BAS81

BAS81 SILICON SCHOTTKY BARRIER DIODES for general purpose applications Absolute Maximum Ratings (Ta = 25oC) Symbol Peak Reverse Voltage Continuous Forward Current Repetitive Peak Forward Current tp≦1s; δ≦0.5 Repetitive Peak Forward Current tp=1s Junction Temperature Storage Temperature Range VRRM IF IFRM IFSM Tj TS Value 40 30 150 500 125 -65 to +150 Unit V mA mA mA O O C C Symbol Thermal Resistance from Junction to Ambient Rthj-a Value 320 Unit K/W SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 09/12/2004 BAS81 Characteristics at Tamb = 25oC Symbol Forward Voltage at IF = 0.1mA at IF = 1mA at IF = 15mA Leakage Current at VR = VRMAX Junction Capacitance at VR = 2V, f = 1MHz Ctot 1.6 pF IR 200 nA VF VF VF Min. Typ. Max. 0.33 0.41 1 Unit V V V SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 09/12/2004 BAS81 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 09/12/2004