1SS390

ST 2SB772T PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications E C B Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current - DC Collector Current - Pulse Base Current - DC Total Power Dissipation @ TC = 25 OC Total Power Dissipation @ TA = 25 C O TO-126 Plastic Package Symbol -VCBO -VCEO -VEBO -IC Value 40 30 5 3 7 0.6 10 1.0 - 65 to + 150 Unit V V V A A A W W O 1) -IC -IB PD PD TJ, Ts Operating and Storage Junction Temperature Range 1) C PW=10ms, Duty Cycle ≤ 50% Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 2 V, -IC = 20 mA at -VCE = 2 V, -IC = 1 A Symbol hFE hFE hFE hFE hFE -V(BR)CEO -V(BR)CBO -V(BR)EBO -ICBO -IEBO -VCE(sat) -VBE(sat) CO fT Min. 30 60 100 160 200 30 40 5 Typ. 55 80 Max. 120 200 320 400 1 1 0.5 2 Unit V V V µA µA V V pF MHz R Q P E Collector Emitter Breakdown Voltage at -IC = 1 mA Collector Base Breakdown Voltage at -IC = 1 mA Emitter Base Breakdown Voltage at -IE = 1 mA Collector Cutoff Current at -VCB = 30 V Emitter Cutoff Current at -VEB = 3 V Collector Emitter Saturation Voltage at -IC = 2 A, -IB = 200 mA Base Emitter Saturation Voltage at -IC = 2 A, -IB = 200 mA Output Capacitance at -VCB = 10 V, f = 1 MHz Current Gain Bandwidth Product at -IC = 100 mA, -VCE = 5 V SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 25/05/2006