BAS16

BAS16 SILICON EPITAXIAL PLANAR SWITCHING DIODE Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance Applications • Ultra high speed switching application 3 1 2 Marking Code: 5D SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Repetitive Peak Reverse Voltage Continuous Reverse Voltage Continuous Forward Current Repetitive Peak Forward Current Non-Repetitive Peak Forward Surge Current t = 1 µs t = 1 ms t=1s Symbol VRRM VR IF IFRM IFSM Ptot Tj Ts Value 85 75 215 500 4 1 0.5 250 150 - 65 to + 150 Unit V V mA mA A mW O Power Dissipation Junction Temperature Storage Temperature Range C C O Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 50 mA at IF = 150 mA Reverse Current at VR = 25 V at VR = 75 V at VR = 25 V, TJ = 150 OC at VR = 75 V, TJ = 150 OC Reverse Breakdown Voltage at IR = 100 µA Diode Capacitance at f = 1 MHz Reverse Recovery Time at IF = IR = 10 mA, RL = 50 Ω Symbol VF VF VF VF IR IR IR IR V(BR)R Cd trr Min. Max. 715 855 1 1.25 30 1 30 50 2 4 Unit mV mV V V nA µA µA µA V pF ns 75 - SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 10/10/2008 BAS16 SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 10/10/2008