1N4148

1N4148 SILICON EPITAXIAL PLANAR DIODE Fast Switching Diode This diode is also available in MiniMELF case with the type designation LL4148 Max. 0.5 Max. 0.45 Max. 1.9 Min. 27.5 Max. 1.9 Min. 27.5 Black Cathode Band Black Part No. Black "ST" Brand Black Cathode Band XXX ST Max. 3.9 Black Part No. XXX Max. 2.9 Min. 27.5 Min. 27.5 Glass Case DO-35 Dimensions in mm Glass Case DO-34 Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Forward Surge Current at t = 1 s at t = 1 ms at t = 1 µs Symbol VRM VR IF(AV) IFSM Ptot Tj TS Value 100 75 200 0.5 1 4 500 1) Unit V V mA A mW O Power Dissipation Junction Temperature Storage Temperature Range 1) 200 - 65 to + 200 C C O Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature. SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 15/09/2007 1N4148 Characteristics at Tj = 25 OC Parameter Forward Voltage at IF = 10 mA Leakage Current at VR = 20 V at VR = 75 V at VR = 20 V, Tj = 150 OC Reverse Breakdown Voltage at IR = 100 µA at IR = 5 µA Capacitance at VF = VR = 0 Voltage Rise when Switching ON tested with 50 mA Forward Pulses tp = 0.1 s, Rise Time < 30 ns, fp = 5 to 100 KHz Reverse Recovery Time from IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Ω Thermal Resistance Junction to Ambient Air Rectification Efficiency at f = 100 MHz, VRF = 2 V 1) Symbol VF Min. - Max. 1 Unit V IR IR IR V(BR)R V(BR)R Ctot Vfr trr RthA ηV 100 75 - 25 5 50 4 nA µA µA V V pF - 2.5 V 0.45 4 0.35 1) - ns K/mW - Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature. VRF =2V 2nF 60 5K ~ ~ ~ Rectification Efficiency Measurement Circuit SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 15/09/2007 Vo 1N4148 Forward characteristics mA 10 3 Dynamic forward resistance versus forward current 1N 4148 1N 4148 10 4 5 2 Tj=25 oC f=1KHz 10 2 iF 10 o Tj=100 C o Tj=25 C 10 3 rf 5 2 10 2 1 5 2 10 -1 10 5 2 10 -2 0 1 VF 2V 1 10 -2 10 -1 1 10 IF 10 2 mA Admissible power dissipation versus ambient temperature Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature Relative capacitance versus reverse voltage mW 1000 900 800 700 600 500 400 300 200 100 0 0 100 1N 4148 1N 4148 Tj=25 oC f=1MHz 1.1 Ctot(VR ) Ctot(0V) 1.0 P tot 0.9 0.8 0.7 200 oC Tamb 0 0 2 4 6 VR 8 10 V SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 15/09/2007 1N4148 Leakage current versus junction temperature nA 10 4 5 2 1N 4148 10 3 IR 5 2 10 2 5 2 10 5 VR=20V 2 1 0 100 Tj 200 C o Admissible repetitive peak forward current versus pulse duration A 100 5 4 3 2 Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature 1N 4148 I v=tp/T T=1/fp IFRM tp 10 IFRM v=0 5 4 3 2 t T 0.1 0.2 0.5 1 5 4 3 2 0.1 10 -5 2 5 10 -4 2 5 10 -3 2 5 10 -2 2 5 10 -1 2 5 1 2 5 10 s tp SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 15/09/2007