BAV20

BAV19, BAV20, BAV21 SILICON EPITAXIAL PLANAR DIODES High Voltage General Purpose Diodes Max. 0.5 Max. 1.9 Min. 27.5 Black Cathode Band Black Part No. Black "ST" Brand XXX ST Max. 3.9 Min. 27.5 Glass Case DO-35 Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Repetitive Peak Reverse Voltage BAV19 BAV20 BAV21 BAV19 BAV20 BAV21 Symbol VRRM Value 120 200 250 100 150 200 250 625 9 3 1 500 375 240 175 - 65 to + 175 Unit V Reverse Voltage Continuous Forward Current Repetitive Peak Forward Current Non-repetitive Peak Forward Surge Current Total Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Tie-point Junction Temperature Storage Temperature Range 1) 1) 1) VR IF IFRM V mA mA A mW K/W K/W O at t = 1 µs at t = 100 µs at t = 1 s IFSM Ptot RθJA RθJTP Tj TS C C O Lead length 10 mm SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/06/2007 BAV19, BAV20, BAV21 Characteristics at Ta = 25 OC Parameter Reverse Breakdown Voltage at IR = 100 µA BAV19 BAV20 BAV21 BAV19 BAV20 BAV21 BAV19 BAV20 BAV21 Symbol Min. 120 200 250 Max. 100 100 100 100 100 100 1 1.25 5 50 Unit V(BR)R V Reverse Current at VR = 100V at VR = 150V at VR = 200V at VR = 100 V, TA = 150 OC at VR = 150 V, TA = 150 OC at VR = 200 V, TA = 150 OC Forward Voltage at IF = 100 mA at IF = 200 mA Diode Capacitance at f = 1 MHz Reverse Recovery Time at IF = IR = 30 mA, Irr = 3 mA, RL = 100 Ω IR nA nA nA µA µA µA V VF Cd trr pF ns SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/06/2007 BAV19, BAV20, BAV21 Rverse voltage vs. reverse current 325 Ta=25 C Reverse current vs. reverse voltage 50 Reverse current, nA Ta=25 C Reverse voltage, V 40 30 20 10 0 300 275 3 5 10 20 30 A 50 100 Reverse current, 55 75 95 115 135 155 175 195 Reverse voltage, V Forward voltage vs. forward current Ta=25 C Reverse current vs. reverse voltage 100 Reverse current, nA Forward voltage, mV 90 Ta=25 C 80 70 60 50 40 30 20 450 400 350 300 250 180 200 220 240 255 1 2 5 10 20 A 50 100 Forward current, Reverse voltage, V Forward voltage vs. forward current 725 700 Forward voltage, mV Forward voltage vs. forward current 1.4 Ta=25 C 650 600 550 500 450 0.1 Forward voltage, mV 1.3 1.2 1.1 Ta=25 C 0.9 0.8 0.2 0.5 1 2 5 10 0.7 10 Forward voltage, V 1 20 50 100 200 500 800 Forward current, mA Forward current, mA SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/06/2007 BAV19, BAV20, BAV21 Forward voltage vs. ambient temperature 1.3 Forward voltage, mV Capacitance vs. reverse voltage Ta=25 C 800 Ta= -40 C 600 Ta=25 C Capacitance, pF 1.2 1.1 1 0.9 400 200 Ta=80 C 0.8 0.001 0.003 0.01 0.03 0.1 0.3 1 3 10 0 2 4 6 8 10 12 14 15 Forward current, mA Reverse recovery time vs. reverse recovery current 50 Reverse recovery, nS Reverse voltage, V Average rectified current & forward current vs. ambiebnt temperature 500 400 Current, mA Fo rw ar dc 40 ur re 300 200 100 0 nt s te a dy sta te, 30 IF=IR=30mA Rloop=100 Ohms Aver ag mA e rec tified 20 1 1.5 2 2.5 3 curr ent, mA 100 150 50 Reverse recovery current, mA Ambient temperature ( C) Power derating curve 500 Power dissipation, mW 400 DO-35 Pkg 300 200 SOT-23 Pkg 100 0 50 100 150 200 Average temperature ( C) SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/06/2007