0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
BC639

BC639

  • 厂商:

    SEMTECH_ELEC

  • 封装:

  • 描述:

    BC639 - NPN Silicon Epitaxial Planar Transistor - SEMTECH ELECTRONICS LTD.

  • 数据手册
  • 价格&库存
BC639 数据手册
ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Medium Power Transistors for driver stages of audio / video amplifiers 1.Emitter 2.Collector 3.Base TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage BC635 BC637 BC639 BC635 BC637 BC639 Symbol VCBO Value 45 60 100 45 60 80 5 1 1.5 100 200 830 150 - 55 to + 150 Unit V Collector Emitter Voltage VCEO VEBO IC ICM IB IBM Ptot Tj TS V V A A mA mA mW O Emitter Base Voltage Collector Current Peak Collector Current Base Current Peak Base Current Power Dissipation Junction Temperature Storage Temperature Range C C O SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 15/03/2007 ST BC635 / BC637 / BC639 Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 2 V, IC = 5 mA at VCE = 2 V, IC = 150 mA at VCE = 2 V, IC = 500 mA Collector Cutoff Current at VCB = 30 V Emitter Cutoff Current at VEB = 5 V Collector Base Breakdown Voltage at IC = 100 µA Symbol hFE hFE hFE hFE ICBO IEBO BC635 BC637 BC639 BC635 BC637 BC639 Min. 40 40 40 25 45 60 100 45 60 80 5 100 Max. 250 160 100 100 0.5 1 Unit nA nA BC635 BC637 / BC639 V(BR)CBO V Collector Emitter Breakdown Voltage at IC = 10 mA V(BR)CEO V Emitter Base Breakdown Voltage at IE = 10 µA Collector Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA Base Emitter Voltage at VCE = 2 V, IC = 500 mA Gain Bandwidth Product at VCE = 5 V, IC = 50 mA, f = 100 MHz V(BR)EBO VCE(sat) VBE fT V V V MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 15/03/2007 ST BC635 / BC637 / BC639 Static Characteristics 1.8m A DC Current Gain c (mA) 1.6m A 1.4m A 1.2m A 1.0m A 0.8m A 0.6m A 0.4m A Collector Current I I B =0.2 m A C ollector Em itter V oltage V C E ( V ) DC Current Gain hFE Collector Current IC (mA) Base Emitter Saturation Voltage Collector Emitter Saturation Voltage Base Emitter On Voltage Saturation Voltage V CE(sat), V BE(sat) (V) Collector Current Ic (mA) Base Emitter Voltage VBE (V) C o l l e c t o r C u r r e n t IC ( m A ) Collector Output Capacitance Capacitance Cob (pF) Collector Base Voltage VCB (V) SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 15/03/2007
BC639 价格&库存

很抱歉,暂时无法提供与“BC639”相匹配的价格&库存,您可以联系我们找货

免费人工找货