UCLAMP3301P

Low Voltage μClampTM for ESD and CDE Protection PROTECTION PROTECTION PRODUCTS - MicroClampTM Description The μClamp series of Transient Voltage Suppressors (TVS) are designed to replace multilayer varistors (MLVs) in portable applications such as cell phones, notebook computers, and PDAs. They offer superior electrical characteristics such as lower clamping voltage and no device degradation when compared to MLVs. They are designed to protect sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD), lightning, electrical fast transients (EFT), and cable discharge events (CDE). The μClampTM3301P is constructed using Semtech’s proprietary EPD process technology. The EPD process provides low standoff voltages with significant reductions in leakage currents and capacitance over siliconavalanche diode processes. They feature a true operating voltage of 3.3 volts for superior protection when compared to traditional pn junction devices. The μClampTM3301P is in an 2-pin, RoHS/WEEE compliant, SLP1006P2 package. It measures 1.0 x 0.6 x 0.5mm. The leads are spaced at a pitch of 0.65mm and are finished with lead-free NiPdAu. Each device will protect one line operating at 3.3 volts. It gives the designer the flexibility to protect single lines in applications where arrays are not practical. They may be used to meet the ESD immunity requirements of IEC 610004-2, Level 4 (±15kV air, ±8kV contact discharge). The combination of small size and high ESD surge capability makes them ideal for use in portable applications such as cellular phones, digital cameras, and MP3 players. TM uClamp3301P Features Transient protection for data lines to IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC 61000-4-4 (EFT) 40A (tp = 5/50ns) Cable Discharge Event (CDE) Ultra-small package (1.0 x 0.6 x 0.5mm) Protects one data line Low clamping voltage Working voltage: 3.3V Low leakage current Solid-state silicon-avalanche technology Mechanical Characteristics SLP1006P2 package RoHS/WEEE Compliant Nominal Dimensions: 1.0 x 0.6 x 0.5 mm Lead Finish: NiPdAu Molding compound flammability rating: UL 94V-0 Marking: Marking code, cathode band Packaging: Tape and Reel Applications Cellular Handsets & Accessories Personal Digital Assistants (PDAs) Notebooks & Handhelds Portable Instrumentation Digital Cameras Peripherals MP3 Players Dimensions 1.0 0.60 0.65 Schematic & PIN Configuration 2 0.50 1 SLP1006P2 (Bottom View) 1 www.semtech.com Maximum Dimensions (mm) Revision 2/15/2008 uClamp3301P PROTECTION PRODUCTS Absolute Maximum Rating R ating Peak Pulse Power (tp = 8/20μs) Maximum Peak Pulse Current (tp = 8/20μs) ESD p er IEC 61000-4-2 (Air) ESD p er IEC 61000-4-2 (Contact) Op erating Temp erature Storage Temp erature Symbol Pp k Ip p VESD TJ TSTG Value 40 5 +/- 20 +/- 15 -40 to +85 -55 to +150 Units Watts Amps kV °C °C Electrical Characteristics (T=25oC) Parameter Reverse Stand-Off Voltage Punch-Through Voltage Snap -Back Voltage Reverse Leakage Current Clamp ing Voltage Clamp ing Voltage Reverse Clamp ing Voltage Junction Cap acitance Symbol VRWM V PT VSB IR VC VC VCR Cj IPT = 2μA ISB = 50mA VRWM = 3.3V IPP = 1A, tp = 8/20μs IPP = 5A, tp = 8/20μs IPP = 1A, tp = 8/20μs I/O p in to Gnd VR = 0V, f = 1MHz I/O p in to Gnd VR = 3.3V, f = 1MHz 25 3.5 2.8 0.05 0.5 5.5 8.0 2.4 30 3.9 Conditions Minimum Typical Maximum 3.3 4.6 Units V V V μA V V V pF 14 pF © 2008 Semtech Corp. 2 www.semtech.com uClamp3301P PROTECTION PRODUCTS Typical Characteristics Non-Repetitive Peak Pulse Power vs. Pulse Time 1 110 100 90 % of Rated Power or I PP 80 70 60 50 40 30 20 10 0 Power Derating Curve Peak Pulse Power - P PP (kW) 0.1 0.01 0.1 1 10 Pulse Duration - tp (µs) 100 1000 0 25 50 75 100 125 150 Ambient Temperature - TA (oC) Clamping Voltage vs. Peak Pulse Current 12 10 8 6 4 2 0 0 1 2 3 4 5 Waveform Parameters: tr = 8μs td = 20μs Normalized Junction Capacitance vs. Reverse Voltage 1.2 f = 1 MHz 1 Cj(VR) / Cj(VR=0V) 0.8 0.6 0.4 0.2 0 0 0.5 1 1.5 2 2.5 Reverse Voltage - VR (V) 3 3.5 Clamping Voltage - VC (V) Peak Pulse Current - IPP (A) Insertion Loss S21 CH1 S21 LOG 6 dB / REF 0 dB 1: -9.2069 dB 900 MHz 2: -12.958 dB 1.8 GHz 3: -11.689 dB 2.5 GHz 0 dB -6 dB -12 dB -18 dB -24 dB -30 dB -36 dB 1 MHz START . 030 MHz 10 MHz 100 MHz 3 1 GHz GHz STOP 3000. 000000 M Hz 1 3 2 4 ESD Clamping (8kV Contact per IEC 61000-4-2) 4: -3.0358 dB 227MHz Note: Data is taken with a 10x attenuator 3 www.semtech.com © 2008 Semtech Corp. uClamp3301P PROTECTION PRODUCTS Applications Information Device Connection Options The μClamp3301P is designed to protect one data or I/O line operating at 3.3 volts. It will present a high impedance to the protected line up to 3.3 volts. It will “turn on” when the line voltage exceeds 3.5 volts. The device is unidirectional and may be used on lines where the signal polarity is above ground. The cathode band should be placed towards the line that is to be protected. These devices should not be connected to DC supply rails as they can latch up as described below. Due to the “snap-back” characteristics of the low voltage TVS, it is not recommended that the I/O line be directly connected to a DC source greater than snapback votlage (VSB) as the device can latch on as described below. EPD TVS Characteristics The μClamp3301P is constructed using Semtech’s proprietary EPD technology. The structure of the EPD TVS is vastly different from the traditional pn-junction devices. At voltages below 5V, high leakage current and junction capacitance render conventional avalanche technology impractical for most applications. However, by utilizing the EPD technology, the μClamp3301P can effectively operate at 3.3V while maintaining excellent electrical characteristics. The EPD TVS employs a complex nppn structure in contrast to the pn structure normally found in traditional silicon-avalanche TVS diodes. Since the EPD TVS devices use a 4-layer structure, they exhibit a slightly different IV characteristic curve when compared to conventional devices. During normal operation, the device represents a high-impedance to the circuit up to the device working voltage (VRWM). During an ESD event, the device will begin to conduct and will enter a low impedance state when the punch through voltage (VPT) is exceeded. Unlike a conventional device, the low voltage TVS will exhibit a slight negative resistance characteristic as it conducts current. This characteristic aids in lowering the clamping voltage of the device, but must be considered in applications where DC voltages are present. When the TVS is conducting current, it will exhibit a slight “snap-back” or negative resistance characteris© 2008 Semtech Corp. 4 IPP Device Schematic & Pin Configuration Pin 2 Pin 1 EPD TVS IV Characteristic Curve ISB IPT VF IR VRWM V V VC PT SB IF tics due to its structures. This point is defined on the curve by the snap-back voltage (VSB) and snap-back current (ISB). To return to a non-conducting state, the current through the device must fall below the ISB (approximately