BC517

BC517 NPN Silicon Darlington Transistor Collector Base Emitter TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Characteristics (Ta = 25 OC) Parameter DC Current Gain at VCE = 2 V, IC = 20 mA Collector Saturation Voltage at IC = 100 mA, IB = 0.1 mA Base Emitter On Voltage at VCE = 5 V, IC = 10 mA Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 2 mA Emitter Base Breakdown Voltage at IE = 100 µA Collector Cutoff Current at VCE = 30 V Collector Cutoff Current at VCB = 30 V Emitter Cutoff Current at VEB = 10 V Current-Gain-Bandwidth Product at VCE = 5 V, IC = 10 mA, f = 100 MHz Symbol hFE VCEsat VBE(on) V(BR)CBO V(BR)CES V(BR)EBO ICES ICBO IEBO fT Min. 30,000 40 30 10 Typ. 200 Max. 1 1.4 500 100 100 Unit V V V V V nA nA nA MHz Symbol VCBO VCES VEBO IC Ptot Tj TS Value 40 30 10 500 625 150 - 55 to + 150 Unit V V V mA mW O C C O SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated :15/06/2006