BAV102

BAV101~BAV103 SILICON EPITAXIAL PLANAR DIODES High Voltage General Purpose Diodes Absolute Maximum Ratings (Ta = 25 OC) Parameter Repetitive Peak Reverse Voltage BAV101 BAV102 BAV103 BAV101 BAV102 BAV103 Symbol VRRM Value 120 200 250 100 150 200 250 625 3 1 400 300 175 - 65 to + 175 Unit V Reverse Voltage VR IF IFRM V mA mA A mW K/W O Continuous Forward Current Repetitive Peak Forward Current Non-repetitive Peak Forward Surge Current Total Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Range at t = 100 µs at t = 1 s IFSM Ptot RθJA Tj Tstg C C O Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100 mA at IF = 200 mA Reverse Current at VR = 100 V at VR = 150 V at VR = 200 V at VR = 100 V, Tj = 150 OC at VR = 150 V, Tj = 150 OC at VR = 200 V, Tj = 150 OC Diode Capacitance at f = 1 MHz, VR = 0 Reverse Recovery Time at IF = IR = 30 mA, Irr = 3 mA, RL = 100 Ω BAV101 BAV102 BAV103 BAV101 BAV102 BAV103 Symbol VF Max. 1 1.25 100 100 100 100 100 100 5 50 Unit V IR nA nA nA µA µA µA pF ns Cd trr SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 22/11/2008 BAV101~BAV103 SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 22/11/2008