BC549

BC546…BC550 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier application These transistors are subdivided into three groups A, B and C according to their current gain. 1. Collector 2. Base 3. Emitter TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage BC546 BC547, BC550 BC548, BC549 BC546 BC547, BC550 BC548, BC549 Symbol VCBO Value 80 50 30 65 45 30 6 100 200 500 150 - 65 to + 150 Unit V Collector Emitter Voltage VCEO VEBO IC ICM Ptot Tj TS V V mA mA mW O Emitter Base Voltage Collector Current (DC) Peak Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range C C O Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 5 V, IC = 2 mA Current Gain Group A B C Symbol hFE hFE hFE ICBO IEBO BC546 BC547, BC550 BC548, BC549 BC546 BC547, BC550 BC548, BC549 V(BR)CBO Min. 110 200 420 80 50 30 65 45 30 6 Max. 220 450 800 15 100 Unit nA nA V Collector Base Cutoff Current at VCB = 30 V Emitter Base Cutoff Current at VEB = 5 V Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 10 µA V(BR)CEO V(BR)EBO V V SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 27/12/2007 BC546…BC550 Characteristics at Ta = 25 OC Parameter Collector Emitter Saturation Voltage at IC = 10 mA, IB = 0.5 mA at IC = 100 mA, IB = 5 mA Base Emitter On Voltage at VCE = 5 V, IC = 2 mA at VCE = 5 V, IC = 10 mA Transition Frequency at VCE = 5 V, IC = 10 mA, f = 100 MHz Collector Base Capacitance at VCB = 10 V, f = 1 MHz Symbol VCE(sat) Min. 0.55 100 Max. 0.25 0.6 0.7 0.77 6 Unit V VBE(on) fT Ccb V MHz pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 27/12/2007