UCLAMP3305P.TCT

Low Voltage TVS for ESD Protection PROTECTION PROTECTION PRODUCTS - MicroClampTM Description The μClamp series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD, lightning, and other voltage-induced transient events. Each device will protect up to four lines operating at 3.3 volts. TM uClamp3305P Features Transient protection for data lines to IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC 61000-4-4 (EFT) 40A (tp = 5/50ns) Small package for use in portable electronics Protects five I/O lines Working voltage: 3.3V Low leakage current Low operating and clamping voltages Solid-state silicon-avalanche technology The μClampTM3305P is a solid-state device designed specifically for transient suppression. It is constructed using Semtech’s proprietary EPD process technology. The EPD process provides low standoff voltages with significant reductions in leakage currents and capacitance over traditional pn junction processes. They offer desirable characteristics for board level protection including fast response time, low clamping voltage and no device degradation. The μClamp3305P may be used to meet the immunity requirements of IEC 61000-4-2, level 4 (±15kV air, ±8kV contact discharge). It is packaged in an ultra small SLP1616P6 package with a low profile of only 0.58mm. The leads are spaced at a pitch of 0.5mm and are finished with lead-free NiPdAu. The small package makes it ideal for use in portable electronics such as cell phones, digital still cameras, and notebook computers. Mechanical Characteristics SLP1616P6 package RoHS/WEEE Compliant Nominal Dimensions: 1.6 x 1.6 x 0.58 mm Lead Pitch: 0.5mm Lead Finish: NiPdAu Marking : Orientation Mark and Marking Code Packaging : Tape and Reel Applications Cellular handsets and accessories Notebooks and handhelds MP3 Players Digital cameras Portable instrumentation PDA’s Circuit Diagram 1 3 4 5 6 Package 1.6 1 1.6 6 0.5 0.6 Center Tab (GND) Device Schematic Revision 02/15/2008 6 Pin SLP package (Bottom Side View) 1.6 x 1.6 x 0.58mm (Nominal) 1 www.semtech.com uClamp3305P PROTECTION PRODUCTS Absolute Maximum Rating R ating Peak Pulse Power (tp = 8/20μs) Maximum Peak Pulse Current (tp = 8/20μs) ESD p er IEC 61000-4-2 (Air) ESD p er IEC 61000-4-2 (Contact) Op erating Temp erature Storage Temp erature Symbol Pp k Ip p V PP TJ TSTG Value 40 5 +/- 20 +/- 15 -55 to +125 -55 to +150 Units Watts Amps kV °C °C Electrical Characteristics (T=25oC) Parameter Reverse Stand-Off Voltage Punch-Through Voltage Snap -Back Voltage Reverse Leakage Current Clamp ing Voltage Clamp ing Voltage Reverse Clamp ing Voltage Symbo l VRWM V PT VSB IR VC VC VCR IPT = 2μA ISB = 50mA VRWM = 3.3V IPP = 1A, tp = 8/20μs Any I/O to Gnd IPP = 5A, tp = 8/20μs Any I/O to Gnd IPP = 1A, tp = 8/20μs Any I/O to Gnd I/O p in to Gnd VR = 0V, f = 1MHz I/O p in to Gnd VR = 3.3V, f = 1MHz I/O p in to I/O p in VR = 0V, f = 1MHz I/O p in to I/O p i n VR = 3.3V, f = 1MHz 20 3.5 2.8 0.05 0.5 5.5 8.0 2.4 25 3.9 Conditions Minimum Typical Maximum 3.3 4.6 Units V V V μA V V V pF Junction Cap acitance Cj 12 10 7.5 12.5 pF pF pF © 2008 Semtech Corp. 2 www.semtech.com uClamp3305P PROTECTION PRODUCTS Typical Characteristics Non-Repetitive Peak Pulse Power vs. Pulse Time 1 110 100 90 % of Rated Power or I PP 80 70 60 50 40 30 20 10 0 Power Derating Curve Peak Pulse Power - P PP (kW) 0.1 0.01 0.1 1 10 Pulse Duration - tp (µs) 100 1000 0 25 50 75 100 125 150 Ambient Temperature - TA (oC) Clamping Voltage vs. Peak Pulse Current 10 Forward Voltage vs. Forward Current 8 7 Clamping Voltage - VC (V) 8 Forward Voltage - VF (V) 6 5 4 3 2 1 0 Waveform Parameters: tr = 8μs td = 20μs 6 4 Waveform Parameters: tr = 8μs td = 20μs 0 1 2 3 4 Peak Pulse Current - IPP (A) 5 6 2 0 0 1 2 3 4 Forward Current - IF (A) 5 6 Normalized Capacitance vs. Reverse Voltage 1.2 f = 1 MHz ESD Clamping (8kV Contact per IEC 61000-4-2) 1 0.8 0.6 0.4 0.2 0 0 0.5 1 Line-Line CJ(VR) / CJ(VR=0) Line-Ground 1.5 2 2.5 Reverse Voltage - VR (V) 3 3.5 © 2008 Semtech Corp. 3 www.semtech.com uClamp3305P PROTECTION PRODUCTS Insertion Loss S21 - LtoL (I/O to I/O) CH1 S21 LOG 6 dB / REF 0 dB 1: -3.0041 dB 532 MHz 2: -4.0655 dB 900 MHz 3: -6.1405dB 1.8 GHz 0 dB -6 dB -12 dB -18 dB -24 dB -30 dB -36 dB 1 MHz START . 030 MHz 10 MHz 100 MHz 3 1 GHz GHz STOP 3000. 000000 MHz 1 Insertion Loss S21 -LtoG (I/O to Pin 2) CH1 S21 LOG 6 dB / REF 0 dB 1: -3.0155 dB 260 MHz 2: -7.4637 dB 900 MHz 3: -9.2053dB 1.8 GHz 0 dB -6 dB 2 1 4: -8.0944 dB 2.5 GHz 2 3 4 4: -9.9280 dB 2.5 GHz -12 dB -18 dB -24 dB -30 dB -36 dB 1 MHz START . 030 M Hz 10 MHz 100 MHz 3 4 3 1 GHz GHz STOP 3000. 000000 M Hz Crosstalk S21 (I/O to Pin 4) CH1 S21 LOG 20 dB / EF 0 dB R START . 030 M Hz STOP 3000. 000000 M Hz © 2008 Semtech Corp. 4 www.semtech.com uClamp3305P PROTECTION PRODUCTS Applications Information Device Connection Options The μClamp3305P is designed to protect 5 signal lines with an operating voltage of 0 to 3.3V. It will present a high impedance to the protected line up to 3.3 volts. It will “turn on” when the line voltage exceeds 3.5 volts. The device is unidirectional and may be used on lines where the signal polarity is above ground. Pin 1,3,4,5,6 are connected to I/O signals. The center tab is connected to system ground. Pin 2 should be left open or not connected. All signal lines and ground should be made with the lowest impedance and inductance path as possible. This will improve signal quality of the lines and keep the clamping voltage as low as possible during a fast transient. Due to the “snap-back” characteristics of the low voltage TVS, it is not recommended that the I/O line be directly connected to a DC source greater than snapback votlage (VSB) as the device can latch on. EPD TVS Characteristics These devices are constructed using Semtech’s proprietary EPD technology. The structure of the EPD TVS is vastly different from the traditional pn-junction devices. At voltages below 5V, high leakage current and junction capacitance render conventional avalanche technology impractical for most applications. However, by utilizing the EPD technology, these devices can effectively operate at 3.3V while maintaining excellent electrical characteristics. The EPD TVS employs a complex nppn structure in contrast to the pn structure normally found in traditional silicon-avalanche TVS diodes. The EPD mechanism is achieved by engineering the center region of the device such that the reverse biased junction does not avalanche, but will “punch-through” to a conducting state. This structure results in a device with superior DC electrical parameters at low voltages while maintaining the capability to absorb high transient currents. Figure 1 - Circuit Diagram 1 3 4 5 6 Center Tab (GND) Figure 2 - Layout Example Figure 3 - EPD TVS IV Characteristic Curve IPP ISB IPT VF IR VRWM V VPT VC SB IF © 2008 Semtech Corp. 5 www.semtech.com Low Voltage TVS for ESD Protection PROTECTION PROTECTION PRODUCTS - MicroClampTM Applications Information - Spice Model uClamp3305P I/O Figure 3 - μClamp3305P Spice Model μClamp3305P Spice Parameters Parameter IS BV VJ RS IBV CJO TT M N EG Unit Amp Volt Volt O hm Amp Farad sec --eV D1 (T VS) 2E-12 20 0.57 1.444 1.0 E-3 2 0 E -1 2 2.541E-9 0 .2 3 6 1.1 1.11 6 www.semtech.com uClamp3305P PROTECTION PRODUCTS Outline Drawing - SLP1616P6 A D B PIN 1 INDICATOR (LASER MARK) E DIM A A1 A2 b D D1 E E1 e L N aaa bbb A aaa C A2 D1 12 LxN E1 N bxN e D/2 bbb E/2 A1 C SEATING PLANE .020 .023 .026 0.00 .001 .002 (.005) .008 .010 .012 .059 .063 .067 .041 .047 .051 .059 .063 .067 .010 .016 .020 .020 BSC .010 .013 .016 6 .003 .004 DIMENSIONS INCHES MILLIMETERS MIN NOM MAX MIN NOM MAX 0.50 0.58 0.65 0.00 0.03 0.05 (0.13) 0.20 0.25 0.30 1.50 1.60 1.70 1.05 1.20 1.30 1.50 1.60 1.70 0.25 0.40 0.50 0.50 BSC 0.25 0.33 0.40 6 0.08 0.10 CAB NOTES: 1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). 2. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. Land Pattern - SLP1616P6 P X DIMENSIONS DIM C G H K P X Y Z INCHES .060 .035 .018 .051 .020 .012 .025 .085 MILLIMETERS 1.52 0.89 0.45 1.30 0.50 0.30 0.63 2.15 Z G H (C) Y K NOTES: 1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). 2. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY. CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR COMPANY'S MANUFACTURING GUIDELINES ARE MET. 3. THERMAL VIAS IN THE LAND PATTERN OF THE EXPOSED PAD SHALL BE CONNECTED TO A SYSTEM GROUND PLANE. FAILURE TO DO SO MAY COMPROMISE THE THERMAL AND/OR FUNCTIONAL PERFORMANCE OF THE DEVICE. © 2008 Semtech Corp. 7 www.semtech.com uClamp3305P PROTECTION PRODUCTS Marking Ordering Information Part Number Working Voltage 3.3V Lead Finish Pb Free Qty per Reel 3,000 Reel Size 7 Inch 3305P YW Y = year W = Week uClamp3305P.TCT MicroClamp, uClamp and μClamp are marks of Semtech Corporation Tape and Reel Specification Device Orientation in Tape (Pin 1 upper left towards sprocket holes) A0 1.78 +/-0.10 mm Tape Width B0 1.78 +/-0.10 mm K0 0.69 +/-0.10 mm K (MAX) B, (Max) D 1.5 + 0.1 mm - 0.0 mm (0.59 +.005 - .000) D1 E 1.750±.10 mm (.069±.004) F P 4.0±0.1 mm (.157±.004) P0 4.0±0.1 mm (.157±.004) P2 T(MAX) W 8.0 mm + 0.3 mm - 0.1 mm (.312±.012) 8 mm 4.2 mm (.165) 0.8 mm ±0.05 (.031) 3.5±0.05 mm (.138±.002) 2.4 mm (.094) 2.0±0.05mm (.079±.002) 0.4 mm (.016) Contact Information Semtech Corporation Protection Products Division 200 Flynn Rd., Camarillo, CA 93012 Phone: (805)498-2111 FAX (805)498-3804 © 2008 Semtech Corp. 8 www.semtech.com