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BAS32L

BAS32L

  • 厂商:

    SEMTECH_ELEC

  • 封装:

  • 描述:

    BAS32L - HIGH SPEED DIODE - SEMTECH ELECTRONICS LTD.

  • 数据手册
  • 价格&库存
BAS32L 数据手册
BAS32L HIGH SPEED DIODE FEATURES • • • • • Small hermetically-sealed glass SMD package High switching speed Continuous reverse voltage Repetitive peak reverse voltage Repetitive peak forward current APPLICATION • • High-Speed Switching Fast Logic Applications Absolute Maximum Ratings (Ta = 25oC) Parameter Repetitive peak reverse voltage Continuous reverse voltage Continuous forward current (note1) Repetitive peak forward current Non-repetitive peak forward current Square wave, Tj = 25 ℃ prior to surge t=1μs t=1ms t=1s Symbol VRRM VR IF IFRM Limits 75 75 200 450 4 1 0.5 500 200 -65 to +200 300 350 Unit V V mA mA IFSM Ptot Tj TS Rthjtp Rthja A Power dissipation Junction temperature Storage temperature range Thermal resistance from junction to tie point Thermal resistance from junction to ambient Note 1: Device mounted on an FR4printed- circuit board. mW O O C C K/W K/W SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 16/01/2003 BAS32L Electrical Characteristics (Ta = 25oC) Parameter Forward voltage at IF = 5mA at IF = 100mA at IF = 100mA, Tj = 100℃ Reverse current at VR = 20V at VR = 75V at VR = 20V, Tj = 150℃ at VR = 75V, Tj = 150℃ Reverse breakdown voltage at IR = 100μA Diode capacitance f = 1MHz Reverse recovery time at IF = 10mA, IR = 10mA, RL = 100Ω measured at IR = 1mA Forward recovery voltage IF = 50mA, tr = 20ns Symbol VF VF VF IR IR IR IR V(BR)R Cd trr Vfr Min. 620 100 Typ. Max. 750 1000 930 25 5 50 100 2 4 2.5 Unit mV mV mV nA μA μA μA V pF ns V SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 16/01/2003 BAS32L Maximum permissible continuous forward current as a function of ambient temperature forward current as a function of forward voltage 300 IF (mA) 600 IF (mA) 200 400 (1) (2) (3) 100 200 0 0 100 AMBIENT TEMPERATURE Ta ( C ) 0 200 0 1 VF ( V ) 2 (1) Tj=175 C ; typical values (2) Tj=25 C ; typical values (3) Tj=25 C ; maximum values Maximum permissible non-repetitive peak forward current as a function of pulse duration 10 I FSM (A) 2 10 1 10 -1 1 Based on square wave current Tj = 25 C prior to surge 10 10 2 10 3 10 4 tp ( s) SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 16/01/2003 BAS32L REVERSE CURRENT AS A FUNCTION OF JUNCTION TEMPERATURE Diode capacitance as a function of revese voltage ; typical values 1.2 1.0 IR ( A) (1) (2) (3) Cd (pF) 0.8 0.6 0.4 0 10 VR ( V ) f=1MHz; Tj=25 C (1) VR=75V; maximum values (2) VR=75V; typical values (3) VR=20V; typical values 20 Tj ( C) SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 16/01/2003
BAS32L 价格&库存

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BAS32L,115
  •  国内价格
  • 50+0.07749
  • 150+0.0661
  • 1000+0.0547
  • 5000+0.05014

库存:0