1SS392

1SS392 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE For low voltage high speed switching application 3 Features • Low forward voltage • Low reverse current 1 2 Marking Code: "ZD" SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Maximum Peak Reverse Voltage Reverse Voltage Average Forward Current Maximum Peak Forward Current Non-Repetitive Peak Forward Surge Current ( t = 10 ms) Power Dissipation Junction Temperature Storage Temperature Range Symbol VRM VR IO IFM IFSM Pd Tj Tstg Value 45 40 100 300 1 150 125 - 55 to + 125 Unit V V mA mA A mW O C C O Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100 mA Reverse Current at VR = 40 V Reverse Breakdown Voltage at IR = 10 µA Total Capacitance at VR = 0 , f = 1 MHz Symbol VF IR V(BR)R CT Min. 45 Max. 0.6 5 25 Unit V µA V pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 04/12/2007 1SS392 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 04/12/2007