1N728WS

1N728WS SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE For super-high speed switching and wave detection circuit applications PINNING PIN 1 2 1 DESCRIPTION Cathode Anode 2 PP Top View Marking Code: "PP" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage Reverse Voltage Forward Current Peak Forward Current Junction Temperature Storage Temperature Range Symbol VRM VR IF IFM Tj Ts Value 30 30 30 150 125 - 55 to + 125 Unit V V mA mA O C C O Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 1 mA at IF = 30 mA Reverse Current at VR = 30 V Terminal Capacitance at VR = 1 V, f = 1 MHz Reverse Recovery Time at IF = IR = 10 mA, Irr = 1 mA, RL = 100 Ω Detection Efficiency at Vin = 3 V(peak), f = 30 MHz, RL = 3.9 KΩ, CL = 10 pF Symbol VF Typ. 1.5 1 65 Max. 0.4 1 0.3 Unit V IR CT trr η µA pF ns % SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 01/09/2006 1N728WS SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 01/09/2006 1N728WS PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323 A c HE D A E bp UNIT mm A 1.10 0.80 bp 0.40 0.25 C 0.15 0.00 D 1.80 1.60 E 1.35 1.15 HE 2.80 2.30 SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 01/09/2006