BC850

BC846 … BC850 NPN Silicon Epitaxial Transistor for switching and amplifier applications As complementary types the PNP transistors BC856...BC860 is recommended. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage BC846 BC847, BC850 BC848, BC849 BC846 BC847, BC850 BC848, BC849 BC846, BC847 BC848, BC849, BC850 Symbol VCBO VCBO VCBO VCEO VCEO VCEO VEBO VEBO IC ICM Ptot TJ TS Value 80 50 30 65 45 30 6 5 100 200 200 150 - 65 to + 150 Units V V V V V V V V mA mA mW O Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Power Dissipation Junction Temperature Storage Temperature Range C C O SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 21/06/2006 BC846 … BC850 Characteristics at Tamb = 25 OC Parameter DC Current Gain at VCE = 5 V, IC = 2 mA A B C Symbol hFE hFE hFE VCEsat VCEsat VBE(on) VBE(on) ICBO fT Cob Cib BC846, BC847, BC848 BC849, BC850 BC849 BC850 NF NF NF NF Min. 110 200 420 580 Typ. 300 9 Max. 220 450 800 250 600 700 720 15 6 10 4 4 3 Units mV mV mV mV nA MHz pF pF dB dB dB dB Collector Emitter Saturation Voltage at IC = 10 mA, IB = 0.5 mA at IC = 100 mA, IB = 5 mA Base Emitter On Voltage at IC = 2 mA, VCE = 5 V at IC = 10 mA, VCE = 5 V Collector Cutoff Current at VCB = 30 V Current Gain Bandwidth Product at VCE = 5 V, IC = 10 mA, f = 100 MHz Output Capacitance at VCB = 10 V, f = 1 MHz Input Capacitance at VEB = 0.5 V, f = 1 MHz Noise Figure at IC = 200 µA, VCE = 5 V, RG = 2 KΩ, f = 1 KHz at IC = 200 µA,VCE = 5 V, RG = 2 KΩ, f = 30 ~15 KHz SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 21/06/2006 BC846 … BC850 STATIC CHARACTERISTIC 100 I C(mA),COLLECTOR CURRENT I C(mA),COLLECTOR CURRENT BASE-EMITTER ON VOLTAGE 100 80 I B =400 A I B =350 A I B =300 A I B =250 A I B =200 A VCE=2V 10 60 40 I B =150 A I B =100 A 1 20 I B =50 A 0.1 0 0 4 8 12 16 20 VBE (V),BASE-EMITTER VOLTAGE VCE(V),COLLECTOR-EMITTER VOLTAGE 0.2 0.4 0.6 0.8 1.0 1.2 10000 VCE=5V h FE DC CURRENT GAIN fT(MHz), CURRENT GAIN-BANDWIDTH PRODUCT DC CURRENT GAIN CURRENT GAIN BANDWIDTH PRODUCT 1000 VCE=5V 1000 100 100 10 10 1 10 100 1000 I C(mA),COLLECTOR CURRENT 1 0.1 1 10 100 I C(mA),COLLECTOR CURRENT VBE(sat) ,VCE(sat),(V) SATURATION VOLTAGE BASE-EMITTER SATURATION VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE 10000 I C=10I B Cob(pF), CAPACITANCE COLLECTOR OUTPUT CAPACITANCE 100 f=1MHz 1000 VBE(sat) 10 100 1 VCE(sat) 10 1 10 100 1000 0.1 1 10 100 1000 VCB(V),COLLECTOR-BASE VOLTAGE I C(mA),COLLECTOR CURRENT SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 21/06/2006