UCLAMP3301D

Low Voltage µClampTM for ESD and CDE Protection PROTECTION PROTECTION PRODUCTS - MicroClampTM Description The µClampTM series of Transient Voltage Suppressors (TVS) are designed to replace multilayer varistors (MLVs) in portable applications such as cell phones, notebook computers, and PDAs. They offer superior electrical characteristics such as lower clamping voltage and no device degradation when compared to MLVs. They are are designed to protect sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD), lightning, electrical fast transients (EFT), and cable discharge events (CDE). The µClampTM3301D is constructed using Semtech’s proprietary EPD process technology. The EPD process provides low standoff voltages with significant reductions in leakage currents and capacitance over siliconavalanche diode processes. They feature a true operating voltage of 3.3 volts for superior protection when compared to traditional pn junction devices. The µClamp3301D is in a SOD-323 package and will protect one unidirectional line. They give the designer the flexibility to protect one line in applications where arrays are not practical. They may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (±15kV air, ±8kV contact discharge). uClamp3301D Features 100 Watts peak pulse power (tp = 8/20µs) Transient protection for data lines to IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC 61000-4-4 (EFT) 40A (tp = 5/50ns) IEC 61000-4-5 (Lightning) 10A (tp = 8/20µs) Small package for use in portable electronics Suitable replacement for MLVs in ESD protection applications Protects one line Low clamping voltage Working voltages: 3.3V Low leakage current Solid-state silicon-avalanche technology Mechanical Characteristics EIAJ SOD-323 package Molding compound flammability rating: UL 94V-0 Marking: Marking code, cathode band Packaging: Tape and Reel Lead Finish: Matte tin RoHS/WEEE Compliant Applications Cell Phone Handsets and Accessories Laser Diode Protection Notebooks, Desktops, & Servers Portable Instrumentation Analog Inputs Equivalent Circuit Diagram Schematic & PIN Configuration SOD-323 (Top View) Revision 01/16/2008 1 www.semtech.com uClamp3301D PROTECTION PRODUCTS Absolute Maximum Rating R ating Peak Pulse Power (tp = 8/20µs) Peak Pulse Current (tp = 8/20µs) ESD Voltage (HBM Waveform p er IEC 61000-4-2) Op erating Temp erature Storage Temp erature Symbol Pp k IP P V PP TJ TSTG Value 100 10 30 -55 to +125 -55 to +150 Units Watts A kV °C °C Electrical Characteristics Parameter Reverse Stand-Off Voltage Punch-Through Voltage Snap -Back Voltage Reverse Leakage Current Clamp ing Voltage Clamp ing Voltage Clamp ing Voltage Steering Diode Forward Voltage (Reverse Clamp ing Voltage) Junction Cap acitance Symbol VRWM V PT VSB IR VC VC VC VF Cj IPT = 2µA ISB = 50mA VRWM = 3.3V, T=25°C IPP = 1A, tp = 8/20µs Pi n 1 to 2 IPP = 5A, tp = 8/20µs Pi n 1 to 2 IPP = 10A, tp = 8/20µs Pi n 1 to 2 IPP = 1A, tp = 8/20µs Pi n 2 to 1 VR = 0V, f = 1MHz 3.5 2.8 0.5 4.5 5.5 9.5 1.8 50 Conditions Minimum Typical Maximum 3.3 Units V V V µA V V V V pF  2008 Semtech Corp. 2 www.semtech.com uClamp3301D PROTECTION PRODUCTS Typical Characteristics Non-Repetitive Peak Pulse Power vs. Pulse Time 10 110 100 90 80 70 60 50 40 30 20 10 0 Power Derating Curve Peak Pulse Power - PPP (kW) 1 0.1 0.01 0.1 1 10 Pulse Duration - tp (Ξs) 100 1000 % of Rated Power or PP I 0 25 50 75 100 125 150 Ambient Temperature - TA (oC) Clamping Voltage vs. Peak Pulse Current 10 Reverse Clamping Voltage - Vc (V) 9 8 7 Normalized Capacitance vs. R e v er se Voltage Re Voltage 1.2 1 CJ(VR) / CJ(VR=0) 0.8 0.6 0.4 0.2 6 5 4 3 2 1 0 0 2 4 6 8 10 12 Waveform Parameters: tr = 8µs td = 20µs f = 1 MHz 0 0 0.5 1 1.5 2 Reverse Voltage - VR (V) 2.5 3 Peak Pulse Current - Ipp (A) Insertion Loss S21 CH1 S21 LOG 6 dB / REF 0 dB START . 030 MHz STOP 3000. 000000 MHz  2008 Semtech Corp. 3 www.semtech.com uClamp3301D PROTECTION PRODUCTS Applications Information Device Connection Options The µClamp3301D is designed to protect one I/O, or power supply line. It will present a high impedance to the protected line up to 3.3 volts. It will “turn on” when the line voltage exceeds 3.5 volts. The device is unidirectional and may be used on lines where the signal polarity is above ground. The cathode band should be placed towards the line that is to be protected. Due to the “snap-back” characteristics of the low voltage TVS, it is not recommended that the I/O line be directly connected to a DC source greater than snapback votlage (VSB) as the device can latch on as described below. EPD TVS Characteristics The µClamp3301D is constructed using Semtech’s proprietary EPD technology. The structure of the EPD TVS is vastly different from the traditional pn-junction devices. At voltages below 5V, high leakage current and junction capacitance render conventional avalanche technology impractical for most applications. However, by utilizing the EPD technology, the µClamp3301D can effectively operate at 3.3V while maintaining excellent electrical characteristics. The EPD TVS employs a complex nppn structure in contrast to the pn structure normally found in traditional silicon-avalanche TVS diodes. Since the EPD TVS devices use a 4-layer structure, they exhibit a slightly different IV characteristic curve when compared to conventional devices. During normal operation, the device represents a high-impedance to the circuit up to the device working voltage (VRWM). During an ESD event, the device will begin to conduct and will enter a low impedance state when the punch through voltage (VPT) is exceeded. Unlike a conventional device, the low voltage TVS will exhibit a slight negative resistance characteristic as it conducts current. This characteristic aids in lowering the clamping voltage of the device, but must be considered in applications where DC voltages are present. When the TVS is conducting current, it will exhibit a slight “snap-back” or negative resistance characteristics due to its structures. This point is defined on the curve by the snap-back voltage (VSB) and snap-back  2008 Semtech Corp. 4 Device Schematic & Pin Configuration EPD TVS IV Characteristic Curve IPP ISB IPT VF IR VRWM VSB V VC PT IF current (ISB). To return to a non-conducting state, the current through the device must fall below the ISB (approximately