1SS106

1SS106 SILICON SCHOTTKY BARRIER DIODE for various detector, high speed switching Max. 0.5 Features • Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal. Max. 1.9 Min. 27.5 Black Cathode Band Black Part No. Black "ST" Brand XXX ST Max. 3.9 Min. 27.5 Glass Case DO-35 Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Average Forward Current Junction Temperature Storage Temperature Range Symbol VR IO TJ Tstg Value 10 30 125 - 55 to + 125 Unit V mA O C C O Electrical Characteristics at Ta = 25 OC Parameter Forward Current at VF = 1 V Reverse Current at VR = 6 V Capacitance at VR = 1 V, f = 1 MHz Rectifier Efficiency at Vin = 2 Vrms, f = 40 MHz, RL = 5 KΩ, CL = 20 pF ESD Capability 1) at C = 200 pF, both forward and reverse direction 1 pulse. 1) Symbol IF IR C η - Min. 4.5 70 100 Max. 70 1.5 - Unit mA µA pF % V Failure criterion: IR ≥ 140 µA at VR = 6 V SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/06/2007