BAS16WS

BAS16WS SILICON EPITAXIAL PLANAR SWITCHING DIODE Features • Fast switching diode PINNING PIN 1 2 1 DESCRIPTION Cathode Anode 2 W2 Top View Marking Code: "W2" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Peak Reverse Voltage Forward Current (Continuous) Non-Repetitive Peak Forward Current t = 1 µs t = 1 ms t=1s Symbol VR VRM IF IFSM Ptot Tj Tstg Value 75 100 250 2 1 0.5 200 150 - 65 to + 150 Unit V V mA A A A mW O Power Dissipation Junction Temperature Storage Temperature Range C C O Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 50 mA at IF = 150 mA Reverse Leakage Current at VR = 75 V at VR = 25 V, TJ = 150 OC at VR = 75 V, TJ = 150 OC Diode Capacitance at VR = 0 V, f = 1 MHz Reverse Recovery Time at IF = 10 mA to IR = 10 mA, IR = 1 mA, RL = 100 Ω Symbol Max. 0.715 0.855 1 1.25 1 30 50 2 6 Unit VF V IR µA Ctot trr pF ns SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/04/2009 BAS16WS SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/04/2009 BAS16WS PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323 A c HE D A E bp UNIT mm A 1.10 0.80 bp 0.40 0.25 C 0.15 0.00 D 1.80 1.60 E 1.35 1.15 HE 2.80 2.30 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/04/2009