BC558

BC556…BC560 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications These transistors are subdivided into three groups A, B and C according to their current gain. Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage BC556 BC557, BC560 BC558, BC559 BC556 BC557, BC560 BC558, BC559 1. Collector 2. Base 3. Emitter TO-92 Plastic Package Symbol -VCBO Value 80 50 30 65 45 30 5 100 200 500 150 - 65 to + 150 Unit V Collector Emitter Voltage -VCEO -VEBO -IC -ICM Ptot Tj TS V V mA mA mW O Emitter Base Voltage Collector Current (DC) Peak Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range C C O Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 5 V, -IC = 2 mA Current Gain Group A B C Symbol hFE hFE hFE -ICBO -IEBO BC556 BC557, BC560 BC558, BC559 BC556 BC557, BC560 BC558, BC559 -V(BR)CBO Min. 110 200 420 80 50 30 65 45 30 5 Max. 220 450 800 15 100 Unit nA nA V Collector Base Cutoff Current at -VCB = 30 V Emitter Base Cutoff Current at -VEB = 5 V Collector Base Breakdown Voltage at -IC = 100 µA Collector Emitter Breakdown Voltage at -IC = 2 mA Emitter Base Breakdown Voltage at -IE = 100 µA -V(BR)CEO -V(BR)EBO V V SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 27/12/2007 BC556…BC560 Characteristics at Ta = 25 OC Parameter Collector Emitter Saturation Voltage at -IC = 10 mA, -IB = 0.5 mA at -IC = 100 mA, -IB = 5 mA Base Emitter On Voltage at -VCE = 5 V, -IC = 2 mA at -VCE = 5 V, -IC = 10 mA Transition Frequency at -VCE = 5 V, -IC = 10 mA, f = 100 MHz Collector Base Capacitance at -VCB = 10 V, f = 1 MHz Symbol -VCE(sat) Min. 0.55 100 Max. 0.3 0.65 0.75 0.82 6 Unit V -VBE(on) fT Ccb V MHz pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 27/12/2007