1N6263WS

1N6263WS SILICON SCHOTTKY BARRIER DIODE for general purpose applications PINNING PIN 1 2 1 DESCRIPTION Cathode Anode 2 S2 Top View Marking Code: "S2" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage Max. Single Cycle Surge Forward Current (10 s Square wave) Power Dissipation Junction Temperature Storage Temperature Range 1) Symbol VRRM IFSM Ptot Tj TS Value 40 2 400 1) Unit V A mW O 200 - 55 to + 200 C C O Valid provided the leads direct at the case are kept at ambient temperature. Characteristics at Ta = 25 OC Parameter Reverse Breakdown Voltage at IR = 10 μA Forward Voltage at IF = 1 mA at IF = 15 mA Leakage Current at VR = 30 V Junction Capacitance at VR = 0 V, f = 1 MHz Reverse Recovery Time at IF = IR = 5 mA , Recover to 0.1 IR Symbol V(BR)R VF IR Ctot trr Min. 40 - Max. 0.39 0.9 200 2.2 1 Unit V V nA pF ns SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 01/09/2006 1N6263WS SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 01/09/2006 1N6263WS PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323 A c HE D A E bp UNIT mm A 1.10 0.80 bp 0.40 0.25 C 0.15 0.00 D 1.80 1.60 E 1.35 1.15 HE 2.80 2.30 SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 01/09/2006