1N4149

1N4149...1N4454 SILICON EPITAXIAL PLANAR DIODES for general purpose and switching Max. 0.5 Max. 0.45 Max. 1.9 Min. 27.5 Max. 1.9 Min. 27.5 Black Cathode Band Black Part No. Black "ST" Brand Black Cathode Band XXX ST Max. 3.9 Black Part No. XXX Max. 2.9 Min. 27.5 Min. 27.5 Glass Case DO-35 Dimensions in mm Glass Case DO-34 Dimensions in mm Absolute Maximum Ratings and Characteristics (Ta = 25 OC unless otherwise specified.) Peak Reverse Voltage VRM (V) 1N4149 1N4151 1N4152 1N4154 1N4447 1N4449 1N4450 1N4451 1N4453 1N4454 1) 2) 1) 1) Type Max. Average Rectified Current IO (mA) 150 150 150 150 150 150 150 150 150 150 2) Max. Max. Power Dissipation Junction Temp. at 25 OC Ptot (mW) 500 500 400 500 500 500 400 400 400 400 2) Max. Forward Voltage VF (V) 1 1 0.55 1 1 1 0.54 0.5 0.55 1 at IF (mA) 10 50 0.1 30 20 30 0.5 0.1 0.01 10 Max. Reverse Current IR (nA) 25 50 50 100 25 25 50 50 50 100 at VR (V) 20 50 30 25 20 20 30 30 20 50 Max. Reverse Recovery Time Tj (OC) 200 200 175 200 200 200 175 175 175 175 trr (ns) 4 2 2 2 4 4 4 10 4 Conditions IF = 10 mA, VR = 6 V, RL = 100 Ω, to IR = 1 mA IF = 10 mA, VR = 6 V, RL = 100 Ω, to IR = 1 mA IF = 10 mA, VR = 6 V, RL = 100 Ω, to IR = 1 mA IF = 10 mA, VR = 6V, RL = 100 Ω, to IR = 1 mA IF = 10 mA, VR = 6 V, RL = 100 Ω, to IR = 1 mA IF = 10 mA, VR = 6 V, RL = 100 Ω, to IR = 1 mA IF = IR = 10 mA , to IR = 1 mA IF = IR = 10 mA , to IR = 1 mA IF = IR = 10 mA , to IR = 1 mA 100 75 40 35 100 100 40 40 30 75 1) These diodes are also available in glass case DO-34. Parameter for diodes in case DO-34: Ptot = 300 mW, Tj = 175 OC Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature. SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/06/2007