1SS184
SILICON EPITAXIAL PLANAR DIODE
Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance
1
3
2
Applications • Ultra high speed switching application
Marking Code: A4 SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Maximum Peak Reverse Voltage Reverse Voltage Average Forward Current Maximum Peak Forward Current Surge Current (10 ms) Power Dissipation Junction Temperature Storage Temperature Range
Symbol VRM VR IO IFM IFSM Ptot Tj Ts
Value 85 80 100 300 2 150 150 - 55 to + 150
Unit V V mA mA A mW
O
C C
O
Characteristics at Ta = 25 OC
Parameter Forward Voltage at IF = 100 mA Reverse Current at VR = 30 V at VR = 80 V Total Capacitance at VR = 0 , f = 1 MHz Reverse Recovery Time at IF = 10 mA Symbol VF IR CT trr Max. 1.2 0.1 0.5 3 4 Unit V µA
pF ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 10/10/2008
1SS184
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 10/10/2008
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