BC307

BC307…BC308 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications 1. Collector 2. Base 3. Emitter TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC Ptot Tj TS BC307 50 45 5 100 500 150 BC308 30 25 Unit V V V mA mW O C C - 55 to + 150 O Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 5 V, -IC = 2 mA Current Gain Group A B C Symbol hFE hFE hFE -ICBO -V(BR)CEO -V(BR)EBO -VCE(sat) -VBE(on) fT Ccb Min. 120 180 380 45 25 5 0.55 100 Max. 220 460 800 15 15 0.3 0.6 0.7 6 Unit nA V V V V MHz pF Collector Base Cutoff Current at -VCB = 50 V at -VCB = 30 V Collector Emitter Breakdown Voltage at -IC = 2 mA Emitter Base Breakdown Voltage at -IE = 100 µA Collector Emitter Saturation Voltage at -IC = 10 mA, -IB = 0.5 mA at -IC = 100 mA, -IB = 5 mA Base Emitter On Voltage at -VCE = 5 V, -IC = 2 mA Current Gain Bandwidth Product at -VCE = 5 V, -IC = 10 mA, f = 100 MHz Collector Base Capacitance at -VCB = 10 V, f = 1 MHz BC307 BC308 BC307 BC308 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 27/12/2007 BC307…BC308 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 27/12/2007