1SS368

1SS368 SILICON EPITAXIAL PLANAR DIODE Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance PINNING PIN 1 2 1 DESCRIPTION Cathode Anode 2 W2 Applications • Ultra high speed switching Top View Marking Code: "W2" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Maximum (Peak) Reverse Voltage Reverse Voltage Average Forward Current Maximum (Peak) Forward Current Surge Current (10 ms) Power Dissipation Junction Temperature Storage Temperature Range 1) Symbol VRM VR IO IFM IFSM Ptot Tj Tstg Value 85 80 100 200 1 150 1) Unit V V mA mA A mW O 125 - 55 to + 125 C C O Mounted on a glass epoxy circuit board of 20 X 20 mm, pad dimension of 4 X 4 mm Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100 mA Reverse Current at VR = 30 V at VR = 80 V Total Capacitance at f = 1 MHz Reverse Recovery Time at IF = IR = 10 mA, Irr = 0.1 X IR , RL = 100 Ω Symbol VF IR CT trr Max. 1.2 0.1 0.5 3 4 Unit V µA pF ns SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/04/2009 1SS368 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/04/2009 1SS368 PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323 A c HE D A E bp UNIT mm A 1.10 0.80 bp 0.40 0.25 C 0.15 0.00 D 1.80 1.60 E 1.35 1.15 HE 2.80 2.30 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/04/2009