1N5818WB

1N5818WB

  • 厂商:

    SEMTECH_ELEC

  • 封装:

  • 描述:

    1N5818WB - 1 A SURFACE MOUNT SCHOTTKY BARRIER DIODE - SEMTECH ELECTRONICS LTD.

  • 详情介绍
  • 数据手册
  • 价格&库存
1N5818WB 数据手册
1N5817WB-1N5819WB 1 A SURFACE MOUNT SCHOTTKY BARRIER DIODE PINNING PIN 1 2 DESCRIPTION Cathode Anode 2 1 Top View Marking Code: 1N5817WB: A0 1N5818WB: ME 1N5819WB: SR Simplified outline SOD-123 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Average Forward Rectified Current Non-Repetitive Peak Forward Surge Current (8.3 ms Single Half Sine-Wave) Power Dissipation Operating Temperature Range Storage Temperature Range 1N5817WB 1N5818WB 1N5819WB Symbol VR IO IFSM Ptot Tj TS Value 20 30 40 1 25 450 - 55 to + 150 - 55 to + 150 Unit V A A mW O C C O Characteristics at Ta = 25 OC Parameter Reverse Breakdown Voltage at IR = 1 mA 1N5817WB 1N5818WB 1N5819WB 1N5817WB 1N5818WB 1N5819WB 1N5819WB 1N5819WB 1N5819WB 1N5817WB 1N5818WB 1N5819WB 1N5817WB 1N5818WB 1N5819WB CD Symbol VBR Min. 20 30 40 Max. 1 1 1 0.05 0.075 0.45 0.45 0.55 0.6 0.75 0.875 0.9 120 pF Unit V Reverse Voltage Leakage Current at VR = 20 V at VR = 30 V at VR = 40 V at VR = 4 V at VR = 6 V Forward Voltage at IF = 0.1 A at IF = 1 A IR mA VF V at IF = 3 A Diode Capacitance at VR = 4 V, f = 1 MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/12/2006 1N5817WB-1N5819WB PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-123 ∠ ALL ROUND c HE D A E bp A UNIT mm A 1.15 1.05 bp 0.6 0.5 c 0.135 0.127 D 2.7 2.6 E 1.65 1.55 HE 3.9 3.7 v 0.2 ∠ 5 O SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/12/2006
1N5818WB
1. 物料型号: - 1N5817WB、1N5818WB和1N5819WB是表面贴装肖特基势垒二极管的型号。

2. 器件简介: - 这些器件是1A表面贴装肖特基势垒二极管,具有不同的反向电压额定值。

3. 引脚分配: - 引脚描述为: - 1: 阴极(Cathode) - 2: 阳极(Anode)

4. 参数特性: - 绝对最大额定值(Ta=25°C): - 1N5817WB反向电压为20V,1N5818WB为30V,1N5819WB为40V。 - 平均正向整流电流为1A。 - 非重复峰值正向浪涌电流(8.3ms单半正弦波)为25A。 - 总功耗为450mW。 - 工作温度范围为-55至+150°C。 - 存储温度范围为-55至+150°C。 - 特征值在Ta=25°C时: - 1N5817WB和1N5818WB的反向击穿电压在1mA时为20V和30V,1N5819WB为40V。 - 反向电压漏电流在20V、30V和40V下分别为1mA。 - 正向电压在不同电流下有不同值,例如1N5819WB在0.1A时为0.45V,在1A时为0.6V,在3A时为0.9V。

5. 功能详解: - 这些二极管是用于整流应用的肖特基二极管,具有低正向电压降和高浪涌电流能力。

6. 应用信息: - 适用于需要高效率整流的应用场合,如电源、变频器和开关电源。

7. 封装信息: - 封装为塑料表面贴装封装,2引脚SOD-123。
1N5818WB 价格&库存

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