BAS86

BAS86 SCHOTTKY BARRIER DIODE Ultra High-Speed Switching, Voltage Clamping Protection Circuits and Blocking Applications Features • • • • Low forward voltage. Guard ring protected. Hermetically-sealed leaded glass package. High breakdown voltage. LL34 Absolute Maximum Ratings (Ta = 25oC) Parameter Continuous reverse voltage Continuous forward current Average forward current Repetitive peak forward current tp≦1sec.; δ≦0.5 Non-repetitive peak forward current tp=10ms Operating ambient temperature Junction temperature Storage temperature range Thermal resistance from junction to ambient Symbol VR IF IF(AV) IFRM IFSM Tamb Tj TS Rthj-a Limits 50 200 200 500 5 -65 to +125 125 -65 to +150 320 Unit V mA mA mA A ℃ ℃ ℃ K/W Characteristics at Ta = 25oC Parameter Forward voltage at IF = 0.1mA at IF = 1mA at IF = 10mA at IF = 30mA at IF = 100mA Reverse current at VR = 40V Symbol VF VF VF VF VF (Note 1) IR trr Cd 5 4 8 μA ns pF Min. Typ. Max. 300 380 450 600 900 Unit mV mV mV mV mV Reverse recovery time at IF = 10mA, IR = 10mA, RL = 100Ω Diode capacitance at VR = 1V, f = 1MHz Note 1: Pulsed test: tp=300μs; δ=0.02. SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 12/03/2005 BAS86 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 12/03/2005 BAS86 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 12/03/2005