1SS176

1SS176 SILICON EPITAXIAL PLANAR DIODE Switching diode Max. 0.45 Max. 1.9 Min. 27.5 Black Cathode Band Black Part No. XXX Max. 2.9 Min. 27.5 Glass Case DO-34 Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Peak Reverse Voltage Average Rectified Output Current Forward Voltage Surge Forward Current at t = 1s Junction Temperature Storage Temperature Range Symbol VR VRM IO IF IFSM Tj TS Value 30 35 100 300 1 175 - 65 to + 175 Unit V V mA mA A O C C O Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100 mA Reverse Current at VR = 30 V Capacitance at VR = 0 V, f = 1 MHz Reverse Recovery Time from IF = 100 mA, VR = 6 V, RL = 100 Ω Symbol VF IR Ctot trr Max. 1.2 0.5 3 4 Unit V µA pF ns SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 23/06/2007