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BC635

BC635

  • 厂商:

    SEMTECH_ELEC

  • 封装:

  • 描述:

    BC635 - NPN Silicon Epitaxial Planar Transistor - SEMTECH ELECTRONICS LTD.

  • 详情介绍
  • 数据手册
  • 价格&库存
BC635 数据手册
ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Medium Power Transistors for driver stages of audio / video amplifiers 1.Emitter 2.Collector 3.Base TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage BC635 BC637 BC639 BC635 BC637 BC639 Symbol VCBO Value 45 60 100 45 60 80 5 1 1.5 100 200 830 150 - 55 to + 150 Unit V Collector Emitter Voltage VCEO VEBO IC ICM IB IBM Ptot Tj TS V V A A mA mA mW O Emitter Base Voltage Collector Current Peak Collector Current Base Current Peak Base Current Power Dissipation Junction Temperature Storage Temperature Range C C O SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 15/03/2007 ST BC635 / BC637 / BC639 Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 2 V, IC = 5 mA at VCE = 2 V, IC = 150 mA at VCE = 2 V, IC = 500 mA Collector Cutoff Current at VCB = 30 V Emitter Cutoff Current at VEB = 5 V Collector Base Breakdown Voltage at IC = 100 µA Symbol hFE hFE hFE hFE ICBO IEBO BC635 BC637 BC639 BC635 BC637 BC639 Min. 40 40 40 25 45 60 100 45 60 80 5 100 Max. 250 160 100 100 0.5 1 Unit nA nA BC635 BC637 / BC639 V(BR)CBO V Collector Emitter Breakdown Voltage at IC = 10 mA V(BR)CEO V Emitter Base Breakdown Voltage at IE = 10 µA Collector Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA Base Emitter Voltage at VCE = 2 V, IC = 500 mA Gain Bandwidth Product at VCE = 5 V, IC = 50 mA, f = 100 MHz V(BR)EBO VCE(sat) VBE fT V V V MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 15/03/2007 ST BC635 / BC637 / BC639 Static Characteristics 1.8m A DC Current Gain c (mA) 1.6m A 1.4m A 1.2m A 1.0m A 0.8m A 0.6m A 0.4m A Collector Current I I B =0.2 m A C ollector Em itter V oltage V C E ( V ) DC Current Gain hFE Collector Current IC (mA) Base Emitter Saturation Voltage Collector Emitter Saturation Voltage Base Emitter On Voltage Saturation Voltage V CE(sat), V BE(sat) (V) Collector Current Ic (mA) Base Emitter Voltage VBE (V) C o l l e c t o r C u r r e n t IC ( m A ) Collector Output Capacitance Capacitance Cob (pF) Collector Base Voltage VCB (V) SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 15/03/2007
BC635
物料型号: - ST BC635/BC637/BC639

器件简介: - 这些是NPN型硅外延平面晶体管,主要用于音频/视频放大器驱动级。

引脚分配: - 1. 发射极(Emitter) - 2. 集电极(Collector) - 3. 基极(Base) - 封装类型为TO-92塑料封装,重量约为0.19克。

参数特性: - 绝对最大额定值: - 集电极-基极电压(VCBO):BC635/BC637为45/60V,BC639为100V - 集电极-发射极电压(VCEO):BC635为45V,BC637为60V,BC639为80V - 发射极-基极电压(VEBO):5V - 集电极电流(Ic):1A - 峰值集电极电流(ICM):1.5A - 基极电流(IB):100mA - 峰值基极电流(IBM):200mA - 总功耗(Ptot):830mW - 结温(Tj):150℃ - 存储温度范围(Ts):-55至+150℃

功能详解: - 在25°C下的特性: - hFE(电流增益):BC637/BC639在VCe=2V,Ic=500mA时为40至160 - 集电极截止电流:25至100nA - 集基极击穿电压(V(BR)CBO):BC635在Ic=100μA时为45V,BC637/BC639为60/100V - 集电极发射极击穿电压(V(BR)CEO):BC637为60V,BC639为80V - 发射极基极击穿电压(V(BR)EBO):5V - 集电极发射极饱和电压(VcE(sat)):在Ic=500mA,IB=50mA时小于0.5V - 基极发射极电压(VBE):在VcE=2V,Ic=500mA时小于1V - 增益带宽积(fT):在Vce=5V,Ic=50mA时为100MHz

应用信息: - 这些晶体管适用于音频/视频放大器的驱动级。

封装信息: - TO-92塑料封装,重量约为0.19克。
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