1N5817

1N5817 THRU 1N5819 SCHOTTKY BARRIER RECTIFIERS Features • Metal silicon junction, majority carrier conduction • Guarding for overvoltage protection • Low power loss, high efficiency • High current capability • low forward voltage drop • High surge capability • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Mechanical Data • Case: Molded plastic, DO-41 Dimensions in mm Maximum Ratings and Electrical Characteristics Ratings at 25 OC ambient temperature unless otherwise specified. Parameter Maximum Repetitive Peak Reverse Voltage Maximum RMS voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current 0.375" (9.5 mm) Lead Length at TL = 90 OC Peak Forward Surge Current, 8.3ms Single Half Sine-wave Superimposed On Rated Load (JEDEC method) at TL = 70 OC Maximum Instantaneous Forward Voltage at 1 A Maximum Instantaneous Forward Voltage at 3.1 A Maximum Instantaneous Reverse Current at Rated DC Reverse Voltage Typical Thermal Resistance Typical Junction Capacitance Storage and Operating Junction Temperature Range TA = 25 OC TA = 100 OC Symbols VRRM VRMS VDC I(AV) IFSM VF IR RθJA RθJL CJ Tj ,Tstg 0.45 0.75 1N5817 20 14 20 1N5818 30 21 30 1 25 0.55 0.875 1 10 50 15 110 - 65 to + 125 O 1N5819 40 28 40 Units V V V A A 0.6 0.9 V mA C/W pF O C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 11/11/2008 1N5817 THRU 1N5819 FIG.1-FORWARD CURRENT DERATING CURVE Fig.2- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT AMPERES AVERAGE FORWARD CURRENT AMPERES 30 25 20 15 10 5 0 1 10 NUMBER OF CYCLES AT 60 Hz 100 TJ =TJ m ax. 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 1 0.75 0.5 0.25 0 0 20 40 60 RESISTIVE OR INDUCTIVE LOAD 0.375" (9.5mm) LEAD LENGTH 80 o 100 120 140 LEAD TEMPERATURE, ( C) Fig.4- TYPICAL REVERSE CHARACTERISTICS Fig.3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 100 INSTANTANEOUS FORWARD CURRENT AMPERES INSTANTANEOUS REVERSE CURRENT, MILLIAMPERES 50 10 Tj=125 C Pulse Width=300 S 1% Duty Cycle 1 o 10 1 TJ =125 oC Tj=25 C 0.1 o 0 TJ =75 C o 0.01 TJ =25 C 0.001 0 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE,% o 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 INSTANTANEOUS FORWARD VOLTAGE VOLTS Fig.5- TYPICAL JUNCTION CAPACITANCE TRANSIENT THERMAL IMPEDANCE, C/W JUNCTION CAPACITANCE,pF Fig.6- TYPICAL TRANSIENT THERMAL IMPEDANCE 100 o 400 Tj=25 C f=1.0MHz Vsig=50mVp-p o 100 10 1 10 0.1 1 10 100 0.1 0.01 0.1 1 10 100 REVERSE VOLTAGE, VOLTS t, PULSE DURATION,sec. SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 11/11/2008