1SS370W

1SS370W Silicon Epitaxial Planar Diode For high voltage and high speed switching applications 3 1 2 Marking Code: F5 Absolute Maximum Ratings (Ta = 25 OC) Parameter Maximum Peak Reverse Voltage Reverse Voltage Average Forward Current Maximum Peak Forward Current Surge Forward Current (10 ms) Power Dissipation Junction Temperature Storage Temperature Range Symbol VRM VR IF IFM IFSM PD Tj Tstg Value 250 200 100 300 2 100 125 - 55 to + 125 Unit V V mA mA A mW O C C O Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 10 mA at IF = 100 mA Reverse Current at VR = 50 V at VR = 200 V Total Capacitance at VR = 0, f = 1 MHz Reverse Recovery Time at IF = 10 mA Symbol VF VF IR IR CT trr Max. 1 1.2 0.1 1 3 60 Unit V µA pF ns SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 02/07/2006 1SS370W SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 02/07/2006