1N4532

1N4531, 1N4532 SILICON EPITAXIAL PLANAR DIODES Fast Switching Diode Max. 0.45 Max. 1.9 Min. 27.5 Black Cathode Band Black Part No. XXX Max. 2.9 Min. 27.5 Glass Case DO-34 Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Repetitive Peak Reverse Voltage Continuous Reverse Voltage Continuous Forward Current Repetitive Peak Forward Current Non-repetitive Peak Forward Current at t = 1 µs at t = 1 ms at t = 1 s Symbol VRRM VR IF IFRM IFSM Ptot Tj TS Value 75 75 200 450 4 1 0.5 500 200 - 65 to + 200 Unit V V mA mA A mW O Power Dissipation Junction Temperature Storage Temperature Range C C O Characteristics at Tj = 25 OC Parameter Forward Voltage at IF = 10 mA Reverse Current at VR = 20 V at VR = 50 V at VR = 20 V, Tj = 150 OC at VR = 50 V, Tj = 150 OC Diode Capacitance at f = 1 MHz Reverse Recovery Time at IF = 10 mA, IR = 60 mA, RL = 100 Ω at IF = 10 mA, IR = 10 mA, RL = 100 Ω Forward Recovery Voltage at IF = 100 mA, tr ≤ 30 ns Thermal Resistance from Junction to Ambient 1N4531 1N4532 1N4531 1N4532 1N4531 1N4532 1N4531 1N4532 1N4532 Symbol VF IR IR IR IR Cd Cd trr trr trr Vfr Max. 1 25 100 50 100 4 2 4 2 4 3 350 Unit V nA nA µA µA pF pF ns ns ns V K/W RthJA SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 23/06/2007