BC338

BC337…BC338 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications These types are subdivided into three groups -16, -25 and -40, according to their DC current gain. 1. Collector 2. Base 3. Emitter TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC ICM Ptot Tj TS BC337 50 45 5 800 1 625 150 BC338 30 25 Unit V V V mA A mW O C C - 55 to + 150 O Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 1 V, IC = 100 mA at VCE = 1 V, IC = 300 mA Current Gain Group -16 -25 -40 -16 -25 -40 Symbol hFE hFE hFE hFE hFE hFE ICBO V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(on) fT CCBO Min. 100 160 250 60 100 170 50 30 45 25 5 Typ. 100 12 Max. 250 400 630 100 100 0.7 1.2 Unit nA V V V V V MHz pF Collector Base Cutoff Current at VCB = 50 V at VCB = 30 V Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 2 mA Emitter Base Breakdown Voltage at IE = 100 µA Collector Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA Base Emitter On Voltage at VCE = 1 V, IC = 300 mA Gain Bandwidth Product at VCE = 5 V, IC = 10 mA, f = 50 MHz Collector Base Capacitance at VCB = 10 V, f = 1 MHz BC337 BC338 BC337 BC338 BC337 BC338 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 27/12/2007 BC337…BC338 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 27/12/2007