1N-SS119

1N-SS119 SILICON EPITAXIAL PLANAR DIODE for High Speed Switching Max. 0.45 Features • Low capacitance • Short reverse recovery time Max. 1.9 Min. 27.5 Black Cathode Band Black Part No. XXX Max. 2.9 Min. 27.5 Glass Case DO-34 Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage Reverse Voltage Average Rectified Current Peak Forward Current Non-Repetitive Peak Forward Surge Current (t = 1 s) Power Dissipation Junction Temperature Storage Temperature Range Symbol VRM VR IO IFM IFSM Pd Tj TS Value 35 30 150 450 1 250 175 - 65 to + 175 Unit V V mA mA A mW O C C O Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 10 mA Reverse Current at VR = 30 V Capacitance at VR = 1 V, f = 1 MHz Reverse Recovery Time at IF = 10 mA VR = 6 V,RL = 50 Ω Symbol VF IR C trr Max. 0.8 0.1 3 3.5 Unit V µA pF ns SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 23/06/2007 1N-SS119 Fig.1-Forward current Vs. Forward voltage 10 -1 Fig.2- Reverse current Vs. Reverse voltage 10 -4 10 -5 Forward current I F (A) Reverse current I R (A) Ta=125 oC 10 -2 Ta=1 o 25 C T a= o 75 C Ta=25 o C 10-6 Ta=75 C o Ta=-2 o 5C 10 -7 10 -3 10 -8 Ta=25 C o 10 -4 0 0.2 0.4 0.6 0.8 1.0 1.2 10 -9 0 10 20 30 40 50 Forward votlage V F (V) Reverse voltage V R (V) Fig.3- Capacitance Vs. Reverse voltage f=1MHz 10 Capacitance C (pF) 1.0 0.1 1.0 10 Reverse voltage V R (V) 100 SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 23/06/2007