1SS244

1SS244 SILICON EPITAXIAL PLANAR DIODE High voltage switching Max. 0.45 Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. XXX Max. 2.9 Min. 27.5 Glass Case DO-34 Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage Reverse Voltage Mean Rectifying Current Peak Forward Current Surge Current (1 s) Power Dissipation Junction Temperature Storage Temperature Range Symbol VRM VR IO IFM Isurge Ptot Tj TS Value 250 220 200 625 1 300 175 - 65 to + 175 Unit V V mA mA A mW O C C O Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 200 mA Reverse Current at VR = 220 V Capacitance between Terminals at f = 1 MHz Reverse Recovery Time at IR = 20 mA, IF = 20 mA, RL = 50 Ω Symbol VF IR CT trr Max. 1.5 10 3 75 Unit V µA pF ns SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 23/06/2007 1SS244 SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 23/06/2007