BAV70

BAV70 SILICON EPITAXIAL PLANAR SWITCHING DIODE Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance 1 3 2 Marking Code: A4 SOT-23 Plastic Package Applications • Ultra high speed switching application Absolute Maximum Ratings (Ta = 25 OC) Parameter Maximum Peak Reverse Voltage Reverse Voltage Average Forward Current Maximum Peak Forward Current Non-Repetitive Peak Forward Surge Current Power Dissipation Junction Temperature Storage Temperature Range at t = 1 s at t = 1 µs Symbol VRM VR IO IFM IFSM Pd Tj Ts Value 100 75 200 300 1 2 350 150 - 55 to + 150 Unit V V mA mA A mW O C C O Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 50 mA at IF = 150 mA Reverse Current at VR = 20 V at VR = 75 V at VR = 25 V, TJ = 150 OC at VR = 75 V, TJ = 150 OC Reverse Breakdown Voltage at IR = 100 µA Total Capacitance at f = 1 MHz Reverse Recovery Time at IF = IR = 10 mA to Irr = 1 mA, RL = 50 Ω Symbol VF VF VF VF IR IR IR IR V(BR)R CT trr Min. Max. 715 855 1 1.25 25 2.5 30 50 2 4 Unit mV mV V V nA µA µA µA V pF ns 75 - SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 22/01/2008 BAV70 SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 22/01/2008