts. It gives the designer the flexibility to protect single lines in applications where arrays are not practical. They may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (±15kV air, ±8kV contact discharge). The combination of small size and high ESD surge capability makes them ideal for use in portable applications such as cellular phones, digital cameras, and MP3 players. ® Low Profile μClamp® 1-Line ESD protection Features Transient protection for data lines to IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC 61000-4-4 (EFT) 40A (tp = 5/50ns) Cable Discharge Event (CDE) Ultra-small package (1.0 x 0.6 x 0.4mm) Protects one data line Low reverse current: 10nA typical (VR=2.5V) Working voltage: 2.5V Low leakage current Solid-state silicon-avalanche technology uClamp2511T Mechanical Characteristics SLP1006P2T package Pb-Free, Halogen Free, RoHS/WEEE Compliant Nominal Dimensions: 1.0 x 0.6 x 0.4 mm Lead Finish: NiPdAu Molding compound flammability rating: UL 94V-0 Marking : Marking code Packaging : Tape and Reel Applications Cellular Handsets & Accessories Portable Instrumentation Keypads, Side Keys, LCD Displays Notebooks & Desktop Computers MP3 Players Dimensions 1.0 0.60 0.65 Schematic & PIN Configuration 0.40 Nominal Dimensions (mm) Revision 10/09/2009 1 SLP1006P2T (Bottom View) www.semtech.com uClamp2511T PROTECTION PRODUCTS Absolute Maximum Rating R ating Peak Pulse Power (tp = 8/20μs) Maximum Peak Pulse Current (tp = 8/20μs) ESD p er IEC 61000-4-2 (Air) ESD p er IEC 61000-4-2 (Contact) Op erating Temp erature Storage Temp erature Symbol Pp k Ip p VESD TJ TSTG Value 40 5 +/- 20 +/- 15 -40 to +85 -55 to +150 Units Watts Amps kV °C °C Electrical Characteristics (T=25oC) Parameter Reverse Stand-Off Voltage Punch-Through Voltage Snap -Back Voltage Reverse Leakage Current Clamp ing Voltage Clamp ing Voltage Junction Cap acitance Symbol VRWM V PT VSB IR VC VC Cj IPT = 2μA ISB = 50mA VRWM = 2.5V IPP = 1A, tp = 8/20μs IPP = 5A, tp = 8/20μs I/O p in to Gnd VR = 0V, f = 1MHz 6 2.7 2.8 0.01 0.05 5.5 8 10 3.1 Conditions Minimum Typical Maximum 2.5 3.6 Units V V V μA V V pF © 2009 Semtech Corp. 2 www.semtech.com uClamp2511T PROTECTION PRODUCTS Non-Repetitive Peak Pulse Power vs. Pulse Time 1 Clamping Voltage vs. Peak Pulse Current 10 9 Peak Pulse Power - P PP (kW) Clamping Voltage - VC (V) 8 7 6 5 4 3 2 1 Waveform Parameters: tr = 8μs td = 20μs 0 1 2 3 4 5 6 0.1 0.01 0.1 1 10 Pulse Duration - tp ( s) 100 1000 0 Peak Pulse Current - IPP (A) Normalized Junction Capacitance vs. Reverse Voltage CH1 S21 Typical Insertion Loss (S21) LOG 6 dB / REF 0 dB 1: -2.2287 dB 800 MHz 0 dB 12 1.6 f = 1 MHz 1.4 1.2 Cj(VR) / Cj(VR=0V) 1 0.8 0.6 0.4 0.2 0 0 0.5 1 1.5 2 Reverse Voltage - VR (V) 2.5 3 2: -2.3884 dB 900 MHz 3 -6 dB -12 dB -18 dB -24 dB -30 dB -36 dB -42 dB -48 dB 3: -5.5200 dB 1.8 GHz 4 4: -13.643 dB 2.5 GHz 1 MHz START . 030 MHz 10 MHz 100 MHz 3 1 GHz GHz STOP 3000. 000000 MHz ESD Clamping (Pin 1 to 2 and 2 to 1) (8kV Contact per IEC 61000-4-2) ESD Clamping (Pin 1 to 2 and 2 to 1) (-8kV Contact per IEC 61000-4-2) Note: Data is taken with a 10x attenuator © 2009 Semtech Corp. 3 Note: Data is taken with a 10x attenuator www.semtech.com uClamp2511T PROTECTION PRODUCTS Applications Information Device Connection Options The μClamp2511T is designed to protect one data line operating up to 2.5 volts. It will present a high impedance to the protected line up to 2.5 volts. It will “turn on” when the line voltage exceeds 2.7 volts. The device is bidirectional and may be used on lines where the signal polarity is above and below ground. These devices are not recommended for use on DC power supply lines due to their snap-back voltage characteristic. EPD TVS Characteristics These devices are constructed using Semtech’s proprietary EPD technology. The structure of the EPD TVS is vastly different from the traditional pn-junction devices. At voltages below 5V, high leakage current and junction capacitance render conventional avalanche technology impractical for most applications. However, by utilizing the EPD technology, these devices can effectively operate at 2.5V while maintaining excellent electrical characteristics. The EPD TVS employs a complex nppn structure in contrast to the pn structure normally found in traditional silicon-avalanche TVS diodes. The EPD mechanism is achieved by engineering the center region of the device such that the reverse biased junction does not avalanche, but will “punch-through” to a conducting state. This structure results in a device with superior DC electrical parameters at low voltages while maintaining the capability to absorb high transient currents. Circuit Board Layout Recommendations for Suppression of ESD. Good circuit board layout is critical for the suppression of ESD induced transients. The following guidelines are recommended: Place the TVS near the input terminals or connectors to restrict transient coupling. Minimize the path length between the TVS and the protected line. Minimize all conductive loops including power and ground loops. The ESD transient return path to ground should be kept as short as possible. Never run critical signals near board edges. Use ground planes whenever possible. © 2009 Semtech Corp. 4 www.semtech.com Device Schematic & Pin Configuration uClamp2511T PROTECTION PRODUCTS Applications Information - Spice Model Spice Model uClamp2511T Spice Parameters Parameter IS BV VJ RS IB V CJO TT M N EG Unit Amp Volt Volt Ohm Amp Farad sec --eV D1 (T VS) 1E-20 2.2 0.7 0.3 1E-3 12E-12 2.541E-9 0.05 1.1 1.11 D2 (T VS) 1E-20 2.2 0.7 0.3 1E-3 12E-12 2.541E-9 0.05 1.1 1.11 © 2009 Semtech Corp. 5 www.semtech.com uClamp2511T PROTECTION PRODUCTS Outline Drawing - SLP1006P2T A D B E DIM A A1 b D E e L R N aaa bbb TOP VIEW A aaa C A1 PIN 1 ID R bxN bbb CAB 2x L e C SEATING PLANE .015 .016 .017 .000 .001 .002 .018 .020 .022 .035 .039 .043 .020 .024 .028 .026 BSC .008 .010 .012 .002 .004 .006 2 .003 .004 DIMENSIONS INCHES MILLIMETERS MIN NOM MAX MIN NOM MAX 0.37 0.40 0.43 0.00 0.03 0.05 0.45 0.50 0.55 0.90 1.00 1.10 0.50 0.60 0.70 0.65 BSC 0.20 0.25 0.30 0.05 0.10 0.15 2 0.08 0.10 BOTTOM VIEW NOTES: 1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). Land Pattern - SLP1006P2T Y (C) G Z X NOTES: DIM C G X Y Z DIMENSIONS INCHES MILLIMETERS (.033) (0.85) .012 0.30 .024 0.60 .022 0.55 .055 1.40 1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). 2. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY. CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR COMPANY'S MANUFACTURING GUIDELINES ARE MET. © 2009 Semtech Corp. 6 www.semtech.com uClamp2511T PROTECTION PRODUCTS Marking Code Ordering Information Part Number Working Voltage 2.5V Qty per Reel 3,000 Reel Size 7 Inch 51 Notes: 1)Marking will also include line matrix date code 2) Device is electrically symmetrical uClamp 2511T.TCT Notes: 1) This is a lead-free, RoHS/WEEE compliant product MicroClamp, uClamp and μClamp are marks of Semtech Corporation Tape and Reel Specification Pin 1 Location User Direction of feed Device Orientation in Tape A0 0.69 +/-0.10 mm B0 1.19 +/-0.10 mm K0 0.66 +/-0.10 mm Tape Width B, (Max) D 1.5 + 0.1 mm - 0.0 mm (0.59 +.005 - .000) D1 E 1.750±.10 mm (.069±.004) F P 4.0±0.10 mm (.157±.004) P0 4.0±0.1 mm (.157±.004) P2 T W 8.0 mm + 0.3 mm - 0.1 mm (.312±.012) 8 mm 4.2 mm (.165) 0.4 mm ±0.25 (.031) 3.5±0.05 mm (.138±.002) 2.0±0.05 mm (.079±.002) 0.254±0.02 mm (.016) Contact Information Semtech Corporation Protection Products Division 200 Flynn Rd., Camarillo, CA 93012 Phone: (805)498-2111 FAX (805)498-3804 www.semtech.com © 2009 Semtech Corp. 7
UCLAMP2511T
1. 物料型号:uClamp2511T。

2. 器件简介: - μClamp®系列瞬态电压抑制器(TVS)旨在替代手机、笔记本电脑和PDA等便携式应用中的多层压敏电阻器(MLV)。 - μClamp2511T采用Semtech专有的EPD工艺技术制造,具有低立压电压、无器件退化等优越电气特性。 - μClamp2511T为2针SLP1006P2T封装,尺寸为1.0 x 0.6 x 0.4mm,引脚间距0.65mm,采用无铅NiPdAu电镀。

3. 引脚分配: - μClamp2511T为2针封装,每个引脚保护一条2.5V工作电压的数据线路,具有双向功能。

4. 参数特性: - 反向立压电压:2.5V。 - 击穿电压:2.7V至3.6V。 - 反向漏电流:0.01A至0.05A。 - 钳位电压:5.5V至8V。 - 钳位电压(5A,8/20us):8V。 - 结电容:6至10皮法。

5. 功能详解: - μClamp2511T可保护单个数据线免受静电放电(ESD)、雷击、电快速瞬变(EFT)和电缆放电事件(CDE)的损害。 - 符合IEC 61000-4-2(ESD)±15kV(空气)、±8kV(接触)标准。 - 超小封装尺寸,适用于便携式应用。

6. 应用信息: - 适用于手机、便携式仪器、键盘、笔记本电脑、MP3播放器等。

7. 封装信息: - SLP1006P2T封装,无铅、无卤素、符合RoHS/WEEE标准。 - 封装尺寸:1.0 x 0.6 x 0.4 mm。 - 引脚镀层:NiPdAu。 - 封装材料阻燃等级:UL 94V-0。
UCLAMP2511T 价格&库存

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UCLAMP2511T.TCT
  •  国内价格
  • 1+1.53364
  • 30+1.48075
  • 100+1.37498
  • 500+1.26922
  • 1000+1.21633

库存:0