BC516

BC516 PNP Silicon Darlington Transistor Collector Base Emitter 1. Collector 2. Base 3. Emitter TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) Peak Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC -ICM Ptot Tj TS Value 40 30 10 500 800 500 150 - 55 to + 150 Unit V V V mA mA mW O C C O Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 2 V, -IC = 20 mA Collector Base Cutoff Current at -VCB = 30 V Emitter Base Cutoff Current at -VEB = 10 V Collector Base Breakdown Voltage at -IC = 100 µA Collector Emitter Breakdown Voltage at -IC = 1 mA Emitter Base Breakdown Voltage at -IE = 10 µA Collector Emitter Saturation Voltage at -IC = 100 mA, -IB = 0.1 mA Base Emitter Saturation Voltage at -IC = 100 mA, -IB = 0.1 mA Base Emitter On Voltage at -VCE = 5 V, -IC = 10 mA Transition Frequency at -VCE = 5 V, -IC = 10 mA Symbol hFE -ICBO -IEBO -V(BR)CBO -V(BR)CEO -V(BR)EBO -VCE(sat) -VBE(sat) -VBE(on) fT Min. 30000 40 30 10 125 Max. 100 100 1 1.5 1.4 Unit nA nA V V V V V V MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/01/2008