1SS321
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
For low voltage high speed switching application
3
Features • Low forward voltage • Low reverse current
1
2
Marking Code: "ZC" SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Maximum Peak Reverse Voltage Reverse Voltage Average Forward Current Maximum Peak Forward Current Non-Repetitive Peak Forward Surge Current ( t = 10 ms) Power Dissipation Junction Temperature Storage Temperature Range
Symbol VRM VR IO IFM IFSM Pd Tj Tstg
Value 12 10 50 150 1 150 125 - 55 to + 125
Unit V V mA mA A
mW
O
C C
O
Characteristics at Ta = 25 OC
Parameter Forward Voltage at IF = 50 mA Reverse Current at VR = 10 V Reverse Breakdown Voltage at IR = 10 µA Total Capacitance at VR = 0 , f = 1 MHz Symbol VF IR V(BR)R CT Min. 12 Max. 1 500 4.5 Unit V nA V pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 04/12/2007
1SS321
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 04/12/2007
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