BAV199W

BAV199W LOW LEAKAGE DOUBLE DIODE For low leakage current applications 3 Feature • Very low leakage current • Medium speed switching times 1 2 Marking Code: JY Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Repetitive Reverse Voltage Continuous Reverse Voltage Continuous Forward Current Repetitive Peak Forward Current Non-Repetitive Peak Forward Surge Current at t = 1 µs at t = 1 ms at t = 1 s Single Diode Double Diode Symbol VRRM VR IF IFRM IFSM Pd RθJA Tj, Tstg Value 85 85 160 140 500 4 1 0.5 250 625 - 65 to + 150 Unit V V mA mA A mW O Power Dissipation Thermal Resistance Junction to Ambient Air Operating and Storage Temperature Range C/W O C Characteristics at Ta = 25 OC Parameter Reverse Breakdown Voltage at IR = 100 µA Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 50 mA at IF = 150 mA Reverse Current at VR = 75 V at VR = 75 V, Tj = 150 OC Total Capacitance at VR = 0, f = 1 MHz Reverse Recovery Time at IF = IR = 10 mA, Irr = 0.1 X IR, RL = 100 Ω Symbol V(BR)R Min. 85 - Max. 0.9 1 1.1 1.25 5 80 2 3 Unit V VF V IR IR CT trr nA pF µs SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 25/09/2008 BAV199W SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 25/09/2008