1N4148M

1N4148M SILICON EPITAXIAL PLANAR DIODE Fast switching diode Max. 0.45 Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. XXX Max. 2.9 Min. 27.5 Glass Case DO-34 Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Peak Reverse Voltage Rectified Current (Average), Half Wave Rectification with Resist. Load at f ≥ 50 Hz Surge Forward Current at t < 1 s Power Dissipation Junction Temperature Storage Temperature Range 1) Symbol VR VRM IO IFSM Ptot Tj TS Value 50 60 130 500 400 1) Unit V V mA mA mW O 200 - 65 to + 200 C C O Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature. Characteristics at Tj = 25 OC Parameter Forward Voltage at IF = 100 mA Reverse Leakage Current at VR = 50 V Reverse Breakdown Voltage tested with 100 µA Pulses Capacitance at VF = VR = 0 Reverse Recovery Time from IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Ω Symbol VF IR V(BR)R Ctot trr Min. 60 Max. 1.1 0.5 3 4 Unit V μA V pF ns SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 23/06/2007 1N4148M Forward characteristics Dynamic forward resistance versus forward current 1N 4148M 1N 4148M 10 4 5 2 Tj=25 oC f=1KHz 10 3 10 2 iF 10 o Tj=100 C o Tj=25 C 10 3 rf 5 2 10 2 1 5 2 10 -1 10 5 2 10 -2 0 1 VF 2V 1 10 -2 10 -1 1 10 IF 10 2 mA Admissible power dissipation versus ambient temperature Valid provided that electrodes are kept at ambient temperature Relative capacitance versus reverse voltage mW 1000 900 800 700 600 500 400 300 200 100 0 0 100 1N 4148M 1N 4148M Tj=25 oC f=1MHz 1.1 Ctot(VR ) Ctot(0V) 1.0 P tot 0.9 0.8 0.7 200 oC Tamb 0 0 2 4 6 VR 8 10 V SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 23/06/2007